AOD518/AOI518 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS(on) at 10VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial ID (at VGS=10V) 30V 54A RDS(ON) (at VGS=10V) < 8mΩ RDS(ON) (at VGS = 4.5V) < 12mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK TopView TO-251A IPAK D Top View Bottom View Bottom View D D S D D G G S S G G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Units V ±20 V A 96 15 IDSM TA=70°C Maximum 30 42 IDM TA=25°C Continuous Drain Current S D 54 ID TC=100°C G A 12 IAS 25 A Avalanche energy L=0.1mH C EAS 31 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev 1: Mar 2012 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 25 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 50 -55 to 175 Typ 16 41 2.5 www.aosmd.com °C Max 20 50 3 Units °C/W °C/W °C/W Page 1 of 6 AOD518/AOI518 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS，ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=20A µA 5 1.8 0.7 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ 2.2 100 nA 2.6 V 6 8 7.5 10 8.5 12 91 0.7 mΩ mΩ S 1 V 54 A 951 pF 373 pF 62 pF 1.5 2.3 Ω 15.7 22.5 nC 7.5 10.5 nC 2.8 nC Gate Drain Charge 3.2 nC Turn-On DelayTime 6.25 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 2.5 ns 18.5 ns tf Turn-Off Fall Time 4 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 10.2 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 13.6 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Mar 2012 www.aosmd.com Page 2 of 6 AOD518/AOI518 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V 80 VDS=5V 80 7V 5V 4V 60 ID(A) ID (A) 60 40 40 125°C 20 25°C 20 VGS=3.0V 0 0 0 1 2 3 4 0 5 12 Normalized On-Resistance RDS(ON) (mΩ Ω) 2 3 4 5 6 1.6 10 VGS=4.5V 8 6 VGS=10V 4 2 VGS=10V ID=20A 1.4 17 5 2 10 =4.5V 1.2 VGS ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 15 1.0E+02 ID=20A 1.0E+01 12 40 1.0E+00 125°C 9 IS (A) RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 25°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 3 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Mar 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD518/AOI518 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=20A 8 1000 Capacitance (pF) VGS (Volts) Ciss 6 4 2 800 600 400 Coss 200 Crss 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 300 1000.0 10µs 100.0 RDS(ON) 10µs 10.0 100µs DC 1ms 1.0 Power (W) ID (Amps) 5 200 17 5 TJ(Max)=150°C 2 TC=25°C 10 100 TJ(Max)=150°C TC=25°C 0.1 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=T /T D=Ton on/T T TJ,PK =TCC+P +PDM .ZθJC .RθJC J,PK=T DM.Z θJC.R θJC 1 16 12 R RθJC =3°C/W θJC=3°C/W InIndescending descendingorder order D=0.5, D=0.5,0.3, 0.3,0.1, 0.1,0.05, 0.05,0.02, 0.02,0.01, 0.01,single singlepulse pulse 0.1 Single Pulse Single Pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Mar 2012 www.aosmd.com Page 4 of 6 AOD518/AOI518 60 60 50 50 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 20 10 40 30 20 10 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 175 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T /T D=T on TJ,PK=T =TA+P +PDM.Z .ZθJA.R .RθJA T J,PK 1 A DM θJA descendingorder order InIndescending D=0.5,0.3, 0.3,0.1, 0.1,0.05, 0.05,0.02, 0.02,0.01, 0.01,single singlepulse pulse 16 D=0.5, 12 θJA RθJA=64°C/W =50°C/W R θJA 0.1 0.01 Single Pulse Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: Mar 2012 www.aosmd.com Page 5 of 6 AOD518/AOI518 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: Mar 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6