DMTH6004SPS Green 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI Product Summary INFORMATION ADVANCED INFORMATION ADVANCED BVDSS Features ID Max TC = +25°C (Note 9) RDS(ON) Max 3.1mΩ @ VGS = 10V 60V 100A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable And Robust End Application Low RDS(ON) – Minimizes Power Losses Low Qg – Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH6004SPSQ) Mechanical Data Applications DC Motor Control Synchronous Rectification DC/DC Converters Case: POWERDI®5060-8 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) POWERDI®5060-8 Pin1 Top View Bottom View Internal Schematic S D S D S D G D Top View Pin Configuration Ordering Information (Note 4) Part Number DMTH6004SPS-13 Notes: Case POWERDI®5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer’s Marking H6004SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 14 = 2014) WW = Week (01 to 53) H6004SS YY WW S S S G POWERDI is a registered trademark of Diodes Incorporated. DMTH6004SPS Document number: DS37353 Rev. 5 - 2 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6004SPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TC = +25°C (Note 9) TC = +100°C INFORMATION ADVANCED INFORMATION ADVANCED Continuous Drain Current (Note 5) Continuous Drain Current (Note 6) Value 60 ±20 25 21 ID A 100 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.2mH Avalanche Energy, L = 0.2mH Unit V V A IS IDM IAS EAS 100 100 200 45 200 A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 2.1 47 167 0.9 -55 to +175 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25°C TC = +25°C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 48V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 2 — — — 2.5 0.9 4 3.1 1.2 V mΩ V VDS = VGS, ID = 250μA VGS = 10V, ID = 50A VGS = 0V, IS = 20A Ciss Coss Crss Rg Qg Qgs Qgd 4556 1383 105.2 0.66 95.4 21.6 20.4 13.2 11.7 31 12 50.5 — — — — — — — — — — — — pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 30V, ID = 90A, VGS = 10V tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — ns VDD = 30V, VGS = 10V, ID = 90A, RG = 3.5Ω QRR — 80.8 — ns nC Test Condition IF = 50A, di/dt = 100A/μs 5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady state. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. DMTH6004SPS Document number: DS37353 Rev. 5 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6004SPS 200.0 30 180.0 VDS= 5.0V VGS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 140.0 VGS = 6.0V 120.0 VGS = 10.0V 100.0 VGS = 4.5V 80.0 60.0 VGS = 4.0V 40.0 20 15 TA = 85oC TA = 150oC 10 TA = 25oC TA = 125oC TA = -55oC VGS = 3.5V 0.0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 5 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristic 6 10 5.00 9 VGS = 10.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 4.00 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) TA = 175oC 5 20.0 3.00 2.00 8 7 6 5 ID = 90A 4 3 2 1.00 1 0 0.00 2 0 30 60 90 120 150 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs Drain Current and Gate Voltage 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 2.2 VGS = 10V 0.007 0.006 TA = 125oC TA = 150oC TA = 175oC 0.005 0.004 0.003 0.002 TA = 0.001 -55oC TA = 25oC TA = 85oC 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.008 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) INFORMATION ADVANCED INFORMATION ADVANCED 160.0 25 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs Drain Current and Temperature DMTH6004SPS Document number: DS37353 Rev. 5 - 2 3 of 7 www.diodes.com 2 1.8 VGS = 10V, ID = 90A 1.6 1.4 1.2 VGS = 20V, ID = 100A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6 On-Resistance Variation with Temperature November 2015 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 3 0.008 0.007 0.006 0.005 VGS = 10V, ID = 90A 0.004 0.003 VGS = 20V, ID = 100A 0.002 0.001 2.5 ID = 1mA 2 ID = 250µA 1.5 1 0.5 0 -50 -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7 On-Resistance Variation with Temperature -25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) 175 Figure 8 Gate Threshold Variation vs Temperature 10000 150 CT, JUNCTION CAPACITANCE (pF) Ciss 120 IS, SOURCE CURRENT (A) 90 TA = 175oC 60 TA = TA = TA = 85oC 150oC TA = 25oC 125oC TA = -55oC 30 Coss 1000 Crss 100 f=1MHz 10 0 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 40 1000 10 RDS(on) Limited PW = 1µs 8 ID , DRAIN CURRENT (A) 100 6 VGS (V) INFORMATION ADVANCED INFORMATION ADVANCED DMTH6004SPS 4 VDS=30V, ID=90A 2 PW = 1s PW = 100ms PW = 10ms 10 PW = 1ms PW = 100µs 1 TJ (m ax ) = 175°C TC = 25°C V GS = 10V Single Pulse .1 DUT on Infinite Heatsink 0 0 10 20 30 40 50 60 70 Qg (nC) Figure 11. Gate Charge DMTH6004SPS Document number: DS37353 Rev. 5 - 2 80 90 100 4 of 7 www.diodes.com .1 10 1 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 November 2015 © Diodes Incorporated DMTH6004SPS r(t), TRANSIENT THERMAL RESISTANCE INFORMATION ADVANCED INFORMATION ADVANCED 1 D=0.9 D=0.7 D=0.5 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t)=r(t) * RθJC RθJC=0.9℃/W Duty Cycle, D=t1/t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMTH6004SPS Document number: DS37353 Rev. 5 - 2 5 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6004SPS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. INFORMATION ADVANCED INFORMATION ADVANCED POWERDI®5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G POWERDI®5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10° 12° 11° Θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWERDI®5060-8 8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMTH6004SPS Document number: DS37353 Rev. 5 - 2 G Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 Y(4x) 6 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6004SPS IMPORTANT NOTICE INFORMATION ADVANCED INFORMATION ADVANCED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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