Transistors SMD Type NPN Transistors BCW31~BCW33 (KCW31~KCW33) SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Low voltage (32 V). 1 0.55 ● Low current (100 mA) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 ● PNP complements: BCW29 and BCW30. +0.02 0.15 -0.02 +0.2 1.1 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 32 Collector - Emitter Voltage VCEO 32 Emitter - Base Voltage Unit V VEBO 5 Collector Current - Continuous IC 100 Peak Collector Current ICM 200 Peak Base Current IBM 200 Collector Power Dissipation PC 250 mW Rthja 500 K/W Thermal Resistance From Junction to Ambient (Note.1) Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 mA ℃ Note.1: Transistor mounted on an FR4 printed-circuit. www.kexin.com.cn 1 Transistors SMD Type NPN Transistors BCW31~BCW33 (KCW31~KCW33) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 32 Collector- emitter breakdown voltage VCEO Ic= 2 mA， IB= 0 32 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO Emitter cut-off current IEBO Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base - emitter voltage DC current gain VBE Unit V 100 nA VCB= 32 V , IE= 0,TJ=100℃ 10 uA VEB= 5V , IC=0 100 nA IC=10 mA, IB=0.5mA 120 IC=50 mA, IB=2.5mA 210 IC=10 mA, IB=0.5mA 750 IC=50 mA, IB=2.5mA 850 VCE= 5V, IC= 2mA 550 VCE= 5V, IC= 10uA 250 mV 700 VCE= 5V, IC= 2mA BCW32 150 270 hFE BCW31 BCW33 110 220 200 450 420 Collector output capacitance Cc VCB= 10V,IE=Ie=0,f=10MHz Noise figure NF IC = 200 u A; VCE = 5 V; RS = 2kΩ;f = 1 kHz; B = 200 Hz Transition frequency fT VCE= 5V, IC= 10mA,f=100MHz ■ Classification of hfe(2) Type BCW31 BCW32 BCW33 Range 110-220 200-450 420-800 Marking D1* D2* D3* www.kexin.com.cn Max 90 BCW33 DC current gain Typ VCB= 32 V , IE= 0 BCW31 BCW32 2 Min 800 2.5 pF 10 100 dB MHz