NTE NTE47 Silicon npn transistor high gain, low noise amp Datasheet

NTE47
Silicon NPN Transistor
High Gain, Low Noise Amp
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W
Note 1 RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 2
45
–
–
V
Colletor–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
45
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
6.5
–
–
V
–
1.0
50
nA
Collector Cutoff Current
ICBO
VCB = 30V, IE = 0
hFE
VCE = 5V, IC = 10µA
400
580
–
VCE = 5V, IC = 100µA
500
850
–
VCE = 5V, IC = 1mA
500
1100
–
VCE = 5V, IC = 10mA
500
1150
–
IC = 10mA, IB = 0.5mA
–
–
0.2
V
IC = 50mA, IB = 0.5mA
–
0.08
0.3
V
VCE = 5V, IC = 1mA
–
0.6
0.7
V
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
VCE(sat)
VBE(on)
Note 2 Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Electrical Characteristics: (TA = +25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
100
160
–
MHz
VCB = 5V, IE = 0, f = 1MHz
–
1.7
3.0
pF
VCE = 5V, IC = 100µA, RS = 10kΩ,
f = 10Hz to 15.7MHz
–
0.5
1.5
dB
VCE = 5V, IC = 100µA, RS = 1.0kΩ,
f = 100Hz
–
4.0
–
dB
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capaciatnce
fT
Cobo
Noise Figure
NF
VCE = 5V, IC = 1mA, f = 100MHz
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max