LANSDALE MC13150FTB Narrowband fm coilless detector if subsystem Datasheet

ML13150
Narrowband FM Coilless
Detector IF Subsystem
NARROWBAND FM COILLESS DETECTOR IF SUBSYSTEM FOR CELLULAR AND ANALOG APPLICATIONS
SEMICONDUCTOR TECHNICAL DATA
Legacy Device: Motorola MC13150
ML13150-A9P
PLASTIC PACKAGE
(LQFP-24)
The ML13150 is a narrowband FM IF subsystem targeted at
cellular and other analog applications. The ML13150 has an
onboard Colpitts VCO that can be crystal controlled or phased
lock for second LO in dual conversion receivers. The mixer is a
double balanced configuration with excellent third order intercept. It is useful to beyond 200 MHz. The IF amplifier is split to
accommodate two low cost cascaded filters. RSSI output is
derived by summing the output of both IF sections., The quadrature detector is a unique design eliminating the conventional
tunable quadrature coil.
24
32
Linear Coilless Detector
Adjustable Demodulator Bandwidth
2.5 to 6.0 Vdc Operation
Low Drain Current <2.0 mA
Typical Sensitivity of 2.0 µV for 12 dB SINAD
IIP3, Input Third Order Intercept Point of 0 dBm
•
•
•
•
ML13150-B9P
PLASTIC PACKAGE
(LQFP-32)
1
CROSS REFERENCE/ORDERING INFORMATION
MOTOROLA
LANSDALE
PACKAGE
LQFP-24
LQFP-32
Applications for the ML13150 include cellular, CT-1, 900 MHz
cordless telephone, data links and other radio systems utilizing
narrowband FM modulation.
•
•
•
•
•
•
1
MC13150FTA
MC13150FTB
ML13150-A9P
ML13150-B9P
Note: Lansdale lead free (Pb) product, as it
becomes available, will be identified by a part
number prefix change from ML to MLE.
RSSI Range of Greater Than 100 dB
Internal 1.4 kΩ Terminations for 455 kHz Filters
Split IF for Improved filtering and Extended RSSI Range
Operating Temperature Range - TA = -40° to +85°C
PIN CONNECTIONS
Mixout
1
VCC1
2
VEE1
LOe
LOb
Enable
RSSI
Mix in
VEE1
VCC
(N/C)
LOe
LOb
VCC
(N/C)
Enable
RSSI
24
23
22
21
20
19
32
31
29
28
27
26
25
18 RSSIb
Mixer
MixOut 1
30
24 RSSIb
Mixer
VCC1 2
17 DETout
IFd1
4
IFd2
5
IFout
6
IF
23 DETout
VCC (N/C) 3
22 VEE (N/C)
16 VEE2
IFin 4
21 VEE2
15 DET
Gain
IFd1 5
20 DETGain
14 AFTFilt
Limiter
13 AFT
out
IF
VCC (N/C) 6
IFd2 7
Detector
3
Detector
IFin
LQFP-32
Mix in
LQFP-24
Limiter
Page 1 of 20
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LIMd1
LIMd2
BWAdj
FAdj
11
12
13
14
15
16
FAdj
LIM in
10
BWAdj
V CC2
9
LIM d2
VCC
(N/C)
12
LIM d1
11
VCC
(N/C)
10
LIM in
9
V CC2
8
18 AFTFilt
17 AFTout
IFout 8
7
19 VEE (N/C)
Issue A
LANSDALE Semiconductor, Inc.
ML13150
MAXIMUM RATINGS
Rating
Pin
Symbol
Value
Unit
Power Supply Voltage
2, 9
VCC(max)
6.5
Vdc
Junction Temperature
-
TJmax
+150
C
Storage Temperature Range
-
Tstg
-65 to +150
C
NOTE:
1. Devices should not be operated at or outside these values. The “Recommended Operating
Limits” provide for actual device operation.
2. ESD data available upon request.
RECOMMENDED OPERATING CONDITIONS
Rating
Power Supply Voltage
–40 C
TA = 25 C
TA 85 C
Pin
Symbol
Value
Unit
2, 9
21, 31
VCC
VEE
2.5 to 6.0
0
Vdc
32
fin
10 to 500
MHz
(See Figure 22)
Input Frequency
Ambient Temperature Range
-
TA
-40 to +85
C
Input Signal Level
32
Vin
0
dBm
DC ELECTRICAL CHARACTERISTICS (TA = 25 C, VCC1 = VCC2 = 3.0 Vdc, No Input Signal.)
Characteristics
Total Drain Current
(See Figure 2)
Condition
Pin
Symbol
Min
Typ
Max
Unit
VS = 3.0 Vdc
2+9
ITOTAL
-
1.7
3.0
mA
-
2+9
-
-
40
-
nA
Supply Current, Power Down
(See Figure 3)
AC ELECTRICAL CHARACTERISTICS (TA = 25 C, VS = 3.0 Vdc, fRF = 50 MHz, fLO = 50.455 MHz,
LO Level = –10 dBm, see Figure 1 Test Circuit*, unless otherwise specified.)
Characteristics
Condition
Pin
Symbol
Min
Typ
Max
Unit
fmod = 1.0 kHz;
fdev = ±5.0 kHz
32
-
-
–100
-
dBm
RSSI Dynamic Range
(See Figure 7)
-
25
-
-
100
-
dB
Input 1.0 dB Compression Point
Input 3rd Order Intercept Point
(See Figure 18)
-
-
1.0 dB C. Pt.
IIP3
-
-1 1
-1.0
-
dBm
Measured with No IF Filters
-
∆BW adj
-
26
-
kHz/µA
Pin = -30 dBm;
PLO = -10 dBm
32
-
-
10
-
dB
Single-Ended
32
-
-
200
-
Ω
-
1
-
-
1.5
-
kΩ
-
29
-
30
63
100
µA
IF and Limiter RSSI Slope
Figure 7
25
-
-
0.4
-
µA/dB
IF Gain
12 dB SINAD Sensitivity
(See Figure 15)
Coilless Detector Bandwidth
Adjust (See Figure 11)
MIXER
Conversion Voltage Gain
(See Figure 5)
Mixer Input Impedance
Mixer Output Impedance
LOCAL OSCILLATOR
LO Emitter Current
(See Figure 26)
IF & LIMITING AMPLIFIERS SECTION
Figure 8
4, 8
-
-
42
-
dB
IF Input & Output Impedance
-
4, 8
-
-
1.5
-
kΩ
Limiter Input Impedance
-
10
-
-
1.5
-
kΩ
Limiter Gain
-
-
-
-
96
-
dB
* Figure 1 Test Circuit uses positive (VCC) Ground.
Page 2 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
AC ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C, VS = 3.0 Vdc, fRF = 50 MHz, fLO = 50.455 MHz,
LO Level = -10 dBm, see Figure 1 T est Circuit*, unless otherwise specified.)
Characteristics
Condition
Pin
Symbol
Min
Typ
Max
Unit
Frequency Adjust Current
Figure 9,
fIF = 455 kHz
16
-
41
49
56
µA
Frequency Adjust Voltage
Figure 10,
fIF = 455 kHz
16
-
600
650
700
mVdc
Bandwidth Adjust Voltage
Figure 12,
I15 = 1.0 µA
15
-
-
570
-
mVdc
-
23
-
-
1.36
-
Vdc
fdev = ±3.0 kHz
23
-
85
122
175
mVrms
DETECTOR
Detector DC Output Voltage
(See Figure 25)
Recovered Audio Voltage
* Figure 1 Test Circuit uses positive (VCC) Ground.
Figure 1. Test Circuit
LO Input
VEE1
10 µ
220 n
+
100 n
1:4
Z Xformer
Mixer
In
Enable
49.9
RSSI
100 n
31
32
220 n
Mixer
Out
1
1.5 k
30
29
28
27
25
2
RSSI
Buffer
24
Mixer
VCC1
Detector
Output
23
Local
Oscillator
100 p
RSSI
Buffer
3
IF
In
26
VEE1
22
RL
100 k
220 n
49.9
4
VEE2 21
5
20
220 n
220 n
(6)
IF
220 n
7
IF Amp
Out
Limiter
220 n
8
1.5 k
Limiter
In
19
220 n
Detector
6
11
220 n
12
13
14
220 n
220 n
220 n
15
I15
10 µ
+
VEE2
18
17
VCC2
9
10
RS
100 k
100 k V18–V17 = 0;
fIF = 455 kHz
16
I16
49.9
This device contains 292 active transistors.
Page 3 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
ML13150 CIRCUIT DESCRIPTION
GENERAL DESCRIPTION
The ML13150 is a very low power single conversion narrowband FM receiver incorporating a split IF. This device
can be used as a single conversion or as the backend in
analog narrowband FM systems such as 900 MHz cordless phones, and narrowband data links with data rates up
to 9.6 k baud. It contains a mixer, oscillator, extended
range received signal strength indicator (RSSI), RSSI
buffer, IF amplifier, limiting IF, a unique coilless quadrature detector and a device enabler function (see Package
Pin Outs/Block Diagram).
LOW CURRENT OPERATION
The ML13150 is designed for battery and portable
applications. Supply current is typically 1.7 mAdc at 3.0
Vdc. Figure 2 shows the supply current versus supply
voltage.
ENABLE
The enable function is provided for battery powered
operation. The enabled pin is pulled down to enable the
regulators. Figure 3 shows the supply current versus
enable voltage, Venable (relative to VCC) needed to
enable the device. Note that the device is fully enabled at
VCC - 1.3 Vdc. Figure 4 shows the relationship of the
enable current, Ienable, to enable voltage, Venable.
MIXER
The mixer is a double-balanced four quadrant multiplier
and is designed to work up to 500 MHz. It has a single
ended input. Figure 5 shows the mixer gain and saturated
output response as a function of input signal drive and for
–10 dBm LO drive level. This is measured in the application circuit shown in Figure 15 in which a single LC
matching network is used. Since the single–ended input
impedance of the mixer is 200 Ω, and alternate solution
uses a 1:4 impedance transformer to match the mixer to
50 Ω input impedance. The linear voltage gain of the
mixer alone is approximately 4.0 dB (plus an additional
6.0 dB for the transformer). Figure 6 shows the mixer
gain versus the LO input level for various mixer input
levels at 50 MHz RF input.
Page 4 of 20
The buffered output of the mixer is internally loaded,
resulting in an output impedance of 1.5kΩ.
LOCAL OSCILLATOR
The on–chip transistor operates with crystal and LC
resonant elements up to 220 MHz. Series resonant,
overtone crystals are used to achieve excellent local
oscillator stability. 3rd overtone crystals are used through
about 65 to 70 MHz. Operation for 70 MHz up to 200
MHz is feasible using the on–chip transistor with a 5th or
7th overtone crystal. To enhance operation using an
overtone crystal, the internal transistor's bias is increased
by adding an external resistor from Pin 29 (in 32 pin QFP
package) to VEE to keep the oscillator on continuously or
it may be taken to the enable pin to shut is off when the
receiver is disabled. –10 dBm of local oscillator drive is
needed to adequately drive the mixer (Figure 6). The
oscillator configurations specified above are described in
the application section.
RSSI
The received signal strength indicator (RSSI) output is a
current proportional to the log of the received signal
amplitude. The RSSI current output is derived by
summing the currents from the IF and limiting amplifier
stages. An external resistor at Pin 25 (in 32 pin QFP
package) sets the voltage range or swing of the RSSI
output voltage. Linearity of the RSSI is optimized by
using external ceramic bandpass filters which have an
insertions loss of 4.0 dB. The RSSI circuit is designed to
provide 100+ dB of dynamic range with temperature
compensation (see Figures 7 and 23 which show the RSSI
response of the applications circuit).
RSSI BUFFER
The RSSI buffer has limitations in what loads it can
drive. It can pull loads well towards the positive and
negative supplies, but has problems pulling the load away
from the supplies. The load should be biased at half
supply to overcome this situation.
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
Figure 2. Supply Current
versus Supply Voltage
10–2
ISUPPLY, SUPPLY CURRENT (A)
ISUPPLY, SUPPLY CURRENT (mA)
2.0
1.6
1.2
0.8
0.4
TA = 25°C
0
1.5
2.5
3.5
4.5
5.5
6.5
10–5
10–6
10–7
10–8
10–9
0.7
0.9
1.1
1.3
1.5
VENABLE, ENABLE VOLTAGE (Vdc)
Figure 4. Enable Current
versus Enable Voltage
Figure 5. Mixer IF Output Level versus
RF Input Level
20
VCC = 3.0 Vdc
TA = 25°C
60
MIXER IF OUTPUT LEVEL (dBm)
IENABLE, ENABLE CURRENT ( µ A)
10–4
VENABLE, SUPPLY VOLTAGE (Vdc)
50
40
30
20
10
0
0
0.4
0.8
1.2
1.6
2.0
0
–10
–20
–40
–40
–30
–20
–10
0
RF INPUT LEVEL (dBm)
Figure 6. Mixer IF Output Level versus
Local Oscillator Input Level
Figure 7. RSSI Output Current
versus Input Signal Level
10
20
–20
0
50
VEE = –3.0 Vdc
TA = 25°C
RSSI OUTPUT CURRENT (µA)
RF In = 0 dBm
–20 dBm
–20
–40 dBm
–40
–60
–80
–60
fRF = 50 MHz; fLO = 50.455 MHz
LO Input Level = –10 dBm
(100 mVrms)
(Rin = 50 Ω; Rout = 1.4 kΩ
–30
VENABLE, ENABLE VOLTAGE (Vdc)
20
0
VEE = –3.0 Vdc
TA = 25°C
10
–50
–50
–10
MIXER IF OUTPUT LEVEL (dBm)
VCC = 3.0 Vdc
TA = 25°C
VENABLE Measured
Relative to VCC
10–3
10–10
0.5
7.5
70
fRF = 50 MHz; fLO = 50.455 MHz
Rin = 50 Ω; Rout = 1.4 kΩ
40
30
VCC = 3.0 Vdc
f = 50 MHz
fLO = 50.455 MHz
455 kHz
Ceramic Filter
See Figure 15
20
10
0
–50
–40
–30
–20
–10
0
LO DRIVE (dBm)
Page 5 of 20
Figure 3. Supply Current
versus Enable Voltage
–120
–100
–80
–60
–40
SIGNAL INPUT LEVEL (dBm)
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
IF AMPLIFIER
The first IF amplifier section is composed of three differential
stages. This section has internal dc feedback and external
input decoupling for improved symmetry and stability. The
total gain of the IF amplifier block is approximately 42 dB at
455 kHz. Figure 8 shows the gain of the IF amplifier as a
function of the IF frequency.
The fixed internal input impedance is 1.5 kΩ; it is designed
for applications where a 455 kHz ceramic filter is used and
no external output matching is necessary since the filter
requires a 1.5 kΩ source and load impedance.
Overall RSSI linearity is dependent on having total midband
attenuation of 10 dB (4.0 insertion loss plus 6.0 dB
impedance matching loss) for the filter. The output of the IF
amplifier is buffered and the impedance if 1.5kΩ.
LIMITER
The limiter section is similar to the IF amplifier section
except that six stages are used. The fixed internal input
impedance is 1.5 kΩ. The total gain of the limiting
amplifier sections is approximately 96 dB. This IF limiting
amplifier section internally drives the quadrature detector
section.
Figure 9. Fadj Current
versus IF Frequency
50
120
45
100
Fadj CURRENT ( µA)
IF AMP GAIN (dB)
Figure 8. IF Amplifier Gain
versus IF Frequency
40
35
Vin = 100 µV
Rin = 50 Ω
Rout = 1.4 kΩ
BW (3.0 dB) = 2.4 MHz
TA = 25°C
30
25
20
0.01
80
60
40
20
0
0.1
800
1.0
10
0
200
400
600
f, FREQUENCY (MHz)
f, IF FREQUENCY (kHz)
Figure 10. Fadj Voltage
versus Fadj Current
Figure 11. BWadj Current
versus IF Frequency
800
1000
480
500
3.5
VCC = 3.0 Vdc
TA = 25°C
VCC = 3.0 Vdc
BW 26 kHz/µA
3.0
750
BWadj CURRENT ( µA)
Fadj VOLTAGE (mVdc)
VCC = 3.0 Vdc
Slope at 455 kHz = 9.26 kHz/µA
700
650
2.5
2.0
1.5
1.0
0.5
600
0
20
40
60
80
100
0
400
Page 6 of 20
420
440
460
f, IF FREQUENCY (kHz)
Fadj CURRENT (µA)
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
COILLESS DETECTOR
The quadrature detector is similar to a PLL. There is an internal oscillator running at the IF frequency and two detector
outputs. One is used to deliver the audio signal and the other
one is filtered and used to tune the oscillator.
The oscillator frequency is set by and external resistor at the
Fadj pin. Figure 9 shows the control current required for a
particular frequency; Figure 10 shows the pin voltage at that
current. From this the value of RF is chosen. For example,
455 kHz would require a current of around 50 µA. The pin
voltage (Pin 16 in the 32 pin QFP package) is around 655mV
giving a resistor of 13.1 kΩ. Choosing 12 kΩ as the nearest
standard value gives a current of approximately 55 µA. The
5.0 µA difference can be taken up by the tuning resistor, RT.
The best nominal frequency for the AFTout pin (Pin 17)
would be half supply. A supply voltage of 3.0 Vdc suggests a
resistor value of (1.5 – 0.655) V/5.0 µA = 169 kΩ. Choosing
150 kΩ would give a tuning current of 3/150 kΩ = 20 µA.
From Figure 9 this would give a tuning range of roughly 10
kHz/µA or ± 100 kHz which should be adequate.
The bandwidth can be adjusted with the help of Figure 11.
10–4
So, for example, 150 kΩ and 1.0 µF give a 3.0 dB point of
4.5 kHz. The recovered audio is set by RL to give roughly
50mV per kHz deviation per 100 k of resistance. The dc
level can be shifted by RS from the nominal 0.68 V by the
following equation:
Detector DC Output = ((RL + RS)/RS) 0.68 Vdc
Thus RS = RL sets the output at 2 x 0.68 = 1.36 V; RL =
2RS sets the output at 3 x .068 = 2.0V.
Figure 12. BWadj Current
versus BWadj Voltage
Figure 13. Demodulator Output
versus Frequency
10
VCC = 3.0 Vdc
TA = 25 C
10–5
10–6
10–7
2.3
RTCT = 0.68/f3dB.
DEMODULATOR OUTPUT (dB)
BWadj CURRENT (A)
10–3
For example, 1.0 µA would give a band width of ± 13 kHz.
The voltage across the bandwidth resistor, RB from Figure 12
is VCC – 2.44 Vdc = 0.56 Vdc for VCC = 3.0 Vdc, so RB =
0.56V/1.0 µA = 560 kΩ. Actually the locking range will be
±13 kHz while the audio bandwidth wil be approximately
±8.4 kHz due to an internal filter capacitor. This is verified in
Figure 13. For some applications it may be desireable that the
audio bandwidth is increased; this is done by reducing RB.
Reducing RB widens the detector bandwidth and improves
the distortion at high input levels at the expense of 12 dB
SINAD sensitivity. The low frequency 3.0dB point is set by
the tuning circuit such that the product
2.5
2.7
0
RB = 560 k
–10
–20
–30
–40
–50
0.1
BWadj VOLTAGE (Vdc)
Page 7 of 20
VCC = 3.0 Vdc
TA = 25 C
fRF = 50 MHz
fLO = 50.455 MHz
LO Level =–10 dBm
No IF Bandpass Filters
fdev = ±4.0 kHz
1.0
RB = 1.0 M
10
100
f, FREQUENCY (kHz)
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
Legacy Applications Information
EVALUATION PC BOARD
The evaluation PCB is very versatile and is intended to be
used across the entire useful frequency range of this device.
The center section of the board provides an area for attaching
all SMT components to the circuit side and radial leaded
components to the component ground side (see Figures 29
and 30). Additionally, the peripheral area surrounding the RF
core provides pads to add supporting and interface circuitry
as a particular application requires. There is an area dedicated
for a LNA preamp. This evaluation board will be discussed
and referenced in this section.
COMPONENT SELECTION
The evaluation PC board is designed to accommodate specific components, while also being versatile enough to use components from various manufacturers and coil types. The applications circuit schematic (Figure 15) specifies particular components that were used to achieve the results shown in the
typical curves but equivalent components should give similar
results. Component placement views are shown in Figures 27
and 28 for the application circuit in Figure 15 and for the
83.616 MHz crystal oscillator circuit in Figure 16.
INPUT MATCHING COMPONENTS
The input matching circuit shown in the application circuit
schematic (Figure 15) is a series L, shunt C single L section
which is used to match the mixer input to 50 Ω. An alternative input network may use 1:4 surface mount transformers or
BALUNs. The 12 dB SINAD sensitivity using the 1:4 impedance transformer is typically –100 dBm for fmod = 1.0 kHz
and fdev = ±5.0 kHz at f in = 50 MHz and fLO = 50.455
MHz (see Figure 14).
It is desirable to use a SAW filter before the mixer to provide
additional selectivity an adjacent channel rejection and
improved sensitivity. SAW filters sourced from Toko (Part
#SWS083GBWA) and Murata (Part # SAF83.16MA51X) are
excellent choices to easily interface with the MC13150 mixer.
They are packaged in a 12 pin low profile surface mount
ceramic package. The center frequency is 83.161 MHz and
the 3.0 dB bandwidth is 30 kHz.
Figure 14. S+N+D, N+D, N, 30% AMR
versus Input Signal Level
S+N+D, N+D, N, 30% AMR (dB)
20
10
S+N+D
0
–10
–20
–30
–40
–50
VCC = 3.0 Vdc
fmod = 1.0 kHz
fdev = ±5.0 kHz
fin = 50 MHz
N+D
30% AMR
fLO = 50.455 MHz
LO Level = –10 dBm
See Figure 15
N
–60
–120
–100
–80
–60
–40
INPUT SIGNAL (dBm)
Page 8 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
Legacy Applications Information
Figure 15. Application Circuit
(3)
LO Input
(1)
180 nH
100 n
51
100 n
32
31
30
29
28
27
26
VEE1
(2)
455 kHz
IF Ceramic
Filter
Mixer
VCC1
100 n
RSSI
Buffer
Local
Oscillator
1.0 n
22
VEE2
4
21
5
20
6
7
Limiter
1.0 n
RL
150 k
RS
150 k
19
(6)
IF
100 n
18
17
8
Detector
Output
23
3
1.0 n
100 n
RSSI
Buffer
24
1
2
82 k
25
Detector
RF/IF
Input
(4)
Enable
(5)
RSSI
11 p
1.0 µ
CT
VCC2
9
10
11
12
13
14
15
16
150 k
RT
100 n
455 kHz
IF Ceramic
Filter
100 n
10 µ
560 k
RB
12 k
RF
(6)
Coilless Detector
Circuit
+
VCC
NOTES: 1. Alternate solution is 1:4 impedance transformer (sources include Mini Circuits, Coilcraft and Toko).
2. 455 kHz ceramic filters (source Murata CFU455 series which are selected for various bandwidths).
3. For external LO source, a 51 Ω pullup resistor is used to bias the base of the on–board transistor as shown in Figure 15.
Designer may provide local oscillator with 3rd, 5th, or 7th overtone crystal oscillator circuit. The PC board is laid out to
accommodate external components needed for a Butler emitter coupled crystal oscillator (see Figure 16).
4. Enable IC by switching the pin to V EE.
5. The resistor is chosen to set the range of RSSI voltage output swing.
6. Details regarding the external components to setup the coilless detector are provided in the application section.
Page 9 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
Legacy Applications Information
LOCAL OSCILLATORS
HF & VHF APPLICATIONS
In the application schematic, an external sourced local oscillator is utilized in which the base is biased via a 51 Ω resistor to
VCC. However, the on–chip grounded collector transistor may
be used for HF and VHF local oscillators with higher order
overtone crystals. Figure 16 shows a 5th overtone oscillator at
83.616 MHz. The circuit uses a Butler overtone oscillator configuration. The amplifier is an emitter follower. The crystal is
driven from the emitter and is coupled to the high impedance
base through a capacitive tap network. Operation at the desired
overtone frequency is ensured by the parallel resonant circuit
formed by the variable inductor and the tap capacitors and parasitic capacitances of the on–chip transistor and PC board. The
variable inductor specified in the schematic could be replaced
with a high tolerance, high Q ceramic or air wound surface
mount component if the other components have tight enough
tolerance. A variable inductor provides an adjustment for gain
and frequency of the resonant tank ensuring lock up and
start–up of the crystal oscillator. The overtone crystal is chosen
with ESR of typically 80 Ω and 120 Ω maximum; if the resistive loss in the crystal is too high the performance of oscillator
may be impacted by lower gain margins.
A series LC network to ac ground (which is VCC) is comprised of the inductance of the base lead of on–chip transistor
and PC board traces and tap capacitors. Parasitic oscillations
often occur in the 200 to 800 MHz range. A small resistor is
placed in series with the base (Pin 28) to cancel the negative
resistance associated with this undesired mode of oscillation.
Since the base input impedance is so large, a small resistor in
the range of 27 to 68 Ω has very little effect on the desired
Butler mode of oscillation.
The crystal parallel capacitance, Co, provides a feedback path
that is low enough in reactance at frequencies of 5th overtones or higher to cause trouble. Co has little effect near resonance because of the low impedance of the crystal motional
arm (Rm-Lm-Cm). As the tunable inductor, which forms the
resonant tank with the tap capacitors, is tuned off the crystal
resonant frequency, it may be difficult to tell if the oscillation
is under crystal control. Frequency jumps may occur as the
inductor is tuned. In order to eliminate this behavior an inductor, Lo, is placed in parallel with the crystal. Lo is chosen to
resonant with the crystal parallel capacitance, Co, at the
desired operation frequency. This inductor provides a feedback path at frequencies well below resonance; however, the
parallel tank network of the tap capacitors and tunable inductor prevent oscillation at these frequencies.
Figure 16. ML13150 Overtone Oscillator
fRF = 83.16 MHz; f LO = 83.616 MHz
5th Overtone Crystal Oscillator
(4)
0.135 µH
MC13150
+
1.0 µ
33
Mixer
28
1.0 µH
39 p
39 p
29
(3)
27 k 5th OT
XTAL
VEE
10 n
31
VCC
Page 10 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
RECEIVER DESIGN CONSIDERATIONS
The curves of signal levels at various portions of the application receiver with respect to RF input level are shown in
Figure 17. This information helps determine the network
topology and gain blocks required ahead of the ML13150 to
achieve the desired sensitivity and dynamic range of the
receiver system. The PCB is laid out to accommodate a low
noise preamp followed by the 83.16 MHz SAW filter. In the
application circuit (Figure 15), the input 1.0 dB compression
point is –10 dBm and the input third order intercept (IP3) performance of the system is approximately 0 dBm (see Figure
18).
TYPICAL PERFORMANCE OVER TEMPERATURE
Figures 19–26 show the device performance over temperature.
Figure 17. Signal Levels versus
RF Input Signal Level
10
0
IF Output
POWER (dBm)
–10
–20
Limiter
Input
–30
RF Input
at Transformer
Input
Mixer Output
Mixer
Input
–40
IF Input
–50
fRF = 50 MHz
fLO = 50.455 MHz; LO Level = –10 dBm
See Figure 15
–60
–70
–80
–70
–60
–50
–40
–30
–20
–10
0
RF INPUT SIGNAL LEVEL (dBm)
Page 11 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
Figure 18. 1.0 dB Compression Point and Input
Third Order Intercept Point versus Input Power
MIXER IF OUTPUT LEVEL (dBm)
20
1.0 dB Compression
Point = –11 dBm
VCC = 3.0 Vdc
fRF1 = 50 MHz
fRF2 = 50.01 MHz
fLO = 50.455 MHz
PLO = –10 dBm
See Figure 15
0
IP3 = –0.5 dBm
–20
–40
–60
–80
–60
–40
–20
0
20
RF INPUT POWER (dBm)
TYPICAL PERFORMANCE OVER TEMPERATURE
Figure 19. Supply Current, IVEE1
versus Signal Input Level
Figure 20. Supply Current, IVEE2
versus Ambient Temperature
0.35
4.5
4.0
3.5
VCC = 3.0 Vdc
fc = 50 MHz
fdev = ±4.0 kHz
IVEE2 , SUPPLY CURRENT (mA)
IVEE1, SUPPLY CURRENT (mA)
5.0
3.0
2.5
TA = 85°C
2.0
1.5
1.0
0.5
0
–120
TA = 25°C
VCC = 3.0 Vdc
0.3
0.25
TA = –40°C
0.2
–105
–90
–75
–60
–45
–30
–15
0
SIGNAL INPUT LEVEL (dBm)
Page 12 of 20
–40
–20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
TYPICAL PERFORMANCE OVER TEMPERATURE
Figure 21. Total Supply Current
versus Ambient Temperature
Figure 22. Minimum Supply Voltage
versus Ambient Temperature
3.0
1.75
MINIMUM SUPPLY VOLTAGE (Vdc)
TOTAL SUPPLY CURRENT (mA)
1.8
VCC = 3.0 Vdc
1.7
1.65
1.6
1.55
1.5
1.45
1.4
–20
0
20
40
60
1.5
80
–40
–20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 23. RSSI Current versus
Ambient Temperature and Signal Level
Figure 24. Recovered Audio versus
Ambient Temperature
0.7
60
Vin =
40
0 dBm
–20 dBm
30
–40 dBm
20
–60 dBm
–80 dBm
–100 dBm
10
RECOVERED AUDIO (Vpp )
VCC = 3.0 Vdc
fRF = 50 MHz
50
RSSI CURRENT ( µA)
2.0
1.0
–40
–120 dBm
0
–40
–20
0
20
40
60
80
0.65
0.6
0.55
VCC = 3.0 Vdc
RF In = –50 dBm
fc = 50 MHz
fLO = 50.455 MHz
fdev = –4.0 kHz
0.5
0.45
0.4
100
–40
–20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 25. Demod DC Output Voltage
versus Ambient Temperature
Figure 26. LO Current versus
Ambient Temperature
100
100
1.7
VCC = 3.0 Vdc
RF In = –50 dBm
fc = 50 MHz
fLO = 50.455 MHz
fdev = ±4.0 kHz
1.6
1.5
1.4
1.3
1.2
1.1
VCC = 3.0 Vdc
RF In = –50 dBm
fc = 50 MHz
fLO = 50.455 MHz
fdev = ±4.0 kHz
90
LO CURRENT ( µA)
DEMOD DC OUTPUT VOLTAGE (Vdc)
2.5
80
70
60
1.0
0.9
–40
50
–20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
Page 13 of 20
–40
–20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
Legacy Applications Information
Figure 27. Component Placement View – Circuit Side
100 n
10 n
50 Ω Semi±Rigid Coax
39 p
33
39 p
27 k
82 k
1n
11 p
180 n
150 k
MC13150FTB
150 k
100 n
100 n
1n
1n
1 µ
1n
150 k
100 n
560 k
1n
12 k
+
100 n
10 µ
GND
Page 14 of 20
VCC
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
Legacy Applications Information
Figure 28. Component Placement View – Ground Side
VCC
BW_adj
F_adj
DET_out
GND
455 kHz
Ceramic
Filter
455 kHz
Ceramic
Filter
RSSI
AFT_adj
455 kHz
Ceramic
Filter
455 kHz
Ceramic
Filter
1 µH
83.616 MHz
ENABLE
Xtal
135 nH
LO
Tuning
SMA
LO IN
RF1 IN
RF2 IN
3.8"
Page 15 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
Legacy Applications Information
Figure 29. PCB Circuit Side View
GND
VCC
MC13150
Rev 0 3/95
3.8"
Page 16 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
Legacy Applications Information
Figure 30. PCB Ground Side View
VCC
BW_adj
F_adj
DET_out
GND
455 kHz
Ceramic
Filter
RSSI
AFT_adj
455 kHz
Ceramic
Filter
ENABLE
Xtal
LO
Tuning
LO IN
RF1 IN
RF2 IN
3.8"
Page 17 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
OUTLINE DIMENSIONS
ML13150-A9P
PLASTIC PACKAGE
CASE 977–01
(LQFP–24)
ISSUE O
4X
9
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2 CONTROLLING DIMENSION: MILLIMETER.
3 DATUM PLANE –AB– IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4 DATUMS –T–, –U–, AND –Z– TO BE DETERMINED
AT DATUM PLANE –AB–.
5 DIMENSIONS S AND V TO BE DETERMINED AT
DATUM PLANE –AC–.
6 DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 (0.010) PER SIDE. DIMENSIONS A AND B DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE AB.
7 DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. DAMBAR PROTRUSION SHALL
NOT CAUSE THE D DIMENSION TO EXCEED
0.350 (0.014).
8 MINIMUM SOLDER PLATE THICKNESS SHALL BE
0.0076 (0.0003).
9 EXACT SHAPE OF EACH CORNER IS OPTIONAL.
0.200 (0.008) AB T–U Z
A
A1
24
–T–
DETAIL Y
19
1
18
–U–
V
B
V1
13
6
7
B1
12
–Z–
S1
S
4X
0.200 (0.008) AB T–U Z
DETAIL AD
DIM
A
A1
B
B1
C
D
E
F
G
H
J
K
M
N
P
Q
R
S
S1
V
V1
W
X
MILLIMETERS
MIN
MAX
4.000 BSC
2.000 BSC
4.000 BSC
2.000 BSC
1.400
1.600
0.170
0.270
1.350
1.450
0.170
0.230
0.500 BSC
0.050
0.150
0.090
0.200
0.500
0.700
12 REF
0.090
0.160
0.250 BSC
1°
5°
0.150
0.250
6.000 BSC
3.000 BSC
6.000 BSC
3.000 BSC
0.200 REF
1.000 REF
INCHES
MIN
MAX
0.157 BSC
0.079 BSC
0.157 BSC
0.079 BSC
0.055
0.063
0.007
0.011
0.053
0.057
0.007
0.009
0.020 BSC
0.002
0.006
0.004
0.008
0.020
0.028
12 REF
0.004
0.006
0.010 BSC
1°
5°
0.006
0.010
0.236 BSC
0.118 BSC
0.236 BSC
0.118 BSC
0.008 REF
0.039 REF
–AB–
–AC–
0.080 (0.003) AC
M
TOP & BOTTOM
–T–, –U–, –Z–
J
R
C E
AE
N
AE
F
D
0.080 (0.003)
W
H
K
X
DETAIL AD
Page 18 of 20
Q
GAUGE
PLANE
P
0.250 (0.010)
S
AC T–U
S
Z
S
SECTION AEAE
G
DETAIL Y
www.lansdale.com
Issue A
LANSDALE Semiconductor, Inc.
ML13150
OUTLINE DIMENSIONS
ML13150-B9P
PLASTIC PACKAGE
CASE 873–01
(LQFP–32)
ISSUE A
L
B
24
32
S
D
S
S
H A–B
DETAIL A
V
M
B
-A-,-B-,-DDETAIL A
J
9
1
F
BASE METAL
0.20 (0.008)
L
S
-B-
-A-
D
16
0.20 (0.008) M C A–B
0.05 (0.002) A–B
25
P
B
17
N
8
D
-D-
0.20 (0.008)
M
C A–B
S
D
S
A
0.20 (0.008) M C A–B
0.05 (0.002) A–B
D
S
SECTION B-B
S
VIEW ROTATED 905 CLOCKWISE
S
0.20 (0.008)
M
H A–B
D
S
S
C E
-H-
-CSEATING
PLANE
H
M
G
U
T
R
-HDATUM
PLANE
K
X
Q
DATUM
PLANE
0.01 (0.004)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS
COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE
PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE.
4. DATUMS -A-, -B- AND -D- TO BE DETERMINED AT DATUM
PLANE -H-.
5. DIMENSIONS S AND V TO BE DETERMINED AT SEATING PLANE
-C-.
6. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
ALLOWABLE PROTRUSION IS 0.25 (0.010) PER SIDE.
DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND
ARE DETERMINED AT DATUM PLANE -H-.
7. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON
THE LOWER RADIUS OR THE FOOT.
DETAIL C
Page 19 of 20
DETAIL C
M
www.lansdale.com
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
X
MILLIMETERS
MIN
MAX
7.10
6.95
7.10
6.95
1.60
1.40
0.273 0.373
1.50
1.30
–
0.273
0.80 BSC
0.20
–
0.119 0.197
0.57
0.33
5.6 REF
8°
6°
0.119 0.135
0.40 BSC
5°
10°
0.15
0.25
8.85
9.15
0.15
0.25
5°
11°
8.85
9.15
1.0 REF
INCHES
MIN
MAX
0.274 0.280
0.274 0.280
0.055 0.063
0.010 0.015
0.051 0.059
–
0.010
0.031 BSC
0.008
–
0.005 0.008
0.013 0.022
0.220 REF
8°
6°
0.005 0.005
0.016 BSC
10°
5°
0.006 0.010
0.348 0.360
0.006 0.010
5°
11°
0.348 0.360
0.039 REF
Issue A
LANSDALE Semiconductor, Inc.
ML13150
Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights nor the rights of others. “Typical” parameters which
may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by the customer’s
technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc.
Page 20 of 20
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Issue A