CLARE CPC3703C N-channel depletion-mode vertical dmos fet Datasheet

CPC3703
N-Channel Depletion-Mode
Vertical DMOS FET
V(BR)DSX /
V(BR)DGX
RDS(on)
(max)
IDSS (min)
250V
4
360mA
Package
SOT-89
Features
•
•
•
•
High Breakdown Voltage: 250V
Low On-Resistance: 4 max. at 25ºC
Low VGS(off) Voltage: -1.6 to -3.9V
Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
• High Input Impedance
• Small Package Size: SOT-89
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance, for
use in high-power applications. The CPC3703 is a
highly reliable device that has been used extensively
in Clare’s Solid State Relays for industrial and
telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4 maximum, on-state
resistance at 25ºC.
Applications
•
•
•
•
•
•
Description
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3703C
CPC3703CTR
Package Pinout
D
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
G
D
S
D
G
(SOT-89)
S
Pb
DS-CPC3703-R04
RoHS
2002/95/EC
e3
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1
CPC3703
Absolute Maximum Ratings @ 25ºC (Unless Otherwise Noted)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Pulsed Drain Current
Total Package Dissipation 1
Junction Temperature
Operational Temperature, Ambient
Storage Temperature
1
Ratings
250
±15
600
1.1
125
-55 to +125
-55 to +125
Units
VP
VP
mA
W
ºC
ºC
ºC
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Mounted on 1"x1"x0.062" FR4 board.
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Symbol
V(BR)DSX
VGS(off)
dVGS(off) /dT
IGSS
Drain-to-Source Leakage Current
Conditions
VGS= -5V, ID=100µA
VDS= 5V, ID=1mA
VDS= 5V, ID=1A
VGS=±15V, VDS=0V
VGS= -5V, VDS=250V
VGS= -5V, VDS=200V, TA=125ºC
VGS= 0V, VDS=15V
ID(off)
Saturated Drain-to-Source Current
Static Drain-to-Source On-State Resistance
Change in RDS(on) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
IDSS
RDS(on)
dRDS(on) /dT
GFS
CISS
COSS
CRSS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
Source-Drain Diode Voltage Drop
Thermal Resistance (Junction to Ambient)
VSD
RJA
VGS= 0V, ID=200mA
ID= 100mA, VDS = 10V
VGS= -5V
VDS= 25V
Min
250
-1.6
360
225
-
f= 1MHz
VDD= 25V
ID= 150mA
-
VGS= 0V to -10V
Rgen= 50
VGS= -5V, ISD=150mA
-
-
Typ
327
51
27
Max
-3.9
4.5
100
1
1
4
1.1
350
65
35
23
8
17
70
35
20
25
80
0.6
90
1.8
-
Units
V
V
mV/ºC
nA
µA
mA
mA

%/ºC
m

Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Off Voltage
Change in VGS(off) with Temperature
Gate Body Leakage Current
pF
ns
V
ºC/W
VDD
Switching Waveform & Test Circuit
RL
0V
90%
PULSE
GENERATOR
INPUT
-10V
10%
Rgen
t on
t d(on)
VDS
OUTPUT
t off
tf
t d(off)
tr
D.U.T.
90%
90%
INPUT
OUTPUT
0V
2
10%
10%
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R04
CPC3703
PERFORMANCE DATA (@25ºC Unless Otherwise Noted)*
VGS=-1.0
ID (mA)
ID (mA)
VGS=-1.5
VGS=-2.0
350
8
300
7
250
6
200
1
2
3
VDS (V)
4
5
+125ºC
150
+25ºC
-55ºC
50
0
-3.5
6
VGS(off) Vs. Temperature
(VDS=10V, ID=1mA)
5
4
3
100
VGS=-2.5
0
RDS(on) (:)
1000
900
800
700
600
500
400
300
200
100
0
RDS(on) Vs. Temperature
(VGS=0V, ID=200mA)
Instantaneous Transfer Characteristics
(VDS=5V, TA=TJ)
Output Characteristics
2
1
-3.0
-2.5
VGS (V)
-2.0
-1.5
0
50
300
-55ºC
+25ºC
+125ºC
250
-2.5
GFS (m )
0.1
200
ID (A)
:
VGS(off) (V)
150
Transconductance vs. Drain Current
(VDS=10V, TA=TJ)
1
-3.0
100
Temperature (ºC)
Maximum Rated Safe Operating Area
-2.0
-50
0.01
150
100
-3.5
50
-50
0
50
100
150
0.1
Temperature (ºC)
10
VDS (V)
Power Dissipation
vs. Ambient Temperature
Capacitance vs. Drain-Source Voltage
(VGS=-5V)
1
100
0
1000
Capacitance (pF)
0.8
0.6
0.4
0.2
450
CISS
375
300
225
COSS
150
CRSS
75
0
0.0
0
20
40
60
80
100
Temperature (ºC)
120
140
0
10
20
VDS (V)
20
30
40
50
60
70
80
90 100
On-Resistance vs. Drain Current
(VGS=0V)
525
1.0
10
ID (mA)
600
1.2
Power Dissipation (W)
0
0.001
RDS(on) (:)
-4.0
30
40
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
ID (A)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R04
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3
CPC3703
Manufacturing Information
Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. Clare classified all
of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry
standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our products to
the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled
according to the limitations and information in that standard as well as to any limitations set forth in the information or
standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according
to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
Device
Moisture Sensitivity Level (MSL) Rating
CPC3703C
MSL 1
ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020
must be observed.
Device
Maximum Temperature x Time
CPC3703C
260ºC for 30 seconds
Board Wash
Clare recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable,
and the use of a short drying bake may be necessary. Chlorine-based or Fluorine-based solvents or fluxes should not
be used. Cleaning methods that employ ultrasonic energy should not be used.
Pb
4
RoHS
2002/95/EC
e3
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R04
CPC3703
Mechanical Dimensions
CPC3703C
1.626 / 1.829
(0.064 / 0.072)
1.397 / 1.600
(0.055 / 0.063)
R 0.254
(R 0.010)
PCB Land Pattern
1.90
(0.075)
3.937 / 4.242
(0.155 / 0.167)
2.286 / 2.591
(0.090 / 0.102)
45º
2.45
(0.096)
1.40
(0.055)
Pin 1
0.356 / 0.483
(0.014 / 0.019)
0.432 / 0.559
(0.017 / 0.022)
0.889 / 1.194
(0.035 / 0.047)
5.00
(0.197)
50º
1.90
(0.074)
0.356 / 0.432
(0.014 / 0.017)
0.60
(0.024)
TYP 3
4.394 / 4.597
(0.173 / 0.181)
1.422 / 1.575
(0.056 / 0.062)
2.921 / 3.073
(0.115 / 0.121)
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
CPC3703C Tape & Reel
177.8 Dia
(7.00 Dia)
5.50 ± 0.05
(0.217 ± 0.002)
Top Cover
Tape Thickness
0.102 Max
(0.004 Max)
2.00 ± 0.05
(0.079 ± 0.002)
4.00 ± 0.1
(0.157 ± 0.004)
W=12.00 ± 0.3
(0.472 ± 0.012)
B0=4.60 ± 0.1
(0.181 ± 0.004)
K0=1.80 ± 0.1
(0.071 ± 0.004)
Embossed
Carrier
1.75 ± 0.1
(0.069 ± 0.004)
A0=4.80 ± 0.1
(0.189 ± 0.004)
P=8.00 ± 0.1
(0.315 ± 0.004)
Embossment
Dimensions
mm
(inches)
For additional information please visit our website at: www.clare.com
Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications
and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’s Standard Terms and Conditions of
Sale, Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability,
fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental
damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice.
5
Specification: DS-CPC3703-R04
©Copyright 2012, Clare, Inc.
All rights reserved. Printed in USA.
4/4/2012
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