Renesas NESG2031M05-T1 Npn sige rf transistor for low noise, high-gain amplification Datasheet

Data Sheet
NESG2031M05
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
R09DS0035EJ0400
Rev. 4.00
Jun 20, 2012
FEATURES
• The device is an ideal choice for low noise, high-gain at low current amplifications.
⎯ NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
<R>
ORDERING INFORMATION
Part Number
Order Number
NESG2031M05
NESG2031M05-A
NESG2031M05-T1
NESG2031M05-T1-A
Remark
Package
Quantity
Supplying Form
Flat-lead 4-pin thintype supper minimold
(M05, 2012 PKG)
(Pb-Free)
50 pcs
(Non reel)
3 kpcs/reel
• 8 mm wide embossed
taping
• Pin 3 (Collector), Pin 4
(Emitter) face the
perforation side of the tape
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note:
Symbol
VCBO
VCEO
VEBO
IC
Note
Ptot
Tj
Tstg
Ratings
13.0
5.0
1.5
35
175
150
−65 to +150
Unit
V
V
V
mA
mW
°C
°C
Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 1 of 12
NESG2031M05
<R>
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Symbol
ICBO
IEBO
hFE Note 1
fT
⏐S21e⏐2
NF
Noise Figure (2)
NF
Associated Gain (1)
Ga
Associated Gain (2)
Ga
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output
Power
3rd Order Intermodulation
Distortion Output Intercept
Point
Cre Note 2
MSG Note 3
PO (1 dB)
OIP3
Test Conditions
MIN.
TYP.
MAX.
Unit
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 2 V, IC = 5 mA
−
−
130
−
−
190
100
100
260
nA
nA
−
VCE = 3 V, IC = 20 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
VCB = 2 V, IE = 0, f = 1 MHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
20
16.0
25
18.0
−
−
GHz
dB
−
0.8
1.1
dB
−
1.3
−
dB
15.0
17.0
−
dB
−
10.0
−
dB
−
19.0
0.15
21.5
0.25
−
pF
dB
−
13
−
dBm
VCE = 3 V, IC = 20 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
−
23
−
dBm
Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
hFE CLASSIFICATION
<R>
Rank
Marking
hFE Value
FB/YFB
T1H
130 to 260
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 2 of 12
NESG2031M05
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation Ptot (mW)
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
175
150
100
50
0
75
100
125
0.2
0.1
2
4
6
8
10
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
Collector Current IC (mA)
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
VCE = 3 V
10
1
0.1
0.01
0.001
0.0001
0.4
f = 1 MHz
Ambient Temperature TA (˚C)
1
100
0.3
0
150
10
0.0001
0.4
Collector Current IC (mA)
50
Collector Current IC (mA)
Collector Current IC (mA)
100
25
Reverse Transfer Capacitance Cre (pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
30
200 μ A
180 μ A
25
140 μ A
160 μ A
120 μ A
20
100 μ A
80 μ A
15
60 μ A
10
40 μ A
5
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
0
IB = 20 μ A
1
2
3
4
5
6
Collector to Emitter Voltage VCE (V)
Remark The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 3 of 12
NESG2031M05
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
100
10
0.1
VCE = 2 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 1 V
1
10
100
100
10
0.1
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
DC Current Gain hFE
VCE = 3 V
100
10
0.1
1
10
100
Collector Current IC (mA)
Remark The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 4 of 12
NESG2031M05
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
25
20
15
10
5
0
1
Gain Bandwidth Product fT (GHz)
35
30
10
20
15
10
5
10
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
20
15
10
5
0
1
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
Collector Current IC (mA)
25
10
100
40
VCE = 1 V
IC = 20 mA
35
30
MSG
MAG
25
20
15
|S21e|2
10
5
0
0.1
1
10
100
Collector Current IC (mA)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
VCE = 2 V
IC = 20 mA
35
MSG
MAG
25
20
|S21e|2
15
10
5
0
0.1
VCE = 2 V
f = 2 GHz
Collector Current IC (mA)
VCE = 3 V
f = 2 GHz
30
30
0
1
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
35
VCE = 1 V
f = 2 GHz
1
10
100
Frequency f (GHz)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Gain Bandwidth Product fT (GHz)
35
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
VCE = 3 V
IC = 20 mA
35
30
MSG
MAG
25
20
|S21e|2
15
10
5
0
0.1
1
10
100
Frequency f (GHz)
Remark The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 5 of 12
NESG2031M05
25
VCE = 1 V
f = 1 GHz
MSG
20
MAG
|S21e|2
15
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
VCE = 1 V
f = 2 GHz
MSG
MAG
20
15
|S21e|2
10
5
0
1
10
100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
25
VCE = 1 V
f = 3 GHz
MSG
20
MAG
15
|S21e|
10
2
5
0
30
25
1
10
100
30
25
VCE = 1 V
f = 5 GHz
20
15
MAG
10
|S21e|2
5
0
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 2 V
f = 1 GHz
MSG
|S21e|
20
2
15
10
5
0
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Collector Current IC (mA)
1
10
100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
VCE = 2 V
f = 2 GHz
MSG
MAG
20
|S21e|2
15
10
5
0
1
10
100
Collector Current IC (mA)
Remark The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 6 of 12
NESG2031M05
MSG
20
MAG
15
|S21e|2
10
5
0
30
25
1
10
100
30
25
VCE = 2 V
f = 5 GHz
20
MAG
15
10
|S21e|2
5
0
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 3 V
f = 1 GHz
MSG
|S21e|2
20
15
10
5
0
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
25
VCE = 2 V
f = 3 GHz
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
25
VCE = 3 V
f = 2 GHz
MSG
MAG
20
|S21e|2
15
10
5
0
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
25
VCE = 3 V
f = 3 GHz
MSG
20
MAG
15
|S21e|2
10
5
0
1
10
100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
VCE = 3 V
f = 5 GHz
20
MAG
15
10
|S21e|2
5
0
1
10
100
Collector Current IC (mA)
Remark The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 7 of 12
NESG2031M05
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
50
20
30
IC
5
20
10
0
–25
–20
–15
–10
0
–5
5
20
IC
10
0
–5
–25
–20
–15
–10
0
0
–5
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
50
Pout
30
10
5
20
IC
10
0
–10
–5
0
0
5
Input Power Pin (dBm)
Output Power Pout (dBm)
40
Collector Current IC (mA)
VCE = 3 V, f = 5.2 GHz
Icq = 20 mA (RF OFF)
15
–15
50
20
VCE = 3 V, f = 3 GHz
Icq = 20 mA (RF OFF)
Output Power Pout (dBm)
30
Input Power Pin (dBm)
20
–5
–20
Pout
10
40
15
Pout
30
10
5
20
IC
10
0
–5
–15
–10
–5
0
5
Collector Current IC (mA)
–5
–30
40
15
Collector Current IC (mA)
Pout
Output Power Pout (dBm)
40
15
10
50
VCE = 3 V, f = 2 GHz
Icq = 20 mA (RF OFF)
Collector Current IC (mA)
Output Power Pout (dBm)
VCE = 3 V, f = 1 GHz
Icq = 20 mA (RF OFF)
0
10
Input Power Pin (dBm)
Remark The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 8 of 12
NESG2031M05
2
10
0
1
VCE = 1 V
f = 1 GHz
5
25
4
20
3
15
2
10
1
NF
0
0
100
10
Ga
1
VCE = 2 V
f = 1 GHz
5
0
100
10
Collector Current IC (mA)
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
30
5
25
5
25
20
Ga
3
15
2
10
1
NF
0
1
VCE = 1 V
f = 2 GHz
5
Noise Figure NF (dB)
30
Associated Gain Ga (dB)
6
4
15
2
10
NF
0
1
VCE = 2 V
f = 2 GHz
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
10
5
Ga
4
8
3
6
2
4
1
NF
1
VCE = 1 V
f = 5.2 GHz
10
2
0
100
Collector Current IC (mA)
Noise Figure NF (dB)
12
5
0
100
10
Collector Current IC (mA)
6
0
20
3
1
0
100
10
Ga
4
12
Ga
10
4
8
3
6
2
4
1
0
Associated Gain Ga (dB)
15
30
Associated Gain Ga (dB)
3
Associated Gain Ga (dB)
Noise Figure NF (dB)
5
20
NF
Noise Figure NF (dB)
25
4
1
Noise Figure NF (dB)
6
Noise Figure NF (dB)
Ga
5
30
Associated Gain Ga (dB)
6
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NF
1
VCE = 2 V
f = 5.2 GHz
10
2
Associated Gain Ga (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
0
100
Collector Current IC (mA)
Remark The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 9 of 12
NESG2031M05
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
30
25
4
20
3
15
2
10
1
NF
0
1
VCE = 3 V
f = 1 GHz
5
Associated Gain Ga (dB)
Noise Figure NF (dB)
Ga
5
0
100
10
Collector Current IC (mA)
6
30
5
25
Ga
4
20
3
15
2
10
1
NF
0
1
VCE = 3 V
f = 2 GHz
5
Associated Gain Ga (dB)
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
0
100
10
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
12
5
10
4
8
3
6
2
4
1
0
NF
1
VCE = 3 V
f = 5.2 GHz
10
2
Associated Gain Ga (dB)
Noise Figure NF (dB)
Ga
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 10 of 12
NESG2031M05
S-PARAMETERS
<R>
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 11 of 12
NESG2031M05
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm)
(Top View)
(Bottom View)
2.05±0.1
1.25±0.1
2
1
4
0.30+0.1
–0.05
T1H
(0.65)
0.65
1.30
3
(1.05)
2.0±0.1
0.11+0.1
–0.05
0.5
0.59±0.05
<R>
PIN CONNENTION
1. Base
2. Emitter
3. Collector
4. Emitter
Remark ( ) : Reference value
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 12 of 12
Revision History
NESG2031M05 Data Sheet
Description
Rev.
−
4.00
Date
Sep 2004
Jun 20, 2012
Page
−
p.1
p.2
p.11
p.12
Summary
Previous No. : PU10189EJ03V0DS
Modification of ORDERING INFORMATION
Modification of ELECTRICAL CHARACTERISTICS
Modification of hFE CLASSIFICATION
Modification of S-PARAMETERS
Modification of PACKAGE DIMENSIONS
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Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
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