DG411HS, DG412HS, DG413HS Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG411HS series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 µW) with high speed (tON: 68 ns), the DG411HS family is ideally suited for portable and battery powered industrial and military applications. • • • • • • • To achieve high-voltage ratings and superior switching performance, the DG411HS series was built on Vishay Siliconix’s high voltage silicon gate process. An epitaxial layer prevents latchup. 44 V supply max. rating ± 15 V analog signal range On-resistance - RDS(on): 25 Fast switching - tON: 68 ns Ultra low power - PD: 0.35 µW TTL, CMOS compatible Single supply capability BENEFITS • • • • Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off. The DG411HS and DG412HS respond to opposite control logic as shown in the Truth Table. The DG413HS has two normally open and two normally closed switches. Widest dynamic range Low signal rrrors and distortion Break-before-make switching action Simple interfacing APPLICATIONS • • • • • Precision automatic test equipment Precision data acquisition Communication systems Battery powered systems Computer peripherals FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG411HS DG411HS QFN16 DG411HS Dual-In-Line and SOIC LCC D1 IN1 IN2 D2 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 S1 1 V+ V- 2 VGND S4 4 13 5 12 6 11 VL S3 D4 7 10 D3 IN4 8 9 IN3 16 GND S4 15 14 Key 13 3 4 12 S2 11 V+ 10 VL 9 5 Top View D1 IN1 NC IN2 D2 6 7 8 S3 3 2 1 20 19 S1 4 18 S2 V- 5 17 V+ NC 6 16 NC GND 7 15 VL S4 8 14 S3 9 10 11 12 13 D4 IN4 IN3 D3 D4 IN4 NC IN3 D3 Top View Top View TRUTH TABLE Logic DG411HS DG412HS 0 ON OFF 1 OFF ON * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 72053 S11-0179-Rev. C, 07-Feb-11 www.vishay.com 1 DG411HS, DG412HS, DG413HS Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG413HS DG413HS DG413HS QFN16 Dual-In-Line and SOIC LCC D1 IN1 IN2 D2 Key IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 S1 1 12 S2 V- 4 13 V+ V- 2 11 V+ GND 5 12 VL GND 3 10 VL S4 6 11 S3 S4 9 S3 D4 7 10 D3 IN4 8 9 IN3 16 15 14 6 7 8 D4 IN4 IN3 D3 Top View Top View 3 13 4 5 D1 IN1 NC 2 1 IN2 20 D2 19 S1 4 18 S2 V- 5 17 V+ NC 6 16 NC GND 7 15 VL S4 8 14 S3 9 D4 10 11 12 IN4 NC IN3 13 D3 Top View TRUTH TABLE Logic SW1, SW4 SW2, SW3 0 OFF ON 1 ON OFF ORDERING INFORMATION Temp. Range DG411HS, DG412HS Package 16-Pin Plastic DIP - 40 °C to 85 °C 16-Pin Narrow SOIC 16-Pin QFN 4 x 4 mm Part Number DG411HSDJ DG411HSDJ-E3 DG412HSDJ DG412HSDJ-E3 DG411HSDY DG411HSDY-E3 DG411HSDY-T1 DG411HSDY-T1-E3 DG412HSDY DG412HSDY-E3 DG412HSDY-T1 DG412HSDY-T1-E3 DG411HSDN-T1-E4 DG412HSDN-T1-E4 DG413HS - 40 °C to 85 °C www.vishay.com 2 16-Pin Plastic DIP DG413HSDJ DG413HSDJ-E3 16-Pin Narrow SOIC DG413HSDY DG413HSDY-E3 DG413HSDY-T1 DG413HSDY-T1-E3 16-Pin QFN 4 x 4 mm DG413HSDN-T1-E4 Document Number: 72053 S11-0179-Rev. C, 07-Feb-11 DG411HS, DG412HS, DG413HS Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit V+ to V- Unit 44 GND to V- 25 V (GND - 0.3) to (V+) + 0.3 VL (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first Digital Inputsa, VS, VD Continuous Current (Any terminal) 30 Peak Current, S or D (Pulsed 1 ms, 10 % duty cycle) 100 Storage Temperature Power Dissipation (Package)b mA (AK, AZ Suffix) - 65 to 150 (DJ, DY, DN Suffix) - 65 to 125 16-Pin Plastic DIPc 470 16-Pin Narrow SOICd 600 16-Pin CerDIPe 900 LCC-20e 900 16-Pin (4 x 4 mm) QFNf 1880 °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/°C above 25 °C. d. Derate 7.6 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. f. Derate 23.5 mW/°C above 70 °C. SPECIFICATIONSa Parameter Symbol Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b V+ = 13.5 V, V- = - 13.5 V IS = - 10 mA, VD = ± 8.5 V Room Full 25 Room Full ± 0.1 - 0.25 - 20 0.25 20 - 0.25 -5 0.25 5 Room Full ± 0.1 - 0.25 - 20 0.25 20 - 0.25 -5 0.25 5 A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d 15 - 15 Max.d Unit 15 V 35 45 Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Current VANALOG RDS(on) IS(off) ID(off) Full V+ = 16.5 V, V- = - 16.5 V VD = ± 15.5 mA, VS = ± 15.5 V - 15 35 45 ID(on) V+ = 16.5 V, V- = - 16.5 V VD = VS = ± 15.5 V Room Full ± 0.1 - 0.4 - 40 0.4 40 - 0.4 - 10 0.4 10 Input Current, VIN Low IIL VIN under test = 0.8 V Full 0.005 - 0.5 0.5 - 0.5 0.5 Input Current, VIN High IIH VIN under test = 2.4 V Full 0.005 - 0.5 0.5 - 0.5 0.5 Input Capacitancee CIN f = 1 MHz Room 5 Turn-On Time tON Room Full 68 105 127 105 116 Turn-Off Time tOFF RL = 300 , CL = 35 pF VS = ± 10 V, see figure 2 Room Full 42 80 94 80 90 Channel On Leakage Current nA Digital Control µA pF Dynamic Characteristics Break-Before-Make Time Delay Charge Injectione Document Number: 72053 S11-0179-Rev. C, 07-Feb-11 tD DG413HS only, VS = 10 V RL = 300 , CL = 35 pF Room 20 Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 22 ns pC www.vishay.com 3 DG411HS, DG412HS, DG413HS Vishay Siliconix SPECIFICATIONSa Parameter Symbol Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b RL = 50 , CL = 5 pF f = 1 MHz Room - 91 Room - 88 Room 12 f = 1 MHz Room 12 A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d Max.d Unit Dynamic Characteristics (Cont’d) Off Isolatione OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) Room 30 Positive Supply Current I+ Room Full 0.0001 Negative Supply Current I- Room Full - 0.0001 Logic Supply Current IL Room Full 0.0001 Room Full - 0.0001 dB pF Power Supplies Ground Current V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V IGND 1 5 1 5 -1 -5 -1 -5 1 5 1 5 -1 -5 µA -1 -5 SPECIFICATIONSa (for Unipolar Supplies) Parameter Symbol Test Conditions Unless Specified V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b V+ = 10.8 V, IS = - 10 mA VD = 3 V, 8 V Room Full 49 Room Hot 95 140 180 140 160 Room Hot 36 70 79 70 74 A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d Max.d Unit 12 12 V 80 100 80 100 Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG RDS(on) Full Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF RL = 300 , CL = 35 pF VS = 8 V, see figure 2 Break-Before-Make Time Delay tD DG413HS only, VS = 8 V RL = 300 , CL = 35 pF Room 60 Charge Injection Q Vg = 6 V, Rg = 0 , CL = 1 nF Room 60 ns pC Power Supplies Positive Supply Current I+ Room Hot 0.0001 Negative Supply Current I- Room Hot - 0.0001 Logic Supply Current IL Room Hot 0.0001 IGND Room Hot - 0.0001 V+ = 13.2 V, VIN = 0 or 5 V Ground Current 1 5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 µA -1 -5 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 72053 S11-0179-Rev. C, 07-Feb-11 DG411HS, DG412HS, DG413HS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 65 300 55 rDS(on) - Drain-Source On-Resistance (Ω) rDS(on) - Drain-Source On-Resistance (Ω) TA = 25 °C ±5V 45 ±8V 35 ± 10 V ± 12 V ± 15 V 25 15 ± 20 V 5 - 20 TA = 25 °C VL = 5 V V+ = 3.0 V VL = 3 V 250 200 V+ = 5.0 V 150 100 V+ = 8.0 V V+ = 12.0 V V+ = 15.0 V 50 V+ = 20.0 V 0 - 15 - 10 -5 0 5 10 15 20 0 2 4 6 VD - Drain Voltage (V) On-Resistance vs. VD and Dual Supply Voltage IS, ID (pA) rDS(on) - Drain-Source On-Resistance (Ω) V+ = + 5 V V - = - 15 V VL = 5 V ID(on) IS(off) ID(off) - 25 - 50 - 75 -10 -5 0 5 10 14 16 18 20 V+ = 15 V V - = - 15 V VL = 5 V 40 35 125 °C 30 85 °C 25 25 °C 20 - 55 °C 15 10 5 - 15 15 VD or V S - Drain or Source Voltage (V) -5 0 5 VD - Drain Voltage (V) Leakage Current vs. Analog Voltage On-Resistance vs. VD and Temperature - 10 10 15 0 75 V+ = 12 V V- = 0 V VL = 5 V 65 - 10 0 125 °C 55 85 °C 45 25 °C 35 LOSS - 20 LOSS, OIRR, XTLAK (dB) rDS(on) - Drain-Source On-Resistance (Ω) 12 45 0 - 100 - 15 10 On-Resistance vs. VD and Unipolar Supply Voltage 50 25 8 VD - Drain Voltage (V) - 55 °C 25 - 30 - 40 - 50 XTALK - 60 - 70 V+ = 15 V V - = - 15 V VL = 5 V RL = 50 Ω OIRR - 80 - 90 15 - 100 - 110 5 0 2 4 6 8 10 VD - Drain Voltage (V) On-Resistance vs. VD and Temperature Document Number: 72053 S11-0179-Rev. C, 07-Feb-11 12 100 K 1M 10 M 100 M 1G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency www.vishay.com 5 DG411HS, DG412HS, DG413HS Vishay Siliconix 100 100 80 80 60 60 Q - Charge Injection (pC) Q - Charge Injection (pC) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 V = ± 15 V 20 V = ± 12 V 0 - 20 - 40 40 0 V = ± 12 V - 20 - 40 - 60 - 60 - 80 - 80 - 100 - 15 - 10 -5 0 5 10 - 100 - 15 15 - 10 -5 0 5 10 V - Drain Voltage (V) VS - Source Voltage (V) Charge Injection vs. Analog Voltage Charge Injection vs. Analog Voltage 140 120 V = ± 15 V 20 15 140 V+ = 15 V V - = - 15 V VL = 5 V V+ = 12 V V- = 0 V VL = 5 V 120 TON/TOFF (ns) TON/TOFF (ns) tON 100 80 tON 60 80 60 tOFF tOFF 40 20 - 55 100 40 - 35 - 15 5 25 45 65 85 105 20 - 55 125 - 35 - 15 Temperature (°C) 5 25 45 65 Temperature (°C) 85 105 125 Switching Time vs. Temperature Switching Time vs. Temperature 100 mA V+ = 15 V V - = - 15 V VL = 5 V 10 mA = 1 SW = 4 SW 1 mA I SUPPLY I+, I100 µA 10 µA IL 1 µA 100 nA 10 nA 10 100 1k 10 k 100 k 1M 10 M f - Frequency (Hz) Supply Current vs. Input Switching Frequency www.vishay.com 6 Document Number: 72053 S11-0179-Rev. C, 07-Feb-11 DG411HS, DG412HS, DG413HS Vishay Siliconix SCHEMATIC DIAGRAM (Typical Channel) V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Figure 1. TEST CIRCUITS +5V + 15 V Logic Input tr < 5 ns tf < 5 ns 3V 50 % 0V V+ VL ± 10 V S tOFF D Switch Input* VO VS VO 90 % IN RL 300 Ω V- GND CL 35 pF 90 % 0V tON - 15 V Note: Logic input waveform is inverted for switches that have the opposite logic sense control CL (includes fixture and stray capacitance) RL VO = V S RL + rDS(on) Figure 2. Switching Time +5V + 15 V Logic Input VL VS1 V+ S1 D1 VS2 Switch Output IN2 RL1 300 Ω V- GND 90 % VO2 D2 S2 50 % 0V VS1 VO1 VO1 IN1 3V RL2 300 Ω CL2 35 pF CL1 35 pF Switch Output 0V VS2 VO2 0V 90 % tD tD - 15 V CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG413HS) Document Number: 72053 S11-0179-Rev. C, 07-Feb-11 www.vishay.com 7 DG411HS, DG412HS, DG413HS Vishay Siliconix TEST CIRCUITS ΔVO Rg +5V + 15 V VL V+ VO INX OFF D S IN Vg ON OFF VO CL 1 nF 3V V- GND INX OFF ON Q = ΔVO x CL OFF -15 V Figure 4. Charge Injection +5V + 15 V C C VL V+ D1 S1 VS Rg = 50 Ω 50 Ω IN1 0 V, 2.4 V S2 D2 VO NC 0 V, 2.4 V RL IN2 GND XTALK Isolation = 20 log V- C VO - 15 V VS C = RF bypass Figure 5. Crosstalk +5V + 15 V C VL V+ C VL Rg = 50 Ω 0 V, 2.4 V + 15 V C VO D S VS +5V C V+ S RL 50 Ω IN GND V- Meter IN C HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D - 15 V Off Isolation = 20 log GND V- C VO VS C = RF Bypass Figure 6. Off-Isolation - 15 V Figure 7. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72053. www.vishay.com 8 Document Number: 72053 S11-0179-Rev. C, 07-Feb-11 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix CERDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E1 E 1 2 3 4 5 6 7 8 D S Q1 A A1 L1 L e1 C B B1 MILLIMETERS Dim A A1 B B1 C D E E1 e1 eA L L1 Q1 S ∝ eA INCHES Min Max Min Max 4.06 5.08 0.160 0.200 0.51 1.14 0.020 0.045 0.38 0.51 0.015 0.020 1.14 1.65 0.045 0.065 0.20 0.30 0.008 0.012 19.05 19.56 0.750 0.770 7.62 8.26 0.300 0.325 6.60 7.62 0.260 0.300 2.54 BSC ∝ 0.100 BSC 7.62 BSC 0.300 BSC 3.18 3.81 0.125 0.150 3.81 5.08 0.150 0.200 1.27 2.16 0.050 0.085 0.38 1.14 0.015 0.045 0° 15° 0° 15° ECN: S-03946—Rev. G, 09-Jul-01 DWG: 5403 Document Number: 71282 03-Jul-01 www.vishay.com 1 Packaging Information Vishay Siliconix 20ĆLEAD LCC A1 D L1 A Dim 28 e 1 2 E A A1 B D E e L L1 MILLIMETERS Min Max INCHES Min Max 1.37 2.24 0.054 0.088 1.63 2.54 0.064 0.100 0.56 0.71 0.022 0.028 8.69 9.09 0.342 0.358 8.69 9.09 0.442 0.358 1.27 BSC 0.050 BSC 1.14 1.40 0.045 0.055 1.96 2.36 0.077 0.093 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5321 L Document Number: 71290 02-Jul-01 B www.vishay.com 1 Package Information Vishay Siliconix QFN−16 (4 4 mm) JEDEC Part Number: MO-220 D -B- ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ Index Area (Dń2 Eń2) 4 D/2 AA E/2 BB E -ACC DD aaa C 2 X aaa C 2 X Detail A Top View // ccc C Nx 9 Seating Plane 0.08 C -C- Side View A A1 A3 D2 N L Detail B D2/2 Datum A or B N r E2/2 6 (NE-1) x e E2 2 Exposed Pad N b N N-1 8 e/2 5 e 5 5 bbb M C A B Detail A Terminal Tip Terminal Tip 1 e (ND-1) x e Even Terminal/Side 8 Odd Terminal/Side Detail B Bottom View Document Number: 71921 19-Aug-02 www.vishay.com 1 Package Information Vishay Siliconix QFN−16 (4 4 mm) JEDEC Part Number: MO-220 MILLIMETERS* Dim Min Nom A 0.80 0.90 A1 0 0.02 A3 0.20 Ref AA 0.345 aaa 0.25 BB 0.345 b 0.23 0.30 bbb 0.10 CC 0.18 ccc 0.10 D 4.00 BSC D2 2.00 2.15 DD 0.18 E 4.00 BSC E2 2.00 2.15 e 0.65 BSC L 0.45 0.55 N 16 ND 4 NE 4 r b(min)/2 * Use millimeters as the primary measurement. INCHES Max Min Nom Max 1.00 0.05 0.38 - 0.0315 0 0.0091 - 0.0394 0.0020 0.0150 - 2.25 - 0.0787 - 2.25 0.0787 0.65 0.0177 - b(min)/2 0.0354 0.0008 0.0079 0.0136 0.0098 0.0136 0.0118 0.0039 0.0071 0.0039 0.1575 BSC 0.0846 0.0071 0.1575 BSC 0.0846 0.0256 BSC 0.0217 16 4 4 - Notes 5 0.0886 0.0886 0.0256 - 3, 7 6 6 ECN: S-21437—Rev. A, 19-Aug-02 DWG: 5890 NOTES: 1. Dimensioning and tolerancing conform to ASME Y14.5M-1994. 2. All dimensions are in millimeters. All angels are in degrees. 3. N is the total number of terminals. 4. The terminal #1 identifier and terminal numbering convention shall conform to JESD 95-1 SPP-012. Details of terminal #1 identifier are optional, but must be located within the zone indicated. The terminal #1 identifier may be either a molded or marked feature. The X and Y dimension will vary according to lead counts. 5. Dimension b applies to metallized terminal and is measured between 0.25 mm and 0.30 mm from the terminal tip. 6. ND and NE refer to the number of terminals on the D and E side respectively. 7. Depopulation is possible in a symmetrical fashion. 8. Variation HHD is shown for illustration only. 9. Coplanarity applies to the exposed heat sink slug as well as the terminals. www.vishay.com 2 Document Number: 71921 19-Aug-02 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 AN505 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR QFN-16 (4 x 4 MM BODY) C1 X2 16 15 14 13 E 12 1 2 C2 11 Keep Out Zone Y2 3 10 4 9 5 6 7 8 Y1 X1 Inches Millimeters C1 0.142 3.60 C2 0.142 3.60 E 0.026 0.65 X1 0.014 0.35 X2 0.089 2.25 Y1 0.037 0.95 Y2 0.089 2.25 Note: QFN-16 (4 x 4) has an exposed center pad that must not come into contact with any metalized structure on the PCB. This area is considered a Keep Out Zone. Document Number: 74976 19-Apr-07 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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