AO4413A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard product AO4413A is Pb-free (meets ROHS & Sony 259 specifications). AO4413AL is a Green Product ordering option. AO4413A and AO4413AL are electrically identical. VDS (V) = -30V ID = -15A (V GS = -10V) RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V) SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±25 V -80 3 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -12.8 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -15 TA=25°C Power Dissipation A Maximum -30 RθJA RθJL Typ 32 62 18 Max 40 75 24 Units °C/W °C/W °C/W AO4413A Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 -5 Gate-Body leakage current VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -60 VGS=-20V, I D=-15A Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A 8.7 VDS=-5V, ID=-15A 48 S -1 V 5 A 5500 pF 983 pF 689 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, I D=-15A mΩ mΩ -0.72 4245 VGS=0V, VDS=-15V, f=1MHz 8.5 mΩ pF 12 18 Ω 69 90 nC nC Gate Drain Charge 18.8 nC Turn-On DelayTime 16.5 ns tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Qrr 7 15.2 Qgd trr 5.5 8.2 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance V VGS=-6V, ID=-10A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Coss nA -3.5 6.6 Forward Transconductance IS ±100 VGS=-10V, I D=-15A VSD µA -2.2 TJ=125°C gFS Units V TJ=55°C IGSS Static Drain-Source On-Resistance Max VDS=-24V, VGS=0V VGS(th) RDS(ON) Typ VGS=-10V, VDS=-15V, RL=1.0Ω, RGEN=3Ω 23.5 ns 116 ns 82 Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs 59 Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 55 ns 77 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. -15 C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. -12.8 D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. Rev 0: July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. ns nC AO4413A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 -4.5V 25 -4V 20 -ID(A) 20 -ID (A) VDS=-5V 25 -5V -10V 15 125°C 15 10 10 VGS=-3.5V 5 25°C 5 0 0 0 1 2 3 4 5 2 2.5 12 3.5 4 4.5 Normalized On-Resistance 1.6 10 RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-6V 8 VGS=-10V 6 VGS=-20V VGS=-20V ID=-15A VGS=-10V ID=-15A 1.4 VGS=-6V ID=-10A 1.2 1 4 0 5 10 15 20 25 0.8 30 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -15 1.0E+01 30 -12.8 ID=-15A 25 1.0E+00 1.0E-01 20 -IS (A) RDS(ON) (mΩ) 25 15 125°C 10 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 5 25°C 1.0E-05 0 4 8 12 16 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 20 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4413A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6000 10 VDS=-15V ID=-15A 5000 Capacitance (pF) -VGS (Volts) 8 6 4 2 4000 3000 1000 Crss 0 0 10 20 30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 40 RDS(ON) limited 100µs 30 Power (W) -ID (Amps) 10ms 0.1s 1s 1.0 20 10 10s TJ(Max)=150°C TA=25°C DC 0 0.001 0.1 0.1 30 TJ(Max)=150°C TA=25°C 10µs 1ms 10.0 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -V (Volts) Figure 9: Maximum DS Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance Coss 2000 0 10 Ciss -15 -12.8 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Single Pulse 0.01 0.00001 0.0001 Ton 0.001 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. T 100 1000