CPH6354 Ordering number : ENA1946 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6354 General-Purpose Switching Device Applications Features • • • • ON-resistance RDS(on)1=77mΩ(typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1500mm2×0.8mm) Unit --60 V ±20 V --4 A --16 A 1.6 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7018A-003 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 0.15 5 Packing Type: TL 4 Marking 0.9 XE 1 2 0.95 3 LOT No. 0.05 1.6 0.2 0.6 2.8 0.2 0.6 2.9 6 TL 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Electrical Connection 1, 2, 5, 6 SANYO : CPH6 3 4 http://semicon.sanyo.com/en/network N0211PE TKIM TC-00002651 No. A1946-1/4 CPH6354 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--60V, VGS=0V typ Unit max --60 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--2A 4.8 RDS(on)1 ID=--2A, VGS=--10V 77 100 mΩ RDS(on)2 ID=--1A, VGS=--4.5V 96 135 mΩ RDS(on)3 ID=--1A, VGS=--4V 103 145 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.2 --1 μA ±10 μA --2.6 V S 600 pF 60 pF Crss 50 pF Turn-ON Delay Time td(on) 5.8 ns Rise Time tr td(off) 12 ns 78 ns Turn-OFF Delay Time Fall Time VDS=--20V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--30V, VGS=--10V, ID=--4A 40 ns 14 nC 1.6 nC 3.4 IS=--4A, VGS=0V nC --0.84 --1.2 V Switching Time Test Circuit 0V --10V VIN VDD= --30V ID= --2A RL=15Ω VIN D PW=10μs D.C.≤1% VOUT G CPH6354 P.G 50Ω S ID -- VDS ID -- VGS --8 VDS= --10V 0V --4 .0 . --3 --7 --2.5 --2.0 VGS= --2.5V --1.5 --1.0 --0.5 0 --6 --5 --4 --3 Ta=7 5°C 25° --25° C C Drain Current, ID -- A --4 . 5V --10 .0 V --3.0 --16 .0 Drain Current, ID -- A V --3.5 V --6.0 V --4.0 --2 --1 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT16614 0 0 --1 --2 --3 --4 --5 Gate-to-Source Voltage, VGS -- V --6 IT16615 No. A1946-2/4 CPH6354 RDS(on) -- VGS ID= --1A --2A 160 140 120 100 80 60 40 20 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 7 = Ta °C 7 °C 75 5 3 0 20 40 60 80 100 120 140 160 IT16617 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 5 7 --10 IT16618 7 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V SW Time -- ID 100 7 td(off) --1.2 IT16619 Ciss, Coss, Crss -- VDS 1000 5 f=1MHz Ciss 5 2 tr 10 7 3 Ciss, Coss, Crss -- pF tf 3 td(on) 5 3 2 100 7 Coss 5 Crss 3 2 2 VDD= --30V VGS= --10V 1.0 --0.1 2 3 5 7 2 --1.0 3 Drain Current, ID -- A 5 7 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --1 0 2 4 6 8 10 0 --10 12 Total Gate Charge, Qg -- nC 14 16 IT16622 --20 --30 --40 --50 Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 VDS= --30V ID= --4A --9 10 --10 IT16620 VGS -- Qg --10 0 --20 = --2 0V, I D --10. Ambient Temperature, Ta -- °C 2 Drain Current, ID -- A Switching Time, SW Time -- ns 0 --60 --40 Source Current, IS -- A C 5° A = VGS 50 --10 7 5 3 0.1 --0.01 Gate-to-Source Voltage, VGS -- V A = --1 V, I D .0 = --4 VGS 100 5 1.0 = -VGS IT16616 | yfs | -- ID --2 = -, ID 4.5V 150 VDS= --10V 2 1A 200 --16 25 Forward Transfer Admittance, | yfs | -- S 10 250 Ta=7 5°C 25°C 180 --25°C 200 RDS(on) -- Ta 300 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 220 --10 7 5 3 2 ASO IDP= --16A (PW≤10μs) 10 0μ ID= --4A DC s 1m 10 op ms 10 er --1.0 7 5 3 2 --0.1 7 5 3 2 --60 IT16621 ati 0m Operation in this area is limited by RDS(on). on s s (T a= 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1500mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT16623 No. A1946-3/4 CPH6354 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (1500mm2×0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT16624 Note on usage : Since the CPH6354 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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