MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID(rms) .......................................................... 200A ● VDSS ............................................................. 150V ● Insulated Type ● 6-elements in a pack ● NTC Thermistor inside ● UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION AC motor control of forklift (battery power source), UPS OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 110 97 ±0.25 70.9 32 6.5 16 16 36 36 10 35 ±1.0 10 30 6.5 V 20 (SCREWING DEPTH) 32 4 25 B P Tc measured point Housing Type of A and B (Tyco Electronics P/N:) A: 917353-1 B: 179838-1 (9)GWP (3)SWP V W (10)GUN (11)GVN (12)GWN (4)SUN N (5)SVN (6)SWN (13) NTC U 90 14 20 32 CIRCUIT DIAGRAM (8)GVP (2)SVP 80 14 A (7)GUP (1)SUP 75 W 14 20 16.5 4 22.57 U 14 7-M6NUTS 3.96 9.2 5-6.5 38 6 (6) 12 3 (8.7) 67 ±0.25 9.1 13 1 14 4-φ6.5 MOUNTING HOLES 11.5 (6) P (15.8) 3 6.5 7 (14.5) (14.5) (6) 7 N (17.5) 7 22.75 26 ＋1.0 −0.5 30 L A B E L 15.2 16.5 (14) (1)SUP (2)SVP (3)SWP (7)GUP (8)GVP (9)GWP (10)GUN (11)GVN (12)GWN (13)TH1 (14)TH2 (4)SUN (5)SVN (6)SWN A B Feb. 2009 MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.) Symbol VDSS VGSS ID(rms) IDM IDA IS(rms)*1 ISM*1 PD*4 PD*4 Tch Tstg Viso Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage — Mounting torque — Weight Ratings 150 ±20 200 400 200 200 400 650 880 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 Conditions G-S Short D-S Short TC’ = 112°C*3 Pulse*2 L = 10µH Pulse*2 Pulse*2 TC = 25°C TC’ = 25°C*3 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Unit V V Arms A A Arms A W W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.) Item Symbol IDSS VGS(th) IGSS rDS(ON) (chip) VDS(ON) (chip) Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage R(lead) Lead resistance Ciss Coss Crss QG td(on) tr td(off) tf trr*1 Qrr*1 VSD*1 Rth(ch-c) Rth(ch-c’) Rth(c-f) Rth(c’-f’) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance Conditions VDS = VDSS, VGS = 0V ID = 20mA, VDS = 10V VGS = VGSS, VDS = 0V ID = 200A VGS = 15V ID = 200A VGS = 15V ID = 200A terminal-chip Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C VDS = 10V VGS = 0V VDD = 80V, ID = 200A, VGS = 15V VDD = 80V, ID = 200A, VGS ± 15V RG = 6.3Ω, Inductive load IS = 200A IS = 200A, VGS = 0V MOSFET part (1/6 module)*7 MOSFET part (1/6 module)*3 Case to heat sink, Thermal grease Applied*8 (1/6 module) Case to heat sink, Thermal grease Applied*3, *8 (1/6 module) Min. — 4.7 — — — — — — — — — — — — — — — — — — — — — — Limits Typ. — 6 — 2.6 4.8 0.52 0.96 0.8 1.12 — — — 1300 — — — — — 7.0 — — — 0.1 0.09 Max. 1 7.3 1.5 3.55 — 0.71 — — — 75 10 6 — 400 300 450 200 200 — 1.3 0.19 0.142 — — Min. — — Limits Typ. 100 4000 Max. — — Unit mA V µA mΩ V mΩ nF nC ns ns µC V K/W NTC THERMISTOR PART Symbol RTh*6 B*6 Parameter Resistance B Constant Conditions TTh = 25°C*5 Resistance at TTh = 25°C, 50°C*5 Unit kΩ K *1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. *3: Case Temperature (Tc’) measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5: TTh is thermistor temperature. 1 *6: B = In( R25 )/( 1 ) R50 T25 T50 R25: resistance at absolute temperature T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 = 50 [°C]+273.15 = 323.15 [K] *7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING. *8: Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) Chip OUTPUT CHARACTERISTICS (TYPICAL) Chip 350 DRAIN CURRENT ID (A) 400 VGS = 20V VDS = 10V 12V 15V 10V DRAIN CURRENT ID (A) 400 300 250 200 9V 150 100 300 Tch = 25°C Tch = 125°C 200 100 50 Tch = 25°C 0 0 0.4 0.8 1.2 1.6 0 2.0 5 GATE THRESHOLD VOLTAGE VGS(th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS(ON) (mΩ) 7 ID = 200A 6 VGS = 12V 5 VGS = 15V 3 2 1 0 20 40 60 13 15 80 100 120 140 160 7 6 5 VDS = 10V ID = 20mA 4 3 2 1 0 0 20 40 60 80 100 120 140 160 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS (TYPICAL) Chip 102 3.0 Tch = 25°C CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 2.5 CAPACITANCE (nF) DRAIN-SOURCE ON-STATE VOLTAGE VDS(ON) (V) 11 GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE VOLTAGE VS. TEMPERATURE (TYPICAL) Chip 0 9 GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE VOLTAGE VDS (V) 4 7 2.0 1.5 ID = 400A 1.0 ID = 200A 0.5 Ciss 3 2 101 7 5 3 Coss 2 VGS = 0V 0 Crss 100 –1 0 1 10 2 3 5 7 10 2 3 5 7 10 2 3 5 7 102 ID = 100A 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb. 2009 3 MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE GATE CHARGE CHARACTERISTICS (TYPICAL) 103 ID = 200A SOURCE CURRENT IS (A) GATE-SOURCE VOLTAGE VGS (V) 20 16 VDD = 60V 12 VDD = 80V 8 4 0 2 102 7 5 3 2 0.6 0.7 0.8 0.9 1.0 SOURCE-DRAIN VOLTAGE VSD (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 SWITCHING TIME (ns) 3 td(off) 2 tr td(on) 102 tf 7 5 Conditions: VDD = 80V VGS = ±15V RG = 6.3Ω Tch = 125°C Inductive load 3 2 101 1 10 101 2 3 5 7 102 2 3 td(on) tr 103 7 5 3 2 tf Conditions: VDD = 80V VGS = ±15V ID = 200A Tch = 125°C Inductive load 102 7 5 3 2 0 10 20 30 40 50 60 70 DRAIN CURRENT ID (A) GATE RESISTANCE RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 3 2 Esw(off) 100 Esw(on) 7 5 Err 3 2 Conditions: VDD = 80V VGS = ±15V RG = 6.3Ω Tch = 125°C Inductive load 10–1 7 5 3 2 10–2 1 10 td(off) 3 2 101 5 7 103 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) Tch = 125°C Tch = 25°C 3 GATE CHARGE QG (nC) 7 5 SWITCHING LOSS (mJ/pulse) VGS = 0V 7 5 101 0.5 0 200 400 600 800 1000 1200 1400 1600 1800 103 FREE-WHEEL DIODE FORWARD CHARACTERISTICS Chip (TYPICAL) 2 3 5 7 102 2 3 5 7 103 DRAIN CURRENT ID (A) 7 5 3 2 101 7 5 Esw(off) 3 2 100 Esw(on) 7 5 3 2 10–1 Conditions: 7 5 VDD = 80V 3 VGS = ±15V 2 ID = 200A –2 10 0 10 20 Err Tch = 125°C Inductive load 30 40 50 60 70 GATE RESISTANCE RG (Ω) Feb. 2009 4 MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Irr (A), trr (ns) 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(ch-c) 7 5 trr Irr 102 7 5 3 2 Conditions: VDD = 80V VGS = ±15V RG = 6.3Ω Tch = 25°C Inductive load 101 7 5 3 2 100 1 10 2 3 5 7 102 2 3 7 5 3 2 10–1 7 5 3 2 3 2 10–2 10–2 7 5 Single pulse 3 2 Tch = 25°C 10–3 5 7 103 10–1 7 5 Per unit base = Rth(ch-c) = 0.19K/W 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) SOURCE CURRENT IS (A) CHIP LAYOUT (110) (97) 90.8 57.8 47.2 24.8 P 49.2 1 TrUP 13 TrVP TrWP TrUN Th 12 TrVN (90) (80) 14 (67) 51.8 29.4 N 7 TrWN LABEL SIDE 6 U V W 25.4 58.4 91.4 Feb. 2009 5