FDD8444 N-Channel PowerTrench® MOSFET 40V, 50A, 5.2mΩ Features Applications RDS(ON) = 4mΩ (Typ), VGS = 10V, ID=50A Automotive Engine Control Qg(10) = 89nC (Typ), VGS=10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/Repetitive Pulse) Distributed Power Architecture and VRMs Qualified to AEC Q101 Primary Switch for 12V Systems A REE I DF M ENTATIO LE N MP LE RoHS Compliant D G S ©2005 Fairchild Semiconductor Corporation FDD8444 Rev A (W) 1 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET December 2005 Symbol VDSS VGS ID Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (VGS=10v) (Note1) 155 A 17.5 A Drain to Source Voltage Continuous (VGS=10v,with RθJA = 52oC/W) Pulsed EAS PD TJ, TSTG Figure 4 Single Pulse Avalanche Energy (Note 2) 535 Power Dissipation 227 W Derate above 25oC 1.52 W/oC Operating and Storage Temperature mJ o -55 to +175 C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 0.66 oC/W 52 oC/W Package Marking and Ordering Information Device Marking FDD8444 Device FDD8444 Package TO-252AA Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 40 - - V - - 1 µA Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 32V VGS = 0V - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VDS = VGS, ID = 250µA 2 2.5 4 V ID = 50A, VGS = 10V - 4 5.2 ID = 50A, VGS = 10V, TJ = 175°C - 7.2 9.4 - 6195 8240 pF - 585 780 pF - 332 500 pF TJ=150°C On Characteristics VGS(th) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance RG Gate Resistance f = 1MHz - 1.9 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 89 116 nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V - 43 56 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 11 14.5 nC Qgs Gate to Source Gate Charge - 23 - nC Qgs2 Gate Charge Threshold to Plateau - 11 - nC Qgd Gate to Drain “Miller” Charge - 20 - nC VDS = 25V, VGS = 0V, f = 1MHz 2 FDD8444 Rev A (W) VDD = 20V ID = 50A Ig = 1.0mA www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings Tc = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 135 ns td(on) Turn-On Delay Time - 12 - ns tr Turn-On Rise Time - 78 - ns td(off) Turn-Off Delay Time - 48 - ns tf Turn-Off Fall Time - 15 - ns toff Turn-Off Time - - 95 ns V VDD = 20V, ID = 50A VGS = 10V, RGS = 2Ω Drain-Source Diode Characteristics ISD=50A - - 1.25 ISD=25A - - 1.0 V Reverse Recovery Time IF= 50A, dIF/dt=100A/µs - - 51 ns Reverse Recovery Charge IF= 50A, dIF/dt=100A/µs - - 59 nC VSD Source to Drain Diode Voltage trr Qrr Notes: 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L=0.67mH, IAS=40A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 3 FDD8444 Rev A (W) www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 180 160 1.0 120 0.8 100 0.6 0.4 0.2 0.0 VGS=10V 140 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 80 CURRENT LIMITED BY PACKAGE 60 40 20 0 25 50 75 100 125 150 0 25 175 50 75 100 125 150 175 o TC , CASE TEMPERATURE( C) o TC , CASE TEMPERATURE( C) Figure 1. Normalized Power Dissipation vs Case Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER Normalized Thermal Impedance, ZθJC 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 -5 -4 10 10 -3 10 -2 -1 10 0 10 1 10 t, Rectangular Pulse Duration (s) 10 Figure 3. Normalized Maximum Transient Thermal Impedance 2000 IDM, PEAK CURRENT (A) TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 1000 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: VGS = 10V 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 10 -2 10 -1 10 t, Rectangular Pulse Duration (s) 0 10 1 10 Figure 4. Peak Current Capability 4 FDD8444 Rev A (W) www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Typical Characteristics 1000 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 10us 100 100us 10 CURRENT LIMITED BY PACKAGE 1 1ms OPERATION IN THIS SINGLE PULSE AREA MAY BE LIMITED BY RDS(ON) TJ = MAXo RATED TC = 25 C 0.1 1 10ms DC 10 O Starting TJ=25 C 10 O Starting TJ=150 C If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.01 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) PULSE DURATION=80µs DUTY CYCLE=0.5% MAX 80 VDD = 5V O TJ = 175 C 60 O TJ = 25 C 40 20 1000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 100 100 ID,DRAIN CURRENT(A) 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) PULSE DURATION =80µS DUTY CYCLE =0.5% MAX VGS=10V 80 5.0V 4.5V 60 O TJ=25 C 40 4.0V 20 O TJ = - 55 C 0 2.0 2.5 3.0 3.5 4.0 4.5 0 0.0 5.0 Figure 7. Transfer Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID=20A PULSE DURATION=80µs DUTY CYCLE=0.5% MAX 10 ON-RESISTANCE (mΩ) 0.9 1.2 1.5 1.8 11 RDS(ON), DRAIN TO SOURCE 0.6 Figure 8. Saturation Characteristics 12 O TJ = 175 C 9 8 7 6 5 4 0.3 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) O TJ = 25 C 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance vs Gate to Source Voltage PULSE DURATION =80µS DUTY CYCLE =0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 50A VGS = 10V -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE( C) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 FDD8444 Rev A (W) 1.6 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Typical Characteristics 1.15 1.2 NORMALIZED GATE THRESHOLD VOLTAGE 1.1 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS=VDS ID =250µA 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -80 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE( C) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature ID =250µA 1.10 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE ( C) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 CAPACITANCE (pF) CISS VGS,GATE TO SOURCE VOLTAGE(V) 10000 f = 1MHz VGS = 0V COSS 1000 CRSS 100 0.1 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 13. Capacitance vs Drain to Source Voltage VDD=15V 8 VDD=20V 7 6 VDD=25V 5 4 3 2 1 0 0 20 40 60 Qg,GATE CHARGE (nC) 80 100 Figure 14. Gate Charge vs Gate to Source Voltage 6 FDD8444 Rev A (W) ID=50A 9 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Typical Characteristics The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 7 FDD8444 Rev A (W) www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET TRADEMARKS