ECH8651R Ordering number : ENA1010 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8651R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 24 V ±12 V ID 10 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 1.4 W Total Dissipation When mounted on ceramic substrate (900mm2✕0.8mm) Channel Temperature PT Tch Storage Temperature Tstg 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : WV Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=1mA, VGS=0V Ratings min typ Unit max 24 V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=5A 5.5 1 μA ±10 μA 1.3 9.5 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40908PE TI IM TC-00001313 No. A1010-1/4 ECH8651R Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=5A, VGS=4.5V ID=5A, VGS=4.0V RDS(on)3 RDS(on)4 ID=5A, VGS=3.1V ID=2.5A, VGS=2.5V Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs min 10.5 14 mΩ 11 15 mΩ 7.5 12.5 17.5 mΩ 9 15 21 mΩ 300 ns ns See specified Test Circuit. 4000 ns See specified Test Circuit. 2500 ns Qgd VSD IS=10A, VGS=0V 24 nC 2 nC 4.5 0.77 nC 1.2 V Electrical Connection unit : mm (typ) 7011A-003 8 7 6 5 1 2 3 4 Top View 2.9 0.25 7 7.2 1000 Gate-to-Drain “Miller” Charge 0.15 5 2.3 0 to 0.02 2.8 Unit max See specified Test Circuit. Diode Forward Voltage 8 typ See specified Test Circuit. VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A Package Dimensions Ratings Conditions 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 4 1 0.65 0.3 0.9 0.25 Top view 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=5A RL=2Ω VIN D VOUT PW=10μs D.C.≤1% Rg G P.G ECH8651R 50Ω S Rg=1kΩ No. A1010-2/4 ECH8651R ID -- VDS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4V 1.5V 7 4.5V Drain Current, ID -- A 8 2.5 3.1V 9 6 5 4 3 2 1 VGS=1V 0 0 0.1 0.2 0.3 0.4 50 100 150 8 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ⏐yfs⏐ -- ID VDS=10V 7 5 = Ta --2 C 5° 75 °C °C 25 3 2 2 3 5 7 2 1.0 3 Drain Current, ID -- A 2.5 2.0 1.5 1.0 0.5 0 15 3 tf 2 tr 1000 7 5 td(on) 3 2 2 20 Total Gate Charge, Qg -- nC 25 30 IT13296 3 5 7 2 1.0 3 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 5 7 10 IT13295 ASO 2 3.5 7 10 IT13151 VDD=10V VGS=4V Drain Current, ID -- A VDS=10V ID=10A 10 5 td (off) IT13152 3.0 5 SW Time -- ID 100 0.1 0.9 VGS -- Qg 4.5 10 IT13149 Drain Current, ID -- A Switching Time, SW Time -- ns 25° C --25 °C °C Ta= 75 Source Current, IS -- A 0.01 7 5 3 2 Diode Forward Voltage, VSD -- V Gate-to-Source Voltage, VGS -- V 6 7 0.1 7 5 3 2 5 4 1000 1.0 7 5 3 2 0 2 IT13150 IS -- VSD 4.0 5 1.0 0.1 VGS=0V 0.001 0.1 10 Gate-to-Source Voltage, VGS -- V 200 Ambient Temperature, Ta -- °C 10 7 5 3 2 5.0A 15 0 Forward Transfer Admittance, ⏐yfs⏐ -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 5 0 ID=2.5A 20 10 2.5A I D= , V =2.5 =5A VGS V, I D 1 . 3 = 5A VGS , I D= 4.5V = VGS A 5 = I 4.0V, D V GS= 0 --50 25 IT13148 25 10 30 0 RDS(on) -- Ta 30 15 Ta=25°C 35 0.5 Drain-to-Source Voltage, VDS -- V 20 RDS(on) -- VGS 40 V 10 IDP=60A ID=10A 10 DC Operation in this area is limited by RDS(on). PW≤10μs 10 0μ 1m s s 10 ms 0m s op era 0.1 7 Ta=25°C 5 Single pulse 3 When mounted on ceramic substrate 2 (900mm2✕0.8mm) 1unit 0.01 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 tio n 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13390 No. A1010-3/4 ECH8651R PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.4 1.2 To t al 1.0 Di ss 1u 0.8 ni t ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13154 Note on usage : Since the ECH8651R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2008. Specifications and information herein are subject to change without notice. PS No. A1010-4/4