BCR112... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR112/F/L3 BCR112T/W BCR112U C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2 3 E E1 B1 C2 EHA07174 EHA07184 Type Marking Pin Configuration BCR112 WFs 1=B 2=E 3=C - - - SOT23 BCR112F WFs 1=B 2=E 3=C - - - TSFP-3 BCR112L3 WF 1=B 2=E 3=C - - - TSLP-3-4 BCR112T WFs 1=B 2=E 3=C - - - SC75 BCR112U WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BCR112W WFs 1=B 2=E 3=C 1 - - Package - SOT323 Aug-29-2003 BCR112... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 15 Collector current IC 100 Total power dissipation- Ptot Value 200 BCR112F, TS ≤128°C 250 BCR112L3, TS ≤135°C 250 BCR112T, TS ≤109°C 250 BCR112U, TS ≤118°C 250 BCR112W, TS ≤124°C 250 Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS V mA mW BCR112, TS ≤102°C Junction temperature Unit 150 °C -65 ... 150 Value BCR112 ≤ 240 BCR112F ≤ 90 BCR112L3 ≤ 60 BCR112T ≤ 165 BCR112U ≤ 133 BCR112W ≤ 105 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Aug-29-2003 BCR112... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage 50 - - I CBO - - 100 nA I EBO - - 1.61 mA h FE 20 - - - - - 0.3 V Vi(off) 0.8 - 1.5 Vi(on) 1 - 2.5 V(BR)CBO IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor R1 3.2 4.7 6.2 kΩ Resistor ratio R1/R 2 0.9 1 1.1 - fT - 140 - MHz Ccb - 3 - pF AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 3 Aug-29-2003 BCR112... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 3 10 2 - mA IC h FE 10 2 10 1 10 1 10 0 10 -1 -1 10 10 0 10 1 10 2 mA 10 10 0 0 3 0.1 0.2 0.3 V IC 0.5 VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 3 10 1 mA mA 10 2 IC IC 10 0 10 1 10 -1 10 0 10 -1 0 10 10 1 V 10 10 -2 1 2 Vi(on) 1.2 1.4 1.6 V 2 Vi(off) 4 Aug-29-2003 BCR112... Total power dissipation Ptot = ƒ(TS) BCR112 Total power dissipation Ptot = ƒ(TS) BCR112F 300 300 mW 200 P tot P tot mW 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 20 40 60 80 100 TS 150 TS Total power dissipation Ptot = ƒ(TS) BCR112L3 Total power dissipation Ptot = ƒ(TS) BCR112T 300 300 mW mW 200 Ptot Ptot 120 °C 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 TS 20 40 60 80 100 120 °C 150 TS 5 Aug-29-2003 BCR112... Total power dissipation Ptot = ƒ(TS) BCR112U Total power dissipation Ptot = ƒ(TS) BCR112W 300 300 mW 200 P tot P tot mW 200 150 150 100 100 50 50 0 0 20 40 60 80 120 °C 100 0 0 150 20 40 60 80 120 °C 100 TS 150 TS Permissible Pulse Load RthJS = ƒ(tp ) BCR112 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR112 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 Aug-29-2003 BCR112... Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BCR112F Ptotmax/P totDC = ƒ(tp) BCR112F 10 2 10 3 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 -1 -6 10 P totmax/P totDC RthJS K/W 10 -5 10 -4 10 -3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s tp Permissible Pulse Load BCR112L3 Ptotmax/P totDC = ƒ(tp) BCR112L3 10 0 10 3 Ptotmax/ PtotDC RthJS 10 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -7 10 0 tp Permissible Puls Load RthJS = ƒ (tp) 10 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2 10 1 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 7 Aug-29-2003 BCR112... Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BCR112T Ptotmax/P totDC = ƒ(tp) BCR112T 10 3 10 3 P totmax / P totDC K/W RthJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 1 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 0 tp Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BCR112U Ptotmax/P totDC = ƒ(tp) BCR112U 10 3 10 3 2 RthJS 10 Ptotmax / PtotDC K/W 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 8 Aug-29-2003 BCR112... Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BCR112W Ptotmax/P totDC = ƒ(tp) BCR112W 10 3 10 3 P totmax / P totDC K/W R thJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 9 Aug-29-2003