Diode Semiconductor Korea Schottky Barrier Diode MMBD352W FEATURES z Pb Very low capacitance-less than 1.0Pf Lead-free @zero volts. z Low forward voltage-0.5 Voltage(Typ.) @IF=10mA. APPLICATIONS z For UHF mixer applications. SOT-323 ORDERING INFORMATION Type No. Marking Package Code MMBD352W M5 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Continuous reverse voltage VR 7.0 V Power Dissipation Pd 200 mW Thermal resistance junction-to-ambient RθJA 625 Junction temperature Tj 150 ℃ Storage temperature range Tstg -55-+150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Typ. MAX UNIT Reverse current IR VR=3.0V. VR=7.0V 0.25 10 μA Forward voltage VF IF=10mA 0.60 V Diode capacitance CD VR=0V, f=1MHz 1.0 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea Schottky Barrier Diode MMBD352W PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J K 0.1Typical 2.1 2.3 All Dimensions in mm www.diode.kr Diode Semiconductor Korea Schottky Barrier Diode MMBD352W SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping MMBD352W SOT-323 3000/Tape&Reel www.diode.kr