AP01N40J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ 100% Avalanche Rated
▼ Fast Switching Performance
BVDSS
400V
RDS(ON)
16Ω
ID
0.5A
G
▼ Simple Drive Requirement
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
TO-251(J)
S
The TO-251 package is widely preferred for commercial-industrial
through-hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
0.5
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
0.4
A
2
A
17.4
W
0.14
W/℃
0.5
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
7.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
201018072-1/4
AP01N40J
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Min.
Typ.
VGS=0V, ID=1mA
400
-
-
V
VGS=10V, ID=0.5A
-
-
16
Ω
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=0.5A
-
0.5
-
S
VDS=400V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=320V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=1A
-
2.9
4.6
nC
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
3
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=320V
-
0.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
0.6
-
nC
3
td(on)
Turn-on Delay Time
VDD=200V
-
7.7
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
23
-
ns
tf
Fall Time
RD=200Ω
-
73
-
ns
Ciss
Input Capacitance
VGS=0V
-
76
125
pF
Coss
Output Capacitance
VDS=25V
-
11
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Min.
Typ.
IS=2A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=1A, VGS=0V
-
260
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
460
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP01N40J
0.6
1.2
0.8
V G = 6.0 V
o
ID , Drain Current (A)
T C =25 C
0.6
0.4
0.4
V G = 6.0 V
0.3
0.2
0.1
0.2
0
0
0
4
8
12
16
20
0
24
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =0.5A
V G =10V
Normalized RDS(ON)
1.1
Normalized BVDSS (V)
10V
9.0V
8.0V
7.0V
T C =150 o C
0.5
ID , Drain Current (A)
1
10V
9.0V
8.0V
7.0V
1
2
1
0.9
0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2.4
10
T j = 150 o C
VGS(th) (V)
IS (A)
2
T j = 25 o C
1
1.6
1.2
0.8
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP01N40J
I D =1A
V DS =320V
C iss
12
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
100
16
8
C oss
10
C rss
4
1
0
0
1
2
3
1
4
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
ID (A)
1
100us
1ms
0.1
T c =25 o C
Single Pulse
10ms
100ms
DC
0.01
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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