AP15P15GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
-140V
RDS(ON)
180mΩ
ID
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
G
-15A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-140
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-15
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-9.7
A
1
IDM
Pulsed Drain Current
-60
A
PD@TC=25℃
Total Power Dissipation
89.2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
Value
Units
1.4
℃/W
62.5
℃/W
1
200909141
AP15P15GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-140
-
-
V
VGS=-10V, ID=-12A
-
-
180
mΩ
VGS=0V, ID=-1mA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-12A
-
12
-
S
IDSS
Drain-Source Leakage Current
VDS=-120V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-12A
-
55
90
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-80V
-
8.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
16.6
-
nC
VDS=-50V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-12A
-
26
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
67
-
ns
tf
Fall Time
RD=4.2Ω
-
60
-
ns
Ciss
Input Capacitance
VGS=0V
-
2850 4560
pF
Coss
Output Capacitance
VDS=-25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6.6
10
Ω
Min.
Typ.
IS=-12A, VGS=0V
-
-
-1.3
V
IS=-12A, VGS=0V,
-
75
-
ns
dI/dt=-100A/µs
-
250
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP15P15GH-HF
40
50
T C = 25 C
-ID , Drain Current (A)
40
30
20
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
T C =150 o C
-ID , Drain Current (A)
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V G = - 4.0 V
o
30
20
10
10
0
0
0
4
8
12
16
20
24
0
-V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
160
I D = -8 A
T C =25 ℃
I D = - 12 A
V G = -10V
Normalized RDS(ON)
RDS(ON) (mΩ )
2.0
150
1.6
1.2
140
0.8
0.4
130
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
12
10
Normalized -VGS(th) (V)
1.5
-IS(A)
8
T j =150 o C
6
T j =25 o C
4
1.0
0.5
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP15P15GH-HF
f=1.0MHz
4000
12
3000
V DS = - 80 V
I D = - 18 A
C (pF)
-VGS , Gate to Source Voltage (V)
15
9
C iss
2000
6
1000
3
C oss
C rss
0
0
0
20
40
60
1
80
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
Normalized Thermal Response (Rthjc)
1
100us
1ms
-ID (A)
10
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
VG
80
PD (W)
QG
-10V
60
QGS
QGD
40
20
Charge
Q
0
0
50
100
150
T C , Case Temperature ( o C )
Fig 11. Typical Power Dissipation
Fig 12. Gate Charge Waveform
4