Z ibo Seno Electronic Engineering Co., Ltd. D10XB05-D10XB100 10A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 170A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 · Lead Free Finish/RoHS Complian 3S P A H C · · · · · K M R D Min Max A 24.80 25.20 B 14.70 15.30 C L J E Case: Molded Plastic Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Weight: 6.6 grams (approx.) Marking: Type Number B _ Mechanical Data · · N Dim G 4.00 Nominal D 17.20 17.80 E 0.90 1.10 G 7.30 7.70 H 3.10 Æ 3.40 Æ J 3.30 3.70 K 1.50 1.90 L 9.30 9.70 M 2.50 2.90 N 3.40 3.80 P 4.40 4.80 R 0.60 0.80 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current @ TC= 110°C Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage per element Peak Reverse Current at Rated DC Blocking Voltage @ IF = 5.0A @TC = 25°C @ TC = 125°C I2t Rating for Fusing (t < 8.3ms) (Note 1) Typical Junction Capacitance per Element (Note 2) Typical Thermal Resistance, Junction to Case (Note 3) Operating and Storage Temperature Range Notes: D10XB D10XB D10XB D10XB 40 05 10 20 D10XB D10XB D10XB 60 80 100 Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 10 A IFSM 170 A VFM 1.05 V IR 10 500 mA I2t 120 A 2s Cj 55 pF RqJC 1.4 °C/W Tj, TSTG -65 to +150 °C 1. Non-repetitive, for t > 1.0ms and < 8.3ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink. D10XB05-D10XB100 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. D10XB05-D10XB100 IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 12 10 with heatsink 8 6 4 without heatsink 2 Resistive or Inductive load 0 25 50 75 125 100 150 10 0.1 Pulse width = 300µs 0.01 0 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.4 0.8 1.2 1.6 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) 180 100 Tj = 25°C f = 1MHz Single half-sine-wave (JEDEC method) 160 Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FWD SURGE CURRENT (A) TJ = 25°C 1.0 TJ = 150°C 120 80 40 10 1 0 1 100 10 1 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) 10 1000 TJ = 150°C TJ = 125°C 100 TJ = 100°C 10 1.0 TJ = 25°C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics D10XB05-D10XB100 2 of 2 www.senocn.com Alldatasheet