CPH3449 Ordering number : ENA0953 SANYO Semiconductors DATA SHEET CPH3449 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 30 V ±12 V ID 1.5 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 6 A 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS Conditions ID=1mA, VGS=0V Unit max 30 V 1 µA ±10 µA 1.3 V IGSS VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 ⏐yfs⏐ RDS(on)1 VDS=10V, ID=800mA 1.3 ID=800mA, VGS=4V 165 215 mΩ RDS(on)2 Ciss 210 295 mΩ 130 pF 22 pF 16 pF Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, f=1MHz Marking : LF typ VDS=30V, VGS=0V ID=400mA, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz Input Capacitance Ratings min 2.2 S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92607PE TI IM TC-00000897 No. A0953-1/4 CPH3449 Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Ratings Conditions min typ Unit max td(on) tr See specified Test Circuit. 9 See specified Test Circuit. 20 ns td(off) tf See specified Test Circuit. 23 ns Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD ns See specified Test Circuit. 29 ns VDS=10V, VGS=4V, ID=1.5A VDS=10V, VGS=4V, ID=1.5A 2.2 nC 0.52 nC VDS=10V, VGS=4V, ID=1.5A IS=1.5A, VGS=0V Package Dimensions 0.52 nC 0.9 1.2 V Switching Time Test Circuit unit : mm (typ) 7015A-004 VDD=15V VIN 4V 0V 0.6 2.9 0.15 0.2 D VOUT PW=10µs D.C.≤1% 0.05 1.6 2.8 ID=800mA RL=18.75Ω VIN 3 G 0.6 1 2 0.95 1 : Gate 2 : Source 3 : Drain CPH3449 P.G 50Ω S 0.9 0.2 0.4 SANYO : CPH3 Ta= --25 25 °C °C 1.8 1.6 0.8 0.6 0.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.2 VGS=1.0V VDS=10V --25 °C 1.5V 4.0V 1.0 Ta =7 5° 25 C °C 1.2 Drain Current, ID -- A 2.5 V 3.0V 1.4 Drain Current, ID -- A ID -- VGS 2.0 75° C ID -- VDS 1.6 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 1.0 1.5 2.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 500 0.5 IT06102 2.5 IT06103 RDS(on) -- Ta 500 450 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 400 350 300 800mA 250 ID=400mA 200 150 100 50 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT06104 450 400 350 300 A 400m , I D= V 5 . =2 00mA VGS I D=8 , V 4 = VGS 250 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT06105 No. A0953-2/4 CPH3449 ⏐yfs⏐ -- ID 3 C 25° 2 5°C Ta= 1.0 --2 C 75° 7 5 3 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 0.01 0.2 5 td(off) tf 10 7 5 td(on) tr 0.6 1.1 1.2 IT06107 3 2 Ciss 100 7 5 Coss Crss 2 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT06108 0 10 7 5 Drain Current, ID -- A 3.0 2.5 2.0 1.5 1.0 3 2 0 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC IT06110 15 20 25 30 IT06109 ASO IDP=6A PW≤10µs 10 0 1m µ s s 10 ms ID=1.5A 1.0 7 5 DC 3 2 Operation in this area is limited by RDS(on). 10 0m s op era tio n 0.1 7 5 3 2 0.5 0.5 10 2 VDS=10V ID=1.5A 0 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 4.0 Gate-to-Source Voltage, VGS -- V 1.0 3 Drain Current, ID -- A Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT12978 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W 0.9 f=1MHz 2 3.5 0.8 5 3 1.0 0.01 0.7 7 Ciss, Coss, Crss -- pF 2 100 7 5 0.5 Ciss, Coss, Crss -- VDS 1000 3 2 0.4 Diode Forward Voltage, VSD -- V VDD=15V VGS=4V 3 0.3 IT06106 SW Time -- ID 1000 7 5 Switching Time, SW Time -- ns 3 2 5°C 25° C --25 °C 5 VGS=0V Ta= 7 7 IS -- VSD 10 7 5 VDS=10V Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 10 1.0 0.9 M ou nte 0.8 do na ce ram 0.6 ic bo ard (9 00 0.4 mm 2 ✕0 .8m 0.2 m) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12979 No. A0953-3/4 CPH3449 Note on usage : Since the CPH3449 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2007. Specifications and information herein are subject to change without notice. PS No. A0953-4/4