DISCRETE SEMICONDUCTORS DATA SHEET BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520; BFG520/X; BFG520/XR PINNING • High power gain PIN • Low noise figure DESCRIPTION fpage 4 3 2 BFG520 (Fig.1) Code: N36 • High transition frequency 1 collector • Gold metallization ensures excellent reliability. 2 base 1 3 emitter Top view 4 emitter DESCRIPTION BFG520/X (Fig.1) Code: N42 NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. 1 collector 2 emitter 3 base 4 emitter The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes. MSB014 Fig.1 SOT143B. handbook, 2 columns 3 4 BFG520/XR (Fig.2) Code: N48 1 collector 2 emitter 3 base 4 emitter 2 1 Top view MSB035 Fig.2 SOT143R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage − − 20 V VCEO collector-emitter voltage open base − − 15 V Ic DC collector current − − 70 mA mW open emitter Ptot total power dissipation up to Ts = 88 °C; note 1 − − 300 hFE DC current gain IC = 20 mA; VCE = 6 V; Tj = 25 °C 60 120 250 Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.3 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 19 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C − 13 − dB S212 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 17 18 − dB F noise figure Γs = Γopt ; Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 1.1 1.6 dB Γs = Γopt ; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 1.6 2.1 dB Γs = Γopt ; IC = 5 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 1.9 − dB September 1995 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation up to Ts = 88 °C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 88 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 3 THERMAL RESISTANCE 290 K/W Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. ICBO collector cut-off current IE = 0; VCB = 6 V − − 50 UNIT nA hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1 − pF Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz − 0.6 − pF Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.3 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain (note 1) IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 19 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C − 13 − dB S212 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 17 18 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 1.1 1.6 dB Γs = Γopt; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 1.6 2.1 dB Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C − 1.9 − dB PL1 output power at 1 dB gain compression IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C − 17 − dBm ITO third order intercept point note 2 − 26 − dBm Vo output voltage note 3 − 275 − mV d2 second order intermodulation distortion IC = 20 mA; VCE = 6 V; Vo = 75 mV; Tamb = 25 °C; f(p+q) = 810 MHz − −50 − dB Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz September 1995 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR MRA670-1 400 MRA671 250 handbook, halfpage handbook, halfpage Ptot (mW) hFE 200 300 150 200 100 100 50 0 10−2 0 0 50 100 150 Ts (oC) 200 10−1 1 10 IC (mA) 102 VCE = 6 V; Tj = 25 °C. Fig.4 Fig.3 Power derating curve. MRA672 0.6 DC current gain as a function of collector current. MRA673 12 handbook, halfpage handbook, halfpage Cre (pF) fT (GHz) 0.4 8 VCE = 6 V VCE = 3 V 0.2 4 0 10−1 0 0 4 8 VCB (V) 12 Fig.6 Feedback capacitance as a function of collector-base voltage. September 1995 10 IC (mA) 102 f = 1 GHz; Tamb = 25 °C. IC = 0; f = 1 MHz. Fig.5 1 5 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR In Figs 7 to 10, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. handbook, halfpage handbook, halfpage gain (dB) gain (dB) Gmax 20 MSG 20 MRA675 25 MRA674 25 GUM 15 15 Gmax MSG GUM 10 10 5 5 0 0 0 0 10 20 IC (mA) 10 20 30 IC (mA) 30 VCE = 6 V; f = 900 MHz; Tamb = 25 °C. VCE = 6 V; f = 2 GHz; Tamb = 25 °C. Fig.7 Gain as a function of collector current. Fig.8 Gain as a function of collector current. MRA676 MRA677 50 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) GUM 40 40 GUM MSG 30 30 MSG 20 20 Gmax Gmax 10 0 10 102 103 f (MHz) 10 0 10 104 103 f (MHz) 104 IC = 20 mA; VCE = 6 V; Tamb = 25 °C. IC = 5 mA; VCE = 6 V; Tamb = 25 °C. Fig.9 Gain as a function of frequency. September 1995 102 Fig.10 Gain as a function of frequency. 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR MEA975 −20 dim MEA974 −20 d2 handbook, halfpage handbook, halfpage (dB) −30 (dB) −30 −40 −40 −50 −50 −60 −60 −70 10 0 20 30 40 −70 50 IC (mA) Fig.11 Intermodulation distortion as a function of collector current. MRA682 5 handbook, halfpage Fmin f = 900 MHz (dB) 4 1000 MHz 10 0 20 30 40 50 IC (mA) Fig.12 Second order intermodulation distortion as a function of collector current. MRA683 20 Gass handbook, halfpage (dB) 15 (dB) 4 5 Fmin IC = 5 mA 20 mA 20 Gass (dB) 15 Gass Gass 2000 MHz 3 10 3 10 5 2 5 2000 MHz 2 1000 MHz 1 Fmin 20 mA 0 900 MHz 1 Fmin 0 5 mA 500 MHz 0 1 10 IC (mA) −5 102 0 102 V CE = 6 V; Tamb = 25 °C. f (MHz) −5 104 VCE = 6 V; Tamb = 25 °C. Fig.13 Minimum noise figure and associated available gain as functions of collector current. September 1995 103 Fig.14 Minimum noise figure and associated available gain as functions of frequency. 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistor handbook, full pagewidth BFG520; BFG520/X; BFG520/XR stability circle 90° 1.0 1 135° 0.8 45° 2 0.5 pot. unst. region 0.6 Fmin = 1. 1 dB 0.2 0.4 5 ΓOPT 180° 0.2 0 0.5 1 0.2 2 5 0° F = 1.5 dB 0 F = 2 dB 5 0.2 F = 3 dB 0.5 −135° 2 −45° 1 MRA684 1.0 −90° IC = 5 mA; VCE = 6 V; f = 900 MHz; Zo = 50 Ω. Fig.15 Noise circle figure. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 F = 3 dB F = 2.5 dB F = 2 dB ΓOPT 0.2 Gmax = 13 dB 180° 0 0.4 5 0.2 Fmin = 1. 9 dB ΓMS 0.2 0.5 1 2 5 0° 0 G = 12 dB 0.2 G = 11 dB 5 G = 10 dB −135° 0.5 2 −45° 1 MRA685 −90° IC = 5 mA; VCE = 6 V; f = 2 GHz; Zo = 50 Ω. Fig.16 Noise circle figure. September 1995 8 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 3 GHz 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 5 0.2 0.5 −135° 2 −45° 1 MRA678 −90° IC = 20 mA; VCE = 6 V. Zo = 50 Ω. Fig.17 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 135° 45° 40 MHz 3 GHz 180° 50 40 30 20 0° 10 −135° −45° −90° MRA679 IC = 20 mA; VCE = 6 V. Fig.18 Common emitter forward transmission coefficient (S21). September 1995 9 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.25 0.20 0.15 0.10 0° 0.05 −135° −45° −90° MRA680 IC = 20 mA; VCE = 6 V. Fig.19 Common emitter reverse transmission coefficient (S12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 3 GHz 0.2 −135° 0.5 5 2 −45° 1 MRA681 −90° IC = 20 mA; VCE = 6 V. Zo = 50 Ω. Fig.20 Common emitter output reflection coefficient (S22). September 1995 10 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B September 1995 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR Plastic surface mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.55 0.25 0.45 0.25 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-03-10 SOT143R September 1995 EUROPEAN PROJECTION 12 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 13