<£e.mi-(lonaaakoi \Piodudi, TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN switching transistor BFX85 FEATURES PINNING • High current (max. 1 A) • Low voltage (max. 60 V). PIN 1 2 APPLICATIONS 3 DESCRIPTION emitter base collector, connected to case • General purpose switching and amplification • Industrial applications. DESCRIPTION NPN transistor in a TO-39 metal package. Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA PARAMETER SYMBOL VCBO VCEO Ic Ptot CONDITIONS collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time hFE fr toff MIN. TYP. MAX. UNIT open emitter open base „ - 100 V - - 60 V - - 1 A T amb <;25*C - - 800 mW Tease 51 00 °C - - W lc=150mA;V CE = 10V 70 142 2.86 - lc = 50 mA; VCE = 10 V; f = 100 MHz 50 - - MHz 360 - ns Icon = 150 mA; !Bon = 15 mA; la* = -15 mA - LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO >c ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation open emitter - 100 open base open collector - 60 - 6 V - 1 A - 1 A 100 mA Tamb $ 25 C C _ 800 mW Tcase 5 25 3C - 5 W W 25°CsT c a s e ^100 0 C Tstg Tj Tamb UNIT MAX. MIN. CONDITIONS storage temperature junction temperature operating ambient temperature V V - 2.86 -65 +150 C - 175 "C -65 +150 •c THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT P-thha thermal resistance from junction to ambient in free air 200 KM/ Rthj-c thermal resistance from junction to case 35 K/W Quality Semi-Conductors BFX85 NPN switching transistor CHARACTERISTICS TJ = 25 ' C unless otherwise specified. SYMBOL ICBO !EBO PARAMETER collector cut-off current emitter cut-off current CONDITIONS IE = 0; VCB = 80 V |E = 0; VCB = 80V;Tj = 100 >C IE = 0; VCB = 100V |E = 0; V CB = 100V;Tj = 100°C lc = 0; VEB = 5 V lc = 0;V E B = 5 V ; T j = 1 0 0 ° C lc = 0; VEB = 6 V l c = 10mA; VCE = 10V lc=150mA;VCE=10V lc = 500mA;V C E=10V hFE DC current gain VcEsat lc=1 A;VCE=10V collector-emitter saturation voltage IG = 1 0 mA; IB = 1 mA l c = 150 mA; IB = 15 mA lc = 500 mA; IB = 50 mA l c = 1 A; IB = 100mA VeEsat base-emitter saturation voltage Co collector capacitance fr transition frequency \= 10 mA; IB = 1 mA lc = 150mA; IB = 15mA MIN. 50 70 30 15 - lc = 50 mA; VCE = 10 V; f = 100 MHz 50 lc = 500 mA; IB = 50 mA l c = 1 A; IB = 100mA |E = ie = 0; VCB = 1 0 V ; f = 1 MHz TYP. MAX. UNIT 2 0.1 50 nA 2.5 500 30 50 HA nA HA nA 2.5 500 MA nA 10 0.5 2 0.1 10 90 142 90 50 150 150 0.35 0.66 0.69 0.92 _ 200 350 1 1.6 1.2 1.3 1.5 2 12 mV mV V V V V V V 1.15 1.4 7 185 - pF MHz 55 15 40 360 300 60 - ns ns ns ns ns ns Switching Times (between 10% and 90% levels) see Fig. 2 ton td turn-on time delay time tr rise time toff turn-off time ts storage time tf fall time Icon = 150 mA; leon = 15 mA; lBoff = -15mA -