HMC476SC70 / 476SC70E v01.0110 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 Typical Applications Features The HMC476SC70(E) is ideal for: P1dB Output Power: +12 dBm • Cellular / PCS / 3G Gain: 20 dB • WiBro / WiMAX / 4G Output IP3: +24 dBm • Fixed Wireless & WLAN Cascadable 50 Ohm I/Os • CATV, Cable Modem & DBS Single Supply: +5V to +12V • Microwave Radio & Test Equipment Industry Standard SC70 Package Functional Diagram General Description The HMC476SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 6 GHz. This industry standard SC70 packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +12 dBm output power. The HMC476SC70(E) offers 20 dB of gain with a +24 dBm output IP3 at 850 MHz while requiring only 35 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifi cations, Vs= 5V, Rbias= 56 Ohm, TA = +25° C Parameter DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz Gain Gain Variation Over Temperature Min. Typ. 16 13 9 19 16 12 Max. Units dB dB dB DC - 6 GHz 0.008 Input Return Loss DC - 4 GHz 4.0 - 6.0 GHz 20 15 dB dB Output Return Loss DC - 4 GHz 4.0 - 6.0 GHz 20 13 dB dB Reverse Isolation DC - 6 GHz 9.0 8.0 0.012 dB/ °C 18 dB 12.0 11.0 dBm dBm Output Power for 1 dB Compression (P1dB) 0.5 - 4.0 GHz 4.0 - 6.0 GHz Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) 0.5 - 4.0 GHz 4.0 - 6.0 GHz 24 22 dBm dBm Noise Figure 0.5 - 4.0 GHz 4.0 - 6.0 GHz 2.5 3.0 dB dB Supply Current (Icq) 9 - 86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz 35 42 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC476SC70 / 476SC70E v01.0110 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Broadband Gain & Return Loss Gain vs. Temperature 9 24 25 20 20 5 S21 S11 S22 0 -5 -10 16 12 +25C +85C -40C 8 -15 -20 4 -25 0 -30 0 1 2 3 4 5 6 7 0 8 1 0 -5 -5 +25C +85C -40C -15 -20 -25 4 5 6 +25C +85C -40C -10 -15 -20 -25 -30 -30 0 1 2 3 4 5 6 0 1 FREQUENCY (GHz) 2 3 4 5 6 5 6 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 8 0 -5 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 3 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -10 2 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -40C -10 -15 -20 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 10 GAIN (dB) RESPONSE (dB) 15 +25 C +85 C -40 C 6 4 2 -25 0 -30 0 1 2 3 4 FREQUENCY (GHz) 5 6 0 1 2 3 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 87 HMC476SC70 / 476SC70E v01.0110 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz P1dB vs. Temperature 15 15 12 12 Psat (dBm) P1dB (dBm) 18 9 +25 C +85 C -40 C 6 9 +25C +85C -40C 6 3 3 0 0 0 1 2 3 4 5 6 0 1 2 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 26 22 +25C +85C -40C 14 10 0 1 2 3 4 5 4 5 6 28 24 20 16 12 8 Gain P1dB Psat IP3 4 0 5 6 7 FREQUENCY (GHz) 8 9 Vs (Vdc) Icc vs. Vcc Over Temperature for Fixed Vs = 5V, RBIAS = 56 Ohms 42 +85 C 40 +25 C Icc (mA) 38 36 -40 C 34 32 30 2.7 2.8 2.9 3 3.1 3.2 Vcc (V) 9 - 88 6 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc = 35 mA @ 850 MHz 30 18 3 FREQUENCY (GHz) Output IP3 vs. Temperature IP3 (dBm) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 Psat vs. Temperature 18 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 HMC476SC70 / 476SC70E v01.0110 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Absolute Maximum Ratings +6V Collector Bias Current (Icc) 45 mA RF Input Power (RFIN)(Vcc = +2.4V) +5 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 7.75 mW/°C above 85 °C) 0.504 W Thermal Resistance (junction to lead) 129 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD MATERIAL: COPPER ALLOY 3. LEAD PLATING: Sn/Pb SOLDER 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Collector Bias Voltage (Vcc) 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC476SC70 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC476SC70E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [1] 476 [2] 476E [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 89 HMC476SC70 / 476SC70E v01.0110 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Pin Descriptions DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 Pin Number Function Description Interface Schematic 1, 2, 4, 5 GND These pins must be connected to RF/DC ground. 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 6 RFOUT RF output and DC Bias (Vcc) for the output stage. Application Circuit Recommended Bias Resistor Values for Icc= 35 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 5V 8V 10V 12V RBIAS VALUE 56 Ω 130 Ω 180 Ω 240 Ω RBIAS POWER RATING 1/8 W 1/4 W 1/4 W 1/2 W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 9 - 90 50 900 1900 2200 2400 3500 5200 5800 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 6.8 nH 3.3 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC476SC70 / 476SC70E v01.0110 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Evaluation PCB List of Materials for Evaluation PCB 118038 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1 - C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor, Tantalum R1 50 Ohm Resistor, 1210 Pkg. L1 18 nH Inductor, 0603 Pkg. U1 HMC476SC70(E) PCB [2] 117360 Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 91