InterFET IFN146 Dual n-channel silicon junction field-effect transistor Datasheet

Databook.fxp 1/13/99 2:09 PM Page D-5
D-5
01/99
IFN146
Dual N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise Audio Amplifier
¥ Equivalent to Japanese 2SK146
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
At 25°C free air temperature:
IFN146
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
IDSS
Typ
Process NJ450
Max
– 40
– 0.3
– 40 V
10 mA
375 mW
3 mW/°C
– 65°C to 200°C
Unit
Test Conditions
V
IG = – 1 µA, VDS = ØV
–1
nA
VGS = – 30V, VDS = ØV
–1
µA
VGS = – 30V, VDS = ØV
– 1.2
V
VDS = 10V, ID = 1 µA
30
mA
VDS = 10V, VGS = ØV
mS
VDS = 10V, VGS = ØV
IDSS = 5 mA
f = 1 kHz
TA = 150°C
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
gfs
Common Source Input Capacitance
Ciss
75
pF
VDS = 10V, VGS = ØV
f = 1 kHz
Common Source Reverse
Transfer Capacitance
Crss
15
pF
VDS = 10V, ID = ØA
f = 1 kHz
Noise Figure
NF
dB
VDS = 10V, ID = 5 mA
RG = 100Ω
f = 1 kHz
Differential Gate Source Voltage
|VGS1 – VGS2|
mV
VDS = 10V, ID = 5 mA
30
TOÐ71 Package
Pin Configuration
Dimensions in Inches (mm)
1 Source, 2 Gate, 3 Drain,
5 Source, 6 Gate, 7 Drain
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