ICE6N70 Product Summary N-Channel Enhancement Mode MOSFET ID TA = 25°C 6A Max V(BR)DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance D G TO-220 Optimized Design For High Performance Power Systems S Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Value Unit Continous Drain Current 6 A TC = 25°C Pulsed Drain Current 18 A TC = 25°C EAS Avalanche Energy, Single Pulse 160 mJ ID = 3A IAR Avalanche Current, Repetitive 3 A Limited by Tjmax MOSFET dv/dt Ruggedness 50 V/ns ID ID, pulse dv/dt Parameter VGS Gate Source Voltage Ptot Power Dissipation Tj, Tstg ±20 ±30 Operating and Storage Temperature Parameter VDS = 480V, ID = 6A, Tj = 125°C Static AC (f>Hz) 73 W -55 to +150 °C 60 Ncm M 3 & 3.5 screws Unit Conditions Mounting Torque Symbol V Conditions Values Min Typ Max TC = 25°C Thermal Characteristics RthJC Thermal Resistance, Junction to Case - - 1.7 RthJA Thermal Resistance, Junction to Ambient - - 68 Tsold Soldering Temperature, Wave Soldering Only Allowed At Leads - - 260 °C/W °C Leaded 1.6mm (0.063in.) from Case for 10s Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS Drain to Source Breakdown Voltage 700 730 - VGS(th) Gate Threshold Voltage 2.1 3 3.9 - 0.1 1 - - 100 - - 100 - 0.65 0.75 - 2.0 - - 4 - IDSS IGSS RDS(on) RGS Zero Gate Voltage Drain Current Gate Source Leakage Current Drain to Source On-State Resistance Gate Resistance V µA nA Ω Ω VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 700V, VGS = 0V, Tj = 25°C VDS = 700V, VGS = 0V, Tj = 150°C VGS = ±20v, VDS = 0V VGS = 10V, ID = 3A, Tj = 25°C VGS = 10V, ID = 3A, Tj = 150°C f = 1 MHz, open drain Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 1 ICE6N70 Symbol Parameter Values Min Typ Max Unit Conditions Dynamic Characteristics Ciss Input Capacitance - 790 - Coss Output Capacitance - 500 - Crss Reverse Transfer Capacitance - 15 - gfs Transconductance - 8 - td(on) Turn-on Delay Time - 10 - Tr Rise Time - 5 - td(off ) Turn-off Delay Time - 67 - tf Fall Time - 4.5 - pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2*ID* RDS, ID = 3A nS VDS = 480V, VGS = 10V, ID = 6A, RG = 4Ω (External) Gate Charge Characteristics Qgs Gate to Source Charge - 5 - Qgd Gate to Drain Charge - 10 - Qg Gate Charge Total - 26 - Vplateau Gate Plateau Voltage - 5.5 - V nC VDS = 480V, ID = 6A, VGS = 0 to 10V Reverse Diode VSD Diode Forward Voltage - 1.0 1.2 V trr Reverse Recovery Time - 300 - ns Qrr Reverse Recovery Charge - 2.9 - µC Irm Peak Reverse Recovery Current - 25 - A VGS = 0V, IS = IF VRR = 480V, IS = IF, diF/dt = 100 A/µS Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 2 ICE6N70 Output Characteristics 16 VGS = 10V to 7V 16 14 12 ID - Drain Current (A) ID - Drain Current (A) 14 6V 10 8 6 5V 4 12 10 8 6 4 2 0 Transfer Characterstics 18 18 TJ = 150°C 2 0 5 10 15 0 20 VDS - Drain to Source Voltage (V) 25°C 0 2 1.8 3.5 1.6 RDS(on) - On State Resistance (Normalized) RDS(on) - On State Resistance (mΩ) 4.0 1.4 VGS = 10V 1.0 0.8 0.6 0.4 8 10 VGS = 10V ID = 3A 3.0 2.5 2.0 1.5 1.0 0.5 0.2 0 6 On Resistance vs Junction Temperature On State Resistance vs Drain Current 2.0 1.2 4 VGS - Gate to Source Voltage (V) 0 2 4 6 8 10 12 14 16 0.0 18 -50 ID - Drain Current (A) -25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 Gate Charge 10 VGS - Gate to Source Voltage (V) 9 8 VDS = 480V ID = 6A 7 6 5 4 3 2 1 0 0 10 20 30 Qg - Total Gate Charge (nC) Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 3 ICE6N70 Gate Threshold Voltage vs. Junction Temperature Capacitance 100000 1.3 10000 1.2 1.1 ID = 250µA 1.0 C - Capacitance (pF) VGS(th) - Gate Threshold Voltage (Normalized) 1.4 0.9 0.8 0.7 0.6 1000 Coss 100 10 Crss 0.5 0.4 -50 0 -25 0 25 50 75 TJ - Junction Temperature (°C) 100 125 150 0 100 1.2 ID - Drain Current (A) ID = 1mA 1.0 0.9 -50 -25 0 25 50 75 100 TJ - Junction Temperature (°C) r(t) - Transit Thermal Resistance (Normalized) 1.00 125 200 300 400 VDS- Drain to Source Voltage (V) 500 600 Single Pulse Tc = 25°C T = 150°C VGS = 10V 10 1.1 0.8 100 Maximum Rate Forward Biased Safe Operating Area Drain to Source Breakdown Voltage vs. Junction Temperature V(BR)DSS - Drain to Source Breakdown Voltage (Normalized) Ciss 10us 100us 1 1ms DC RDS (ON) Limit Package Limit Thermal Limit 0.1 0.01 150 1 10 100 VDS- Drain to Source Voltage (V) 1000 Transient Thermal Response - Junction to Case 0.5 0.2 0.10 0.1 0.05 0.02 Notes: 0.01 PDM Single Pulse t1 0.00 1.0E-06 t2 Duty Cycle, D = 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t - Time (seconds) t1 t2 1.0E-01 1.0E-00 Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 4