7 BC848F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SA SOT-23F : hFE rank Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KST-2091-000 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 PIN Connections 1. Base 2. Emitter 3. Collector 1 BC848F (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 30 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 5 V Collector current IC 100 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 Base-Emitter turn on voltage VBE(ON) VCE=5V, IC=2mA Base-Emitter saturation voltage VBE(sat) Collector-Emitter saturation voltage VCE(sat) Collector cut-off current DC current gain Transition frequency ICBO * hFE fT Test Condition Min. Typ. Max. Unit 30 - - V 550 - 700 mV IC=100mA, IB=5mA - 900 - mV IC=100mA, IB=5mA - - 600 mV VCB=35V, IE=0 - - 15 nA 110 - 800 - VCE=5V, IC=10mA - 150 - MHz VCE=5V, IC=2mA Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - - 4.5 pF Noise figure NF VCE=5V, IC=200µA, f=1KHz, Rg=2KΩ - - 10 dB * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-2091-000 2 BC848F Electrical Characteristic Curves Fig. 1 PC –Ta Fig. 3 IC -VCE Fig. 2 IC -VBE Fig. 4 hFE -IC Fig. 5 VCE(sat) -IC KST-2091-000 3