ISOCOM H11D1X High voltage optically coupled isolator phototransistor output Datasheet

H11D1X, H11D2X, H11D3X, H11D4X
H11D1, H11D2, H11D3, H11D4
HIGH VOLTAGE OPTICALLY
COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
Dimensions in mm
'X' SPECIFICATIONAPPROVALS
z
VDE 0884 in 3 available lead forms : - STD
- G form
- SMD approved to CECC 00802
2.54
7.0
6.0
1
2
6
5
3
4
1.2
7.62
6.62
DESCRIPTION
The H11D series of optically coupled isolators
consist of infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
z
Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
z
High Isolation Voltage (5.3kVRMS ,7.5kVPK )
z
High BVCER ( 300V - H11D1, H11D2 )
( 200V - H11D3, H11D4 )
z
All electrical parameters 100% tested
z
Custom electrical selections available
APPLICATIONS
z
DC motor controllers
z
Industrial systems controllers
z
Measuring instruments
z
Signal transmission between systems of
different potentials and impedances
OPTION G
OPTION SM
7.62
SURFACE MOUNT
0.6
0.1
10.46
9.86
7.62
4.0
3.0
13°
Max
0.5
3.0
0.5
0.26
3.35
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
100mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCER
H11D1, H11D2
H11D3, H11D4
Collector-base Voltage BVCBO
H11D1, H11D2
H11D3, H11D4
Emitter-collector Voltage BVECO
Collector Current
Power Dissipation
(RBE= 1MΩ )
300V
200V
300V
200V
6V
100mA
150mW
POWER DISSIPATION
1.25
0.75
0.26
10.16
Total Power Dissipation
250mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel: (01429)863609 Fax : (01429) 863581 e-mail
[email protected] http://www.isocom.com
14/8/08
DB91077
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
Input
MIN TYP MAX UNITS
Forward Voltage (VF)
1.2
1.5
V
IF = 10mA
10
μA
VR = 6V
300
200
V
V
IC = 1mA, RBE = 1MΩ
( note 2 )
300
200
6
V
V
V
IC = 100μA
100
250
nA
μA
100
250
nA
μA
VCE = 200V,RBE=1MΩ
VCE= 200V,RBE=1MΩ,
TA=100°C
VCE = 100V,RBE=1MΩ
VCE= 100V,RBE=1MΩ,
TA=100°C
Reverse Current (IR)
Output
Collector-emitter Breakdown (BVCER )
H11D1, H11D2
H11D3, H11D4
Collector-base Breakdown (BVCBO)
H11D1, H11D2
H11D3, H11D4
Emitter-collector Breakdown (BVECO )
Collector-emitter Dark Current (ICER )
H11D1, H11D2
H11D3, H11D4
Coupled
Current Transfer Ratio (CTR)
20
0.4
5300
7500
5x1010
Input-output Isolation Resistance RISO
Turn-on Time
ton
Turn-off Time
toff
Note 1
Note 2
IE = 100μA
%
Collector-emitter Saturation VoltageVCE(SAT)
Input to Output Isolation Voltage VISO
TEST CONDITION
5
5
10mA IF , 10V VCE ,
RBE = 1MΩ
10mA IF , 0.5mA IC ,
RBE = 1MΩ
See note 1
See note 1
VIO = 500V (note 1)
VCC = 10V, IC= 2mA,
RL = 100Ω , fig 1
V
VRMS
VPK
Ω
μs
μs
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
VCC
Input
ton
toff
RL = 100Ω
tr
Output
tf
Output
10%
10%
90%
90%
FIG 1
14/8/08
DB91077m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
Relative Current Transfer Ratio vs.
Forward Current ( normalised to 10mA IF )
10
Relative current transfer ratio
Collector power dissipation PC (mW)
400
300
200
100
0
1.0
0.1
VCE = 10V
RBE = 1MΩ
TA = 25°C
0.01
-30
0
25
50
75
100
1
125
5
10
20
50
Forward current IF (mA)
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Ambient Temperature
80
Relative current transfer ratio
70
Forward current IF (mA)
2
60
50
40
30
20
10
2.4
2.2
2.0
1.8
Normalised to VCE = 10V ,
IF = 10mA , RBE = 1MΩ ,
TA = 25°C
IF = 20mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IF = 10mA
IF = 5mA
0
-30
0
25
50
75
100
125
-30
Ambient temperature TA ( °C )
0
25
50
75
Ambient temperature TA ( °C )
100
Collector-base Current vs.
Ambient Temperature
Forward Voltage vs. Forward Current
Collector-base current ICBO (μA)
800
Forward voltage VF (V)
1.4
TA = -55°C
1.3
1.2
TA = +25°C
1.1
1.0
TA= +100°C
0.9
0.8
VCB= 10V
IF = 50mA
600
500
400
VCB= 200V VCB= 10V VCB= 10V
IF = 10mA IF = 10mA IF = 5mA
300
200
100
0
0.1 0.2
0.5
1
2
5 10
Forward current IF (mA)
14/8/08
700
20
50
-30
0
25
50
75
100
Ambient temperature TA ( °C )
DB91077m-AAS/A3
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