PD -95174 IRG4BC40KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free VCES = 600V VCE(on) typ. = 2.1V G @VGE = 15V, IC = 25A E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 42 25 84 84 10 ±20 15 160 65 -55 to +150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.50 ––– 2 (0.07) 0.77 ––– 80 ––– Units °C/W g (oz) 1 04/23/04 IRG4BC40KPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — Temperature Coeff. of Breakdown Voltage — 0.46 — 2.10 Collector-to-Emitter Saturation Voltage — 2.70 — 2.14 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -13 Forward Transconductance U 7.0 14 — — Zero Gate Voltage Collector Current — — — — Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA 2.6 IC = 25A VGE = 15V — IC = 42A See Fig.2, 5 V — IC = 25A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100 V, IC = 25A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 2000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — 10 Typ. 120 16 51 30 15 140 140 0.62 0.33 0.95 — — — — — — — — — — 30 18 190 150 1.9 13 1600 130 55 Max. Units Conditions 180 IC = 25A 24 nC VCC = 400V See Fig.8 77 VGE = 15V — — TJ = 25°C ns 210 IC = 25A, VCC = 480V 210 VGE = 15V, RG = 10Ω — Energy losses include "tail" — mJ See Fig. 9,10,14 1.4 — µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V — TJ = 150°C, — IC = 25A, VCC = 480V ns — VGE = 15V, RG = 10Ω — Energy losses include "tail" — mJ See Fig. 11,14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by S Repetitive rating; pulse width limited by maximum R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, T Pulse width ≤ 80µs; duty factor ≤ 0.1%. max. junction temperature. ( See fig. 13b ) (See fig. 13a) 2 junction temperature. U Pulse width 5.0µs, single shot. www.irf.com IRG4BC40KPbF 50 F o r b o t h: T ria n g u la r w a v e : D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d 40 C la m p v o lta g e : 8 0 % o f ra te d Load Current (A) P o w e r D is s ip a tio n = 2 8 W 30 S q u a re w a v e : 6 0 % o f ra te d v o lta g e 20 10 Ide a l d io de s A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 150 o C 10 TJ = 25 oC V = 15V 20µs PULSE WIDTH GE 1 0.1 1 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 10 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 T J = 150°C TJ = 25°C 10 V C C = 50V 5µs PULSE WIDTH 1 5 7 9 A 11 VG E , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC40KPbF 5.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 50 40 30 20 10 0 25 50 75 100 125 150 V = 15V 80 us PULSE WIDTH GE IC = 50 A 4.0 3.0 IC = 25 A IC =12.5 A 2.0 1.0 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.50 0.20 0.1 0.10 P DM 0.05 0.02 0.01 0.01 0.00001 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC40KPbF VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 2500 2000 Cies 1500 1000 500 C oes C res 0 1 10 20 VGE , Gate-to-Emitter Voltage (V) 3000 12 8 4 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 10 1.40 1.20 1.00 0 10 20 30 40 RG , Gate Resistance (Ohm) Ω Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 20 40 60 80 100 120 140 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C 1.60 I C = 25A 0.80 0 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 1.80 VCC = 400V I C = 25A 16 0 100 50 RG = 10Ohm Ω VGE = 15V VCC = 480V IC = 50 A IC = 25 A IC = 12.5 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC40KPbF 1000 RG TJ VCC 4.0 VGE = 10Ohm Ω = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 5.0 VGE = 20V T J = 125 oC 100 3.0 2.0 1.0 0.0 SAFE OPERATING AREA 0 10 20 30 40 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 10 50 1 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC40KPbF L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V Q 480V 4 X IC@25°C 480µF 960V R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 9 0% 1 0% S VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4BC40KPbF TO-220AB Package Outline 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 15 ) 1 0 .2 9 (.4 05 ) - B - 3.7 8 (.1 4 9 ) 3.5 4 (.1 3 9 ) 4.69 (.1 8 5 ) 4.20 (.1 6 5 ) - A - 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 6.4 7 (.2 5 5 ) 6.1 0 (.2 4 0 ) 4 1 5 .24 ( .6 0 0 ) 1 4 .84 ( .5 8 4 ) L E A D AS S I G N M E N T S 1 .1 5 (.0 4 5) M IN 1 2 3 1234- 14 .0 9 (.5 5 5 ) 13 .4 7 (.5 3 0 ) 1 .40 ( .0 5 5 ) 1 .15 ( .0 4 5 ) G A T2E- D R A IN - SO U RC E D R A3IN S O U4R- CDE R A IN D R A IN IG B T s , C o P A C K 1234- G A TE C O LLE C TO R E M IT T E R C O LLE C TO R 4 .06 (.1 6 0 ) 3 .55 (.1 4 0 ) 3X 3X LE A D A S S IG N M E N T S H E X F E1T- G A T E 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) 0 .3 6 (.0 1 4 ) 3X M B A M 2 .5 4 (.1 0 0) 2X N O TE S: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 82 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 0.5 5 (.0 22 ) 0.4 6 (.0 18 ) 2 .9 2 (.11 5 ) 2 .6 4 (.10 4 ) 3 O U T LIN E C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information E X AM P L E : T H IS IS A N IR F 1 0 1 0 L OT COD E 1 789 AS S E M B L E D ON W W 1 9 , 1 9 9 7 IN T H E AS S E M B L Y L I N E "C " N o te: "P " in ass em b ly line pos ition indicate s "Le ad-F ree" IN T E R N AT IO N AL R E CT IF I E R L OGO AS S E M B L Y L OT COD E P AR T N U M B E R D AT E C O D E Y E AR 7 = 1 9 9 7 W E E K 19 L IN E C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 8 www.irf.com