Anachip AF9926N N-channel enhancement mode power mosfet Datasheet

AF9926N
N-Channel Enhancement Mode Power MOSFET
„ Features
„ General Description
- Capable of 2.5V Gate Drive
- Low On-resistance
- Low Drive Current
- Surface Mount Package
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
„ Product Summary
BVDSS (V)
20
RDS(ON) (mΩ)
30
ID (A)
6
„ Pin Descriptions
„ Pin Assignments
S1
1
8
D1
Pin Name
Description
G1
2
7
D1
S2
3
6
D2
S1/2
G1/2
D1/2
Source
Gate
Drain
G2
4
5
D2
SO-8
„ Ordering information
Feature
F :MOSFET
A X
9926N X X X
PN
Package
Lead Free
Packing
S: SO-8
Blank : Normal
L : Lead Free Package
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Sep 5, 2005
1/6
AF9926N
N-Channel Enhancement Mode Power MOSFET
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA=25ºC
TA=70ºC
ID
Continuous Drain Current (Note 1)
IDM
Pulsed Drain Current (Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
PD
TSTG
TJ
Rating
20
±12
6
4.8
26
2
0.016
-55 to 150
-55 to 150
TA=25ºC
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient (Note 1)
Maximum
62.5
Max.
Units
ºC/W
„ Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
BVDSS
∆BVDSS /
∆TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
(Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(TJ=25oC)
Drain-Source Leakage Current
(TJ=70oC)
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Units
VGS=0V, ID=250uA
Reference to 25oC,
ID=1mA
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
20
-
-
V
-
0.03
-
V/oC
-
-
-
20
30
45
1.2
-
VDS=20V, VGS=0V
-
-
25
VDS=20V, VGS=0V
-
-
250
VGS=12V
VGS=-12V
ID=6A,
VDS=20V,
VGS=5V
VDS=10V,
ID=1A,
RG=6Ω, VGS=5V
RD=10Ω
VGS=0V,
VDS=20V,
f=1.0MHz
-
23
4.5
7
30
70
40
65
1035
320
150
100
-100
35
7
11
60
140
80
130
-
Min.
-
Typ.
-
Max.
1.54
Unit
V
-
0.78
1.2
V
mΩ
V
S
uA
nA
nC
ns
pF
„ Source-Drain Diode
Symbol
IS
VSD
Parameter
Test Conditions
Continuous Source Current (Body Diode) VD=VG=0V, VS=1.3V
TJ=25ºC, IS=1.7A,
Forward On Voltage (Note 3)
VGS=0V
2
o
Note 1: Surface mounted on 1 in copper pad of FR4 board, 135 C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
2/6
AF9926N
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. RDSON v.s. Junction Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
3/6
AF9926N
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (Continued)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Typical Gate Charge v.s. VGS
Fig 10. Typical Capacitance v.s. VDS
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
4/6
AF9926N
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (Continued)
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
5/6
AF9926N
N-Channel Enhancement Mode Power MOSFET
„ Marking Information
SO-8
( Top View )
8
Lot code:
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Logo
9926 N
AA Y W X
Part Number
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
~
Factory code
„ Package Information
Package Type: SO-8
D
7
6
5
2
3
4
E1
E
8
1
L
DETAIL A
B
C
A1
A
e
θ
DETAIL A
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A
A1
B
C
D
E
E1
L
θ
e
Dimensions In Millimeters
Min.
Nom.
Max.
1.35
1.55
1.75
0.10
0.18
0.25
0.33
0.41
0.51
0.19
0.22
0.25
4.80
4.90
5.00
5.80
6.15
6.50
3.80
3.90
4.00
0.38
0.71
1.27
0o
4o
8o
1.27 TYP.
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
6/6
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