Dc DXT2222A Technical specifications of npn epitaxial planar transistor Datasheet

DC COMPONENTS CO., LTD.
R
DXT2222A
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier and high
-speed, medium-power switching applications.
SOT-89
Pinning
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
1 = Base
2 = Collector
3 = Emitter
Characteristic
Symbol
Rating
Collector-Base Voltage
VCBO
75
V
VCES
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Total Power Dissipation
PD
1.2
W
Junction Temperature
TJ
+150
o
-55 to +150
o
TSTG
1
Unit
Collector-Emitter Voltage
Storage Temperature
.102(2.60)
.095(2.40)
.167(4.25)
.159(4.05)
Absolute Maximum Ratings(TA=25oC)
.020(0.51)
.014(0.36)
2
3
.060(1.52)
.058(1.48)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
75
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
40
-
-
V
IC=10mA
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
V
IE=10µA
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
DC Current Gain(1)
Transition Frequency
(1)Pulse Test: Pulse Width
Test Conditions
IC=10µA
ICBO
-
-
10
nA
VCB=60V
ICEX
-
-
10
nA
VCB=60V, VEB(off)=3V
IEBO
-
-
50
nA
VEB=3V
VCE(sat)1
-
-
0.3
V
IC=150mA, IB=15mA
VCE(sat)2
-
-
1
V
IC=500mA, IB=50mA
VBE(sat)1
-
-
1.2
V
IC=150mA, IB=15mA
VBE(sat)2
-
-
2
V
IC=500mA, IB=50mA
hFE1
35
-
-
-
IC=100µA, VCE=10V
hFE2
50
-
-
-
IC=1mA, VCE=10V
hFE3
75
-
-
-
IC=10mA, VCE=10V
hFE4
100
-
300
-
IC=150mA, VCE=10V
hFE5
40
-
-
-
IC=500mA, VCE=10V
hFE6
50
-
-
-
fT
300
-
-
MHz
380µs, Duty Cycle
2%
IC=150mA, VCE=1V
VCE=20V, f=100MHz, IC=20mA
Similar pages