M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Rev V5
Applications
Features
• APON
• Typical –34 dBm sensitivity, +6 dBm saturation at 622 Mb/s when used with 0.9
A/W InGaAs PIN.
(Cpd ≤ 0.5 pF, BER 10–10)
• BPON
• ATM/SONET
• Typical differential transimpedance: 65 kΩ
• Fabricated in standard CMOS
• Differential output
• Standard +3.3 Volt supply
• Available in die form only
• Monitor output
• AGC provides dynamic range of 40 dB
• Internal or external bias for photodiode
• PIN or APD sensor
• Same pad layout and die size as M02013/14/15/16
The M02011 is a CMOS transimpedance amplifier with AGC. The AGC gives a wide dynamic range of 40 dB. The
high transimpedance gain of 66 kΩ ensures good sensitivity.
For optimum system performance, the M02011 die should be mounted with a GaAs or InGaAs PIN photodetector
inside a lensed TO-Can or other optical sub-assembly.
The M02011 can either bias the PIN diode from the internal regulator, or use an externally biased PIN diode.
A replica of the average photodiode current is available at the MON pad for photo-alignment and 'Loss of Signal'
monitoring.
Typical Applications Diagram
1 nF
VCC
470 pF
PINK
PINA
Typically
AC-Coupled
to Limiting
Amplifier
DOUT
M02011
Limiting
Amplifier
DOUTB
Monitor Output
Rm
1
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Rev V5
Ordering Information
Part Number
Package
Operating Temperature
M02011-XX*
Waffle Pack
–40 °C to 95 °C
M02011-XX*
Expanded whole wafer on a ring
–40 °C to 95 °C
NOTE:
*For full ordering number please contact sales
Revision History
Revision
Level
Date
V5
Released
May 2015
D (V4)
Released
August 2007
C (V3)
Released
May 2007
Description
Updated logos and page layout. No content changes.
Production release. Revised Absolute Maximum Ratings Table, Table 1-1.
Production release. Increased max operating temperature, updated specifications based on full
device characterization and included information on assembly, IMON and using the device with
externally biased detectors in the Applications Information section.
Pad Configuration
Top Level Diagram
PINK
MON
VCC
3
2
1
12
11
VCC
AGC
DOUT
DOUTGND
10
GND
PINK
DOUT
PINA
DOUTB
AGC
GND
4
PINA
GND
VCC
MON
DOUT
DOUTGND
5
6
7
8
9
Die size ≈ 1090 x 880 µm
2
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Rev V5
1.0 Product Specification
1.1
Absolute Maximum Ratings
These are the absolute maximum ratings at or beyond which the IC can be expected to fail or be damaged.
Reliable operation at these extremes for any length of time is not implied.
Table 1-1.
Absolute Maximum Ratings
Symbol
VCC
TA
TSTG
IIN
Parameter
Rating
Units
Power supply (VCC-GND)
-0.4 to +4
V
Operating ambient
-40 to +95
°C
Storage temperature
-65 to +150
°C
8 (1, 2)
mAPP
-0.4 to +2.0 (2)
V
10
mA
-0.4 to Vcc +0.4
V
10
mA
PINA Input current
VPINA
Maximum input voltage at PINA
IPINK
Maximum average current sourced out of PINK
VPINK, VDout,
VDoutB,VAGC,
VMON
IDout, IDoutB
Maximum input voltage at PINK, Dout, DoutB, AGC and MON
Maximum average current sourced out of Dout and DoutB
NOTES:
1.
Equivalent to 4.9 mA average current.
2.
Do not exceed either the IIN or VPINA rating. PINA damage will result in performance degradation which is difficult to detect.
1.2
Recommended Operating Conditions
Table 1-2.
Recommended Operating Conditions
Symbol
Parameter
VCC
Power supply (VCC – GND)
CPD
Max. Photodiode capacitance (Vr = 1.8 V), for 622 Mbps data rate
TA
Operating ambient temperature
Rating
Units
3.3 ± 10%
V
1.0
pF
–40 to +95
°C
3
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
1.3
Rev V5
DC Characteristics
Table 1-3.
DC Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
VB
Photodiode bias voltage (PINK – PINA)
1.7
2.0
2.2
V
VCM
Common mode output voltage
0.7
1
1.3
V
ICC
Supply current (no loads)
20
28
35
mA
85
100 (1)
—
W
RLOAD
Recommended differential output loading
NOTE:
1.
100Ω is the load presented by the limiting amplifier.
1.4
AC Characteristics
Table 1-4.
AC Characteristics
Symbol
Parameter
Condition
Min.
Typ.(1)
Max.
Units
ROUT
Output impedance (single ended)
30
50
70
W
LFC
Low frequency cutoff (2)
—
13
17
kHz
VD
Differential output voltage
100Ω differential load
—
250
450
mV
Duty cycle distortion (3)
622 Mbps
—
—
80
ps
DJ
Deterministic jitter (includes DCD) (3)
622 Mbps, 223 – 1 PRBS
—
—
120
psPP
PDJ
Pattern Dependant Jitter (at crossing point), 622 Mbps, 223 – 1 PRBS
with no DCD
—
—
55
psPP
Total input RMS noise
DC to 467 MHz (Bessel Filter),
Cin = 0.5 pF
—
50
60
nA
Total input RMS noise
DC to 467 MHz (Bessel Filter),
Cin = 1 pF
—
56
70
nA
–33
–34
—
dBm
DCD
In, rms
PIN_mean_min
Imon_off
Imon_ratio
Imon_error
Optical Sensitivity (4)
Monitor Output Offset
(5)
VMON = 0 to 2V
—
—
1.3
µA
(5)
VMON = 0 to 2V
—
0.7
—
—
(3, 5)
VMON = 0 to 2V
—
—
±2
dB
Monitor Output Gain Ratio
Monitor Output Accuracy
NOTES:
1.
2.
3.
Die designed to operate over an ambient temperature range of –40°C to +85°C, TA and VCC range from 3.0 – 3.6V. Typical values are tested at
TA = 25° C and VCC = 3.3V.
Input –33 dBm, Extinction Ratio = 10, Temp = 25°C.
Input current < 1 mA average.
4.
5.
BER 10–10, PD capacitance = 0.5 pF, Responsivity 0.9 A/W, Extinction Ratio = 10, Temp = 25°C.
Offset and slope adjustment necessary to achieve rated accuracy.
4
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
1.5
Rev V5
Dynamic Characteristics
Table 1-5.
Dynamic Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
kΩ
Transimpedance
G
26.5
32.5
38
• Differential
53
65
76
Bandwidth to –3 dB point @ –33 dBm, 0.9A/W, 0.5 pF PD
450
600
—
Bandwidth to –3 dB point @ –33 dBm, 0.9A/W, 1 pF PD
—
460
—
RC
AGC loop time constant
—
2
—
µs
IAGC
AGC threshold
—
5
—
µAPP
—
—
mA
22
—
dB
BW
• Single ended
IOVL
Maximum functional input current
3.6 (1)
PSRR
Power supply rejection, f < 1 MHz
—
MHz
NOTES:
1. Equivalent to +3.4 dBm input optical power at Extinction Ratio = 10, Responsivity = 1.0 A/W.
5
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
1.6
Rev V5
Typical Performance
VCC = 3.3V, Temperature = 25°C, LIN = 1 nH, unless otherwise stated.
Figure 1-1.
Typical Performance Diagrams 1 of 3
Typical Differential Transimpedance vs. VAGC
Differential Transimpedance (kΩ)
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
VAGC (V)
6
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Rev V5
VCC = 3.3V, Temperature = 25°C, LIN = 1 nH, unless otherwise stated.
Figure 1-2.
Typical Performance Diagrams 2 of 3
M02011 Bandwidth vs . Input Capacitance
3.3V, NOM, L IN = 1nH
750
Bandwidth (MHz)
700
650
T = -40ºC
600
T = 0ºC
T = 27ºC
550
T = 85ºC
T = 110ºC
500
450
400
0.2
0.4
0.6
0.8
1
CIN (pF)
M02011 Bandwidth vs . Temperature
3.3V, NOM, LIN = 1nH
750
Bandwidth (MHz)
700
650
CIN = 0.3pF
600
CIN = 0.5pF
550
CIN = 0.75pF
CIN = 1.0pF
500
450
400
-40
10
60
110
Junction Temperature (ºC)
M02011 Jitter Characteristics vs . IIN
3.3V, NOM, LIN = 1 nH, C IN = 0.5 pF, 622 Mbps
(note: DJ = PDJ + |DCD|)
60
Jitter (ps)
40
20
PDJ psPP
DCD ps
0
DJ psPP
-20
-40
-60
1
10
100
1000
10000
Input Current (μAPP )
7
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Rev V5
VCC = 3.3V, Temperature = 25°C, LIN = 1 nH, unless otherwise stated.
Figure 1-3.
Typical Performance Diagrams 3 of 3
M02011 Imon Characteristics After Calibration
1600
1400
Imon Current (uA)
1200
1000
800
600
400
200
0
0
200
400
600
800
1000
1200
1400
Input Current (uA)
M02011 Imon Error After Calibration
1.20
Imon Error (dB Optical)
1.00
0.80
0.60
0.40
0.20
0.00
-0.20
-0.40
0
1
10
100
1000
10000
Input Current (uA)
8
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Rev V5
2.0 Pin Definitions
Table 2-1.
Pad Description
Die Pad No
Name
Function
1
AGC
Monitor or force AGC voltage
2
VCC
Power pin. Connect to most positive supply
3
PINK
Common PIN input. Connect photo diode cathode here and a 470 pF capacitor to Gnd (1)
4
PINA
Active PIN input. Connect to photo diode anode
5
VCC
Power pin. Connect to most positive supply (only one VCC pad needs to be connected)
6
MON
Analog current source output. Current matched to average photodiode current
7
DOUT
Differential data output (goes low as light increases)
8
DOUTGND
9
GND
Ground pin. Connect to the most negative supply (2)
10
GND
Ground pin. Connect to the most negative supply (2)
11
DOUTGND
12
DOUT
NA
Backside
Ground return for DOUT pad (2)
Ground return for DOUT pad (2)
Differential data output (goes high as light increases)
Backside. Connect to the lowest potential, usually ground
Notes:
1.
Alternatively the photodiode cathode may be connected to a decoupled positive supply, e.g. VCC.
2.
All ground pads are common on the die. Only one ground pad needs to be connected to the TO-Can ground. However, connecting more than one ground
pad to the TO-Can ground, particularly those across the die from each other can improve performance in noisy environments.
9
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Figure 2-1.
Rev V5
Bare Die Layout
2
1
12
11
VCC
AGC
DOUT
DOUTGND
10
3
PINK
GND
4
PINA
GND
VCC
MON
DOUT
DOUTGND
5
6
7
8
9
10
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Rev V5
3.0 Functional Description
3.1
Overview
The M02011 is a CMOS transimpedance amplifier with AGC. The AGC gives a wide dynamic range of 40 dB. The
high transimpedance gain of 66 kΩ ensures good sensitivity.
For optimum system performance, the M02011 die should be mounted with a GaAs or InGaAs PIN photodetector
inside a lensed TO-Can or other optical sub-assembly.
The M02011 can either bias the PIN diode from the internal regulator, or use an externally biased PIN diode.
A replica of the average photodiode current is available at the MON pad for photo-alignment and 'Loss of Signal'
(LOS) monitoring.
Figure 3-1.
M02011 Block Diagram
MON
DC
Restore
PINK
2.6 V
DOUT
Phase
Splitter
PINA
DC Shift
DOUT
1V
AGC
11
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
3.2
General Description
3.2.1
TIA (Transimpedance Amplifier)
Rev V5
The transimpedance amplifier consists of a high gain single-ended CMOS amplifier (TIA), with a feedback resistor.
The feedback creates a virtual earth low impedance at the input and virtually all of the input current passes through
the feedback resistor, defining the voltage at the output. Advanced CMOS design techniques are employed to
maintain the stability of this stage across all input conditions.
An on-chip low dropout linear regulator has been incorporated into the design to give excellent noise rejection up to
several MHz. Higher frequency power supply noise is removed by the external 470 pF decoupling capacitor
connected to PINK.
The circuit is designed for PIN photodiodes in the “grounded cathode” configuration, with the anode connected to
the input of the TIA and the cathode connected to AC ground, such as the provided PINK terminal. Reverse DC
bias is applied to reduce the photodiode capacitance. Avalanche photodiodes can be connected externally to a
higher voltage.
3.2.2
AGC
The M02011 has been designed to operate over the input range of +6 dBm to –34 dBm. This represents a ratio of
1:10000 whereas the acceptable dynamic range of the output is only 1:30 which implies a compression of 333:1 in
the transimpedance. The design uses a MOS transistor operating in the triode region as a “voltage controlled
resistor” to achieve the transimpedance variation.
Another feature of the AGC is that it only operates on signals greater than –26 dBm (@0.9 A/W). This knee in the
gain response is important when setting “signal detect” functions in the following post amplifier. It also aids in active
photodiode alignment.
The AGC pad allows the AGC to be disabled during photodiode alignment by grounding the pad through a low
impedance. The AGC control voltage can be monitored during normal operation at this pad by a high impedance
(>10 MΩ) circuit.
3.2.3
Output Stage
The signal from the TIA enters a phase splitter followed by a DC-shift stage and a pair of voltage follower outputs.
These are designed to drive a differential (100Ω) load. They are stable for driving capacitive loads, such as
interstage filters. Each output has its own GND pad, all four GND pads on the chip should be connected for proper
operation. Since the M02011 exhibits rapid roll-off (3 pole), simple external filtering is sufficient.
3.2.4
Monitor O/P
High impedance output sources a replica average photodiode current for monitoring purposes. This output is
compatible with the DDMI Receive Power Specification (SFP-8472) and MACOM’s range of DDMI controllers.
Ensure that the voltage on VMON is in the range of 0 to 2V. Refer to Figure 4-1.
12
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Rev V5
4.0 Applications Information
4.1
Recommended Pin Diode Connections
Figure 4-1.
Suggested PIN Diode Connection Methods
VCC
1 nF
470 pF
PINK
PINA
DOUT
M02011
DOUTB
Monitor Output
Rm
Recommended Circuit
1 nF
470 pF
VCC
500 Ω
470 pF
Note:
Selection
of
Rm
depends
on
the
maximum
input
current as detailed in
Table 4-1.
DOUT
PINK
PINA
M02011
DOUTB
Monitor Output
Rm
Alternative Circuit - Cathode Connected to VCC
13
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
4.2
Rev V5
Monitor Calibration
To achieve the best monitor accuracy, both the slope and calibrated offset should be used. The offset calibration is
achieved by measuring the dark current from the MON output. The calibrated monitor value is usually determined
by y = mx + b or:
IMON_CALIBRATED = (Slope * IMON_READING) + IMON_OFFSET
Where Slope = 1/Imon_ratio (Table 1-4) = 1/0.7 = 1.43 and
IMON_OFFSET = IINPUT@CAL – (IMON_READING@CAL * Slope)
4.3
Selecting the Monitor Resistor
As described earlier the high impedance monitor output sources a replica average photodiode current for
monitoring purposes. If detected by converting the current to a voltage through an external resistor (Figure 4-1),
ensure that the voltage on VMON is in the range of 0 to 2V. The table below provides suggested values for the
monitor resistor.
Table 4-1.
Selection of Rm for Maximum Input Current
IIN Max (mA)
Optical Power (dBm)
Rm (Ω)
4
+6
500
2
+3
1000
1
0
2000
0.5
–3
4000
14
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
4.4
Rev V5
TO-Can Layout
Figure 4-2.
Typical Layout Diagram with Photodiode Mounted on PINK Capacitor (5 pin TOCAN)
DOUT
DOUTB
1nF
470pF
VCC
MON
NOTES:
Typical application inside of a five lead TO-Can.
Only one of the VCC pads and all of the GND pads need to be connected. The backside must be connected to the lowest potential, usually ground, with conductive
epoxy or a similar die attach material. If a monitor output is not required then a four lead TO-Can may be used.
15
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Figure 4-3.
Rev V5
Typical Layout Diagram with Photodiode Mounted on TOCAN base (5 pin TOCAN)
DOUT
DOUTB
1nF
VCC
470pF
MON
NOTE:
Typical application inside of a five lead TO-Can.
Only one of the VCC pads and all of the GND pads need to be connected. The backside must be connected to the lowest potential, usually ground, with conductive
epoxy or a similar die attach material. If a monitor output is not required then a four lead TO-Can may be used.
4.5
Treatment of PINK
PINK requires bypassing to ground with a capacitor when powering a photo diode. If PINK is not used to bias the
photo diode, then it is not necessary to bypass an unused PINK.
16
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
4.6
Rev V5
T0-Can Assembly Recommendations
Figure 4-4.
TO-Can Assembly Diagram
NOT Recommended Example
PIN
Diode
Capacitor
Wire Bond
470
pF
M02015
Ceramic Shim
Submount
TO Can Leads
(x 4or 5)
TO-CAN Header
Recommended Example
M02015
PIN
Diode
Capacitor
Wire Bond
470
pF
Metal Shim
Ceramic Shim
Submount
TO Can Leads
(x 4or 5)
TO-CAN Header
17
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
4.6.1
Rev V5
Assembly
The M02011 is designed to work with a wirebond inductance of 1 nH ± 0.25 nH. Many existing TO-Can
configurations will not allow wirebond lengths that short, since the PIN diode submount and the TIA die are more
than 1 mm away in the vertical direction, due to the need to have the PIN diode in the correct focal plane. This can
be remedied by raising up the TIA die with a conductive metal shim. This will effectively reduce the bond wire
length. Refer to Figure 4-4 for details.
MACOM recommends ball bonding with a 1 mil (25.4 µm) gold wire. For performance reasons the PINA pad is
smaller than the others and also has less via material connected to it. It therefore requires more care in setting of
the bonding parameters. For the same reason PINA has no ESD protection.
In addition, please refer to the MACOM Product Bulletin (document number 0201x-PBD-002-A). Care must be
taken when selecting chip capacitors, since they must have good low ESR characteristics up to 1.0 GHz. It is also
important that the termination materials of the capacitor be compatible with the attach method used.
For example, Tin/Lead (Pb/Sn) solder finish capacitors are incompatible with silver-filled epoxies. Palladium/Silver
(Pd/Ag) terminations are compatible with silver filled epoxies. Solder can be used only if the substrate thick-film
inks are compatible with Pb/Sn solders.
4.6.2
Recommended Assembly Procedures
For ESD protection the following steps are recommended for TO-Can assembly:
•
Ensure good humidity control in the environment (to help minimize ESD).
•
Consider using additional ionization of the air (also helps minimize ESD).
•
As a minimum, it is best to ensure that the body of the TO-Can header or the ground lead of the header is
grounded through the wire-bonding fixture for the following steps. The wire bonder itself should also be
grounded.
1. Wire bond the ground pad(s) of the die first.
2. Then wire bond the VCC pad to the TO-Can lead.
3. Then wire bond any other pads going to the TO-Can leads (such as DOUT, DOUT and possibly MON)
4. Next wire bond any capacitors inside the TO-Can.
5. Inside the TO-Can, wire bond PINK.
6. The final step is to wire bond PINA.
18
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For further information and support please visit:
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M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
4.7
Rev V5
TIA Use with Externally Biased Detectors
In some applications, MACOM TIAs are used with detectors biased at a voltage greater than available from TIA
PIN cathode supply. This works well if some basic cautions are observed. When turned off, the input to the TIA
exhibits the following I/V characteristic:
Figure 4-5.
TIA Use with Externally Biased Detectors, Powered Off
PINA Unbiased
100
50
0
-800
-600
-400
-200
0
200
400
600
800
1000
1200
µA
-50
-100
-150
-200
-250
-300
mV
19
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
http://www.macom.com/support
M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Rev V5
In the positive direction after about 700 mV, the impedance of the input is relatively high. After the TIA is turned on,
the DC servo and AGC circuits attempt to null any input currents (up to the absolute maximum stated in Table 1-1)
as shown by the I/V curve in Figure 4-6.
Figure 4-6.
TIA Use with Externally Biased Detectors, Powered On
PINA biased
1000
800
600
400
µA
200
0
-300
-200
-100
0
100
200
300
400
500
600
700
-200
-400
-600
-800
-1000
mV
It can be seen that any negative voltage below 200 mV is nulled and that any positive going voltage above the
PINA standing voltage is nulled by the DC servo. The DC servo upper bandwidth varies from part to part, but is
generally at least 30 kHz.
When externally biasing a detector such as an APD where the supply voltage of the APD exceeds that for PINA
Table 1-1, care should be taken to power up the TIA first and to keep the TIA powered up until after the power
supply voltage of the APD is removed. Failure to do this with the TIA unpowered may result in damage to the input
FET gate at PINA. In some cases the damage may be very subtle, in that nearly normal operation may be
experienced with the damage causing slight reductions in bandwidth and corresponding reductions in input
sensitivity.
20
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
http://www.macom.com/support
M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Rev V5
5.0 Die Specification
9c
9b
9a
GND
2 (1)
VCC
–329
–228
3
PINK
–124
–434
4
PINA
124
–434
5 (1)
VCC
329
–228
6
MON
329
–76
7
DOUT
329
76
DOUTGND
329
228
9c (1, 2)
GND
329
360
9b (1, 2)
GND
255
434
9a (1, 2)
GND
124
434
10a (1, 2)
GND
–124
434
10b (1, 2)
GND
–255
434
10c (1, 2)
GND
–329
360
DOUTGND
–329
228
DOUT
–329
76
7
6
MON
VCC
8 (1)
5
DOUTGND
DOUT
DOUT
8
–76
PINA
Y
4
X
–329
AGC
PINK
Pad
AGC
VCC
3
Pad
Number
1
DOUTGND
GND
10a
11
12
1
2
10a
Bare Die Layout
10b
Figure 5-1.
11 (1)
12
Notes:
Process technology: CMOS, Silicon Nitride passivation
Die thickness: 300 µm
Pad metallization: Aluminium
Die size: 880 µm x 1090
Pad opening: 86 µmsq.
Octagonal pad: 70 µm across flat PINA (70 µm x 70 µm)
Pad Centers in µm referenced to center of device
Connect backside bias to ground
NOTES:
1. It is only necessary to bond one VCC pad and one
GND pad. However, bonding one of each pad (if
available) on each side of the die is encouraged
for improved performance in noisy environments.
2. Each location is an acceptable bonding location.
21
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
http://www.macom.com/support
M02011
CMOS Transimpedance Amplifier with AGC
for Fiber Optic Networks up to 622 Mbps
Rev V5
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes
no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and
product descriptions at any time, without notice. MACOM makes no commitment to update the information and
shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its
specifications and product descriptions. No license, express or implied, by estoppel or otherwise, to any
intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL
DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER
INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR
COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE
MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers
using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify
MACOM for any damages resulting from such improper use or sale.
22
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
http://www.macom.com/support