IXYS IXKH20N60C5 Coolmosâ ¢ 1) power mosfet Datasheet

IXKH 20N60C5
IXKP 20N60C5
CoolMOS™ 1) Power MOSFET
ID25
= 20 A
VDSS
= 600 V
RDS(on) max = 0.2 Ω
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
D
TO-247 AD (IXKH)
G
G
D
q D(TAB)
S
S
TO-220 AB (IXKP)
G
D
S
Features
MOSFET
Symbol
Conditions
VDSS
TVJ = 25°C
Maximum Ratings
VGS
ID25
ID90
TC = 25°C
TC = 90°C
EAS
EAR
single pulse
repetitive
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
Symbol
Conditions
ID = 6.6 A; TC = 25°C
600
V
± 20
V
20
13
A
A
435
0.66
mJ
mJ
50
V/ns
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ.
max.
180
200
3
3.5
V
1
µA
µA
RDSon
VGS = 10 V; ID = 10 A
VGS(th)
VDS = VGS; ID = 1.1 mA
IDSS
VDS = 600 V; VGS = 0 V
IGSS
VGS = ± 20 V; VDS = 0 V
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
Qg
Qgs
Qgd
VGS = 0 to 10 V; VDS = 400 V; ID = 10 A
32
8
11
td(on)
tr
td(off)
tf
VGS = 10 V; VDS = 400 V
ID = 10 A; RG = 3.3 Ω
10
5
50
5
2.5
TVJ = 25°C
TVJ = 125°C
10
100
1520
72
RthJC
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
mΩ
nA
• fast CoolMOS™ 1) power MOSFET
- 4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
1)
CoolMOS™ is a trademark of
Infineon Technologies AG.
pF
pF
45
nC
nC
nC
ns
ns
ns
ns
0.60
K/W
20080523d
1-4
IXKH 20N60C5
IXKP 20N60C5
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ.
IS
VGS = 0 V
VSD
IF = 10 A; VGS = 0 V
0.9
trr
QRM
IRM
IF = 10 A; -diF/dt = 100 A/µs; VR = 400 V
340
5.5
33
max.
10
A
1.2
V
ns
µC
A
Component
Symbol
Conditions
TVJ
Tstg
operating
Md
mounting torque
Symbol
Conditions
Maximum Ratings
TO-247
TO-220
with heatsink compound
Weight
TO-247
TO-220
0.8 ... 1.2
0.4 ... 0.6
Nm
Nm
TO-247
TO-220
typ.
max.
0.25
0.50
K/W
K/W
6
2
g
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
°C
°C
Characteristic Values
min.
RthCH
-55...+150
-55...+150
20080523d
2-4
IXKH 20N60C5
IXKP 20N60C5
TO-247 AD Outline
Symbol
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
ØP1
TO-220 AB Outline
Millimeter
Min. Max.
Inches
Min. Max.
A
B
12.70 13.97
14.73 16.00
0.500 0.550
0.580 0.630
C
D
9.91
3.54
10.66
4.08
0.390 0.420
0.139 0.161
E
F
5.85
2.54
6.85
3.18
0.230 0.270
0.100 0.125
G
H
1.15
2.79
1.65
5.84
0.045 0.065
0.110 0.230
J
K
0.64
2.54
1.01
BSC
0.025 0.040
0.100 BSC
M
N
4.32
1.14
4.82
1.39
0.170 0.190
0.045 0.055
Q
R
0.35
2.29
0.56
2.79
0.014 0.022
0.090 0.110
F
N
B
E
D
A
H
G
J
Q
K
R
L
250
Millimeters
min
max
4.70
5.30
2.21
2.59
1.50
2.49
20.79
21.45
15.48
16.24
4.31
5.48
5.46 BSC
19.80
20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
Dim.
M
C
Inches
min
max
0.185
0.209
0.087
0.102
0.059
0.098
0.819
0.845
0.610
0.640
0.170
0.216
0.215 BSC
0.780
0.800
0.177
0.140
0.144
0.212
0.244
0.242 BSC
0.039
0.055
0.065
0.094
0.102
0.135
0.015
0.035
0.515
0.020
0.053
0.530
0.291
75
35
TJ = 125°C
TJ = 25°C
VGS = 20 V
10 V
60
200
20 V
30
10 V
7V
VGS = 8 V
8V
6V
25
5.5 V
7V
45
150
Ptot [ W]
I D [A ]
I D [A ]
20
6V
15
5.5 V
10
30
100
5V
4.5 V
15
50
5V
5
4.5 V
0
0
0
40
80
120
TC [°C]
Fig. 1 Power dissipation
160
0
0
5
10
V
[V]
Fig. 2 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
DS
15
20
0
5
10
15
20
V DS [V]
Fig. 3 Typ. output characteristics
20080523d
3-4
IXKH 20N60C5
IXKP 20N60C5
1.2
VDS =
1
80
0.6
6.5 V
TJV = 150°C
ID = 10 A
VGS = 10 V
6V
5.5 V
5V
VDS > 2·RDS(on) max · ID
0.5
25 °C
10 V
60
0.4
0.8
I D [A ]
[Ω]
DS (on)
0.3
40
98 %
R
R
DS (on)
[Ω]
7V
0.6
0.4
0.2
0.2
0.1
TJ = 150 °C
typ
20
0
0
0
0
10
20
30
-60
40
-20
20
60
140
0
180
2
Fig. 4 Typ. drain-source on-state
resistance characteristics of IGBT
10
10
VDS 1=20120
V
V
25 °C
1
10
4
10
3
10
2
10
1
40 0V
7
Ciss
TJ =150 °C
C [pF ]
5
V
GS
I F [A ]
[V ]
6
4
10
10
VGS = 0 V
f = 1 MHz
8
150 °C, 98%
8
[V]
5
9
25 °C, 98%
GS
Fig. 6 Typ. transfer characteristics
Fig. 5 Drain-source on-state resistance
2
6
V
ID = 10 A pulsed
10
4
T j [°C]
I D [A]
10
100
Coss
0
3
2
Crss
1
10
-1
10
0
0
0.5
1
V
SD
1.5
2
0
10
20
[V]
Q
Fig. 7 Forward characteristic
of reverse diode
Fig. 8
500
gate
30
0
100
200
[nC]
V
300
DS
400
500
[V]
Fig. 9 Typ. capacitances
Typ. gate charge
700
10
ID = 6.6 A
0
40
0
ID = 0.25 mA
0.5
400
660
620
V
E
AS
B R (DS S )
[m J ]
[V ]
300
Z thJ C [ K /W ]
0.2
200
D = tp/T
0.1
10
-1
0.05
0.02
0.01
580
single pulse
100
0
10
540
20
60
100
140
T j [°C]
Fig. 10 Avalanche energy
180
-60
-20
20
60
140
180
T j [°C]
Fig. 11 Drain-source breakdown voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
100
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t p [s]
Fig. 12 Max. transient thermal
impedance
20080523d
4-4
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