IXYS IXTK170N10P N-channel enhancement mode avalanche rated Datasheet

IXTT170N10P
IXTQ170N10P
IXTK170N10P
PolarTM
Power MOSFET
VDSS
ID25
= 100V
= 170A
≤ 9mΩ
Ω
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
TO-268 (IXTT)
G
S
Tab
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
100
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
100
V
VGSS
Continuous
± 20
V
VGSM
Transient
± 30
V
ID25
IL(RMS)
TC = 25°C
External Lead Current Limit
170
160
A
A
IDM
TC = 25°C, Pulse Width Limited by TJM
350
A
IA
TC = 25°C
60
A
EAS
TC = 25°C
2
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
10
V/ns
PD
TC = 25°C
715
W
TJ
-55 to +175
°C
TJM
+175
°C
Tstg
-55 to +175
°C
TL
1.6mm (0.063in) from Case for 10s
300
°C
TSOLD
Plastic Body for 10s
260
°C
Md
Mounting Torque (TO-264 & TO-3P)
1.13/10
Nm/lb.in.
Weight
TO-268
TO-3P
TO-264
4.0
5.5
10.0
g
g
g
G
D
S
Tab
TO-264 (IXTK)
G
D
Tab
S
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
z
z
z
z
z
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
100
VGS(th)
VDS = VGS, ID = 250μA
2.5
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
z
V
5.0
V
±100 nA
25 μA
TJ = 150°C
RDS(on)
z
VGS = 10V, ID = 0.5 • ID25, Note 1
VGS = 15V, ID = 350A
250 μA
7
9 mΩ
mΩ
z
Applications
z
z
z
z
z
© 2010 IXYS CORPORATION, All Rights Reserved
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS99176F(01/10)
IXTT170N10P IXTQ170N10P
IXTK170N10P
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 10V, ID = 0.5 • ID25, Note 1
50
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 60A
RG = 3.3Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
72
S
6000
pF
2340
pF
730
pF
35
ns
50
ns
90
ns
33
ns
198
nC
39
nC
107
nC
0.21 °C/W
RthJC
RthCS
TO-3P (IXTQ) Outline
(TO-3P)
(TO-264)
0.25
0.15
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
170
A
ISM
Repetitive, Pulse Width Limited by TJM
350
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
QRM
IF = 25A, -di/dt = 100A/μs,
VR = 50V, VGS = 0V
120
ns
2.0
μC
TO-264 AA ( IXTK) Outline
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Back Side
Dim.
TO-268 (IXTT) Outline
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
1 =
2 =
3 =
Tab
Gate
Drain
Source
= Drain
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTT170N10P
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
320
180
VGS = 10V
VGS = 10V
160
280
9V
140
240
120
8V
ID - Amperes
ID - Amperes
IXTQ170N10P
IXTK170N10P
100
80
7V
9V
200
160
8V
120
7V
60
80
40
6V
6V
40
20
5V
5V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 85A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 150ºC
180
2.4
VGS = 10V
160
2.2
9V
2.0
8V
120
R DS(on) - Normalized
ID - Amperes
140
VGS = 10V
100
7V
80
60
6V
40
1.8
I D = 170A
I D = 85A
1.6
1.4
1.2
1.0
20
0.8
5V
0
0.6
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50
-25
0
VDS - Volts
25
50
75
100
125
150
175
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 85A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
180
3.0
VGS = 10V
160
15V - - - - -
2.6
External Lead Current Limit
2.2
TJ = 175ºC
ID - Amperes
R DS(on) - Normalized
140
1.8
120
100
80
60
1.4
40
TJ = 25ºC
1.0
20
0.6
0
0
50
100
150
200
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
250
300
350
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
IXTT170N10P IXTQ170N10P
IXTK170N10P
Fig. 8. Transconductance
Fig. 7. Input Admittance
120
320
TJ = - 40ºC
280
g f s - Siemens
240
ID - Amperes
100
TJ = - 40ºC
25ºC
150ºC
200
160
120
80
25ºC
60
150ºC
40
80
20
40
0
0
3
4
5
6
7
8
9
0
10
40
80
120
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
200
240
280
320
Fig. 10. Gate Charge
10
350
VDS = 50V
9
300
I D = 85A
8
TJ = 25ºC
I G = 10mA
7
VGS - Volts
250
IS - Amperes
160
ID - Amperes
VGS - Volts
TJ = 150ºC
200
150
6
5
4
3
100
2
50
1
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1.6
20
40
60
VSD - Volts
Fig. 11. Capacitance
100
120
140
160
180
200
Fig. 12. Forward-Bias Safe Operating Area
100,000
1,000
f = 1 MHz
1ms
RDS(on) Limit
100µs
10ms
DC
10,000
Ciss
1,000
Coss
100
ID - Amperes
Capacitance - PicoFarads
80
QG - NanoCoulombs
10
TJ = 175ºC
Crss
TC = 25ºC
Single Pulse
100
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10
VDS - Volts
100
IXTT170N10P IXTQ170N10P
IXTK170N10P
Fig. 13. Maximum Transient Thermal Impedance
Z (th )J C - ºC / W
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_170N10P(8S)01-07-10-C
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