FDPF045N10A N-Channel PowerTrench® MOSFET 100V, 67A, 4.5mΩ Features Description • RDS(on) = 3.7mΩ ( Typ.)@ VGS = 10V, ID = 67A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • High Power and Current Handling Capability • DC to DC Converters • RoHS Compliant • Synchronous Rectification for Telecommunication PSU • Battery Charger • AC motor drives and Uninterruptible Power Supplies • Off-line UPS D G GD S TO-220F (Retractable) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Units V ±20 V - Continuous (TC = 25oC) 67 - Continuous (TC = 100oC) 47 - Pulsed (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Ratings 100 - Derate above 25oC A (Note 1) 268 A (Note 2) 637 mJ (Note 3) 6.0 V/ns 43 W 0.29 W/oC o -55 to +175 C 300 oC Ratings Units Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 3.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2011 Fairchild Semiconductor Corporation FDPF045N10A Rev. C0 1 o C/W www.fairchildsemi.com FDPF045N10A N-Channel PowerTrench® MOSFET August 2011 Device Marking FDPF045N10A Device FDPF045N10A Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V - 0.06 - V/oC Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V ID = 250µA, Referenced to 25oC VDS = 80V, VGS = 0V - - 1 VDS = 80V, TC = 150oC - - 500 VGS = ±20V, VDS = 0V - - ±100 2.0 - 4.0 V - 3.7 4.5 mΩ - 127 - S µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 67A VDS = 10V, ID = 67A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Engry Releted Output Capacitance - 3961 5270 pF - 925 1230 pF - 34 - pF VDS = 50V, VGS = 0V - 1521 - pF VGS = 10V, VDS = 50V ID = 100A VDS = 50V, VGS = 0V f = 1MHz Qg(tot) Total Gate Charge at 10V - 57 74 nC Qgs Gate to Source Gate Charge - 17 - nC Qgs2 Gate Charge Threshold to Plateau - 8 - nC Qgd Gate to Drain “Miller” Charge - 13 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time ESR Equivalent Series Resistance (G-S) VDD = 50V, ID = 100A VGS = 10V, RGEN = 4.7Ω (Note 4, 5) Drain Open, f = 1MHz - 23 56 ns - 26 62 ns - 50 110 ns - 15 40 ns - 1.9 - Ω Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 67 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 268 A VGS = 0V, ISD = 67A - - 1.3 V VGS = 0V, VDD = 50V, ISD = 100A dIF/dt = 100A/µs (Note 4) - 75 - ns - 120 - nC VSD Drain to Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 20.6A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 100A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Dual Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDPF045N10A Rev. C0 2 www.fairchildsemi.com FDPF045N10A N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 500 *Notes: 1. VDS = 10V 2. 250µs Pulse Test 100 100 ID, Drain Current[A] ID, Drain Current[A] VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V o o 175 C 25 C 10 o -55 C *Notes: 1. 250µs Pulse Test o 2. TC = 25 C 10 0.1 1 1 VDS, Drain-Source Voltage[V] 2 1 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 4.5 500 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 2 3 4 5 VGS, Gate-Source Voltage[V] VGS = 10V 4.0 VGS = 20V 3.5 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 3.0 0 100 200 300 ID, Drain Current [A] 1 0.0 400 Figure 5. Capacitance Characteristics 2. 250µs Pulse Test 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 10000 10 VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 FDPF045N10A Rev. C0 VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 *Note: ID = 100A 0 1 10 VDS, Drain-Source Voltage [V] 0 100 3 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FDPF045N10A N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250µA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 2.0 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area vs. Case Temperature *Notes: 1. VGS = 10V 2. ID = 67A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current 500 75 100 VGS = 10V 100µs 1 ID, Drain Current [A] ID, Drain Current [A] 60 10 1ms Operation in This Area is Limited by R DS(on) 10ms 100ms 0.1 DC *Notes: 0.01 o 45 30 15 1. TC = 25 C o 0.001 0.1 o 2. TJ = 175 C 3. Single Pulse 1 10 VDS, Drain-Source Voltage [V] RθJC = 3.5 C/W 0 25 100 200 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Eoss vs. Drain to Source Voltage 5 EOSS, [µJ] 4 3 2 1 0 0 FDPF045N10A Rev. C0 25 50 75 VDS, Drain to Source Voltage [V] 100 4 www.fairchildsemi.com FDPF045N10A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDPF045N10A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve 5 Thermal Response [ZθJC] 0.5 1 0.2 0.1 0.05 0.1 t1 0.01 t2 0.01 *Notes: o Single pulse 0.001 -5 10 FDPF045N10A Rev. C0 PDM 0.02 1. ZθJC(t) = 3.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 100 www.fairchildsemi.com FDPF045N10A N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDPF045N10A Rev. C0 6 www.fairchildsemi.com FDPF045N10A N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDPF045N10A Rev. C0 7 www.fairchildsemi.com FDPF045N10A N-Channel PowerTrench® MOSFET Package Dimensions TO-220F (Retractable) * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FDPF045N10A Rev. C0 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 FDPF045N10A Rev. 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