Freescale MRF7S21170HSR3 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF7S21170H
Rev. 7, 2/2012
RF Power Field Effect Transistors
MRF7S21170HR3
MRF7S21170HSR3
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used
in Class AB and Class C for PCN--PCS/cellular radio and WLL applications.
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 50 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
 Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW Output
Power
 Pout @ 1 dB Compression Point ≃ 170 Watts CW
Features
 100% PAR Tested for Guaranteed Output Power Capability
 Characterized with Series Equivalent Large--Signal Impedance Parameters
 Internally Matched for Ease of Use
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Optimized for Doherty Applications
 In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
2110--2170 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--04
NI--880
MRF7S21170HR3
CASE 465C--03
NI--880S
MRF7S21170HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
C
Case Operating Temperature
TC
150
C
Operating Junction Temperature (1,2)
TJ
225
C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 170 W CW
Case Temperature 73C, 25 W CW
RJC
0.31
0.36
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2006--2008, 2011--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 372 Adc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1400 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGG(Q)
4.5
5.4
6.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.72 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.9
—
pF
Output Capacitance
(VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
703
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 2167.5 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
D
29
31
—
%
PAR
5.7
6.1
—
dB
ACPR
—
--37
--35
dBc
IRL
—
--15
--9
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
(continued)
MRF7S21170HR3 MRF7S21170HSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110--2170 MHz Bandwidth
Video Bandwidth @ 170 W PEP Pout where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
25
—
Gain Flatness in 60 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
0.4
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 170 W CW

—
1.95
—

Delay
—
1.7
—
ns
Part--to--Part Insertion Phase Variation @ Pout = 170 W CW
f = 2140 MHz, Six Sigma Window

—
18
—

Gain Variation over Temperature
(--30C to +85C)
G
—
0.015
—
dB/C
P1dB
—
0.01
—
dB/C
Average Group Delay @ Pout = 170 W CW, f = 2140 MHz
Output Power Variation over Temperature
(--30C to +85C)
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor, Inc.
3
Z17
R1
VBIAS
VSUPPLY
R2
+
C1
Z7
C2
C8
R3
RF
INPUT Z1
C10
C12
C13
Z9
C4
Z2
Z3
Z4
Z5
Z6
C3
C5
Z10
Z8
Z11
Z12
DUT
C6
Z13
Z14
C14
C15
Z15
C17
RF
Z16 OUTPUT
C18
C16
Z18
C7
Z1
Z2*
Z3*
Z4*
Z5*
Z6
Z7
Z8
Z9
Z10
0.250 x 0.083 Microstrip
0.090 x 0.083 Microstrip
0.842 x 0.083 Microstrip
0.379 x 0.083 Microstrip
0.307 x 0.083 Microstrip
0.156 x 0.787 Microstrip
1.160 x 0.080 Microstrip
0.119 x 0.787 Microstrip
0.077 x 0.880 Microstrip
0.459 x 1.000 Microstrip
Z11
Z12*
Z13*
Z14*
Z15*
Z16
Z17, Z18
PCB
C9
C11
0.060 x 0.760 Microstrip
0.129 x 0.083 Microstrip
0.436 x 0.083 Microstrip
0.490 x 0.083 Microstrip
0.275 x 0.083 Microstrip
0.230 x 0.083 Microstrip
0.900 x 0.080 Microstrip
Taconic TLX8--0300, 0.030, r =2.55
* Variable for tuning
Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
100 pF Chip Capacitor
ATC100B101JT500XT
ATC
C2, C3, C7, C8, C17, C18
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C4, C15
0.3 pF Chip Capacitors
ATC100B0R3BT500XT
ATC
C5
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C6
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C9, C10, C11, C12
10 F Chip Capacitors
C5750X5R1H106MT
TDK
C13
470 F, 63 V Electrolytic Capacitor, Radial
477KXM063M
Illinois Capacitor
C14
0.4 pF Chip Capacitor
ATC100B0R4BT500XT
ATC
C16
0.1 pF Chip Capacitor
ATC100B0R1BT500XT
ATC
R1, R2
10 k, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10 , 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF7S21170HR3 MRF7S21170HSR3
4
RF Device Data
Freescale Semiconductor, Inc.
C13
R2
R1
C1
C8
C2
C10 C12
R3
C17
C5
C3
C6
CUT OUT AREA
C4
C14
C15
C9
C16
C18
C11
C7
MRF7S21170H
Rev 0
Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor, Inc.
5
Gps
Gps, POWER GAIN (dB)
16
34
15
14
13
12
32
D
30
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
IRL
11
10
28
--5
0
--10
--1
PARC
9
2060
--2
2080
2100
2120
2140
2160
2180
2200
--15
--20
--3
2220
--25
IRL, INPUT RETURN LOSS (dB)
36
PARC (dB)
17
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
16
15
14
42
Gps
40
D
13
12
38
VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability (CCDF)
IRL
11
10
36
--5
--2
--10
--3
--4
PARC
9
2060
2080
2100
2120
2140
2160
2180
2200
--15
--20
--5
2220
--25
IRL, INPUT RETURN LOSS (dB)
44
PARC (dB)
17
D, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 84 Watts Avg.
18
--10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 2100 mA
Gps, POWER GAIN (dB)
17
1750 mA
16
1400 mA
15
1050 mA
700 mA
14
13
1
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
400
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--20
2100 mA
--30
IDQ = 700 mA
--40
1400 mA
--50
--60
1750 mA
1050 mA
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S21170HR3 MRF7S21170HSR3
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--20
--30
--40
3rd Order
--50
5th Order
7th Order
--60
1
10
400
100
0
VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1400 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
--10
--20
IM3--L
--30
IM3--U
--40
IM5--U
--50
--60
IM7--U
IM5--L
IM7--L
1
100
10
Pout, OUTPUT POWER (WATTS) PEP
TWO--TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON THE CCDF (dB)
1
54
Ideal
0
48
--1
42
--1 dB = 43.335 W
--2
36
--2 dB = 61.884 W
--3
30
--3 dB = 83.111 W
--4
--5
Actual
24
VDD = 28 Vdc, IDQ = 1400 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
20
40
60
100
80
D DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
--10
18
120
Pout, OUTPUT POWER (WATTS)
19
VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz Single--Carrier
W--CDMA, Input Signal PAR = 7.5 dB, ACPR @ 5 MHz
Offset in 3.84 MHz Integrated Bandwidth
--30
Uncorrected, Upper and Lower
--40
DPD Corrected
No Memory Correction
--50
--60
Gps
18
25_C
TC = --30_C
40
85_C
16
30
20
15
VDD = 28 Vdc
IDQ = 1400 mA
f = 2140 MHz
D
DPD Corrected, with Memory Correction
13
41
42
43
44
45
46
47
48
49
50
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
50
85_C
25_C
17
14
--70
40
60
--30_C
1
10
100
10
D DRAIN EFFICIENCY (%)
--20
Gps, POWER GAIN (dB)
ACPR, UPPER AND LOWER RESULTS (dBc)
Figure 9. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
0
400
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor, Inc.
7
TYPICAL CHARACTERISTICS
17
Gps, POWER GAIN (dB)
IDQ = 1400 mA
f = 2140 MHz
16
15
14
VDD = 24 V
28 V
13
0
100
32 V
200
280
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. Single--Carrier W--CDMA Spectrum
MRF7S21170HR3 MRF7S21170HSR3
8
RF Device Data
Freescale Semiconductor, Inc.
Zo = 10 
f = 2220 MHz
Zload
Zsource
f = 2060 MHz
f = 2220 MHz
f = 2060 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg.
f
MHz
Zsource

Zload

2060
4.57 -- j10.70
1.02 -- j3.54
2080
4.57 -- j10.38
0.99 -- j3.34
2100
4.57 -- j10.06
0.96 -- j3.14
2120
4.52 -- j9.72
0.93 -- j2.94
2140
4.40 -- j9.42
0.92 -- j2.76
2160
4.15 -- j9.12
0.91 -- j2.59
2180
4.44 -- j8.82
0.89 -- j2.42
2200
4.19 -- j8.53
0.88 -- j2.25
2220
4.12 -- j8.23
0.88 -- j2.09
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor, Inc.
9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
61
P6dB = 53.89 dBm (244 W)
61
59
58
P3dB = 53.56 dBm (226 W)
57
56
P1dB = 52.75 dBm
(188 W)
55
54
Actual
53
VDD = 28 Vdc, IDQ = 1400 m, Pulsed CW
12 sec(on), 10% Duty Cycle, f = 2140 MHz
52
51
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
60
62
Ideal
32
33
34
35
36
37
38
39
40
41
42
43
60
59
58
P3dB = 54.65 dBm (290 W)
57
56
P1dB = 53.54 dBm
(226 W)
55
Actual
54
VDD = 32 Vdc, IDQ = 1400 mA, Pulsed CW
12 sec(on), 10% Duty Cycle, f = 2140 MHz
53
44
52
33
34
35
Pin, INPUT POWER (dBm)
36
37
38
39
40
41
42
43
44
45
Pin, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
P3dB
Ideal
P6dB = 54.88 dBm (307 W)
Zsource

Zload

4.43 -- j11.85
0.81 -- j2.87
Figure 16. Pulsed CW Output Power
versus Input Power @ 28 V
Test Impedances per Compression Level
P3dB
Zsource

Zload

4.43 -- j11.85
0.72 -- j2.87
Figure 17. Pulsed CW Output Power
versus Input Power @ 32 V
MRF7S21170HR3 MRF7S21170HSR3
10
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor, Inc.
11
MRF7S21170HR3 MRF7S21170HSR3
12
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor, Inc.
13
MRF7S21170HR3 MRF7S21170HSR3
14
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2006
 Initial Release of Data Sheet
1
June 2006
 Added Class C to description of parts, pg. 1
 Changeded “” to “--” in the Device Output Signal Par bullet, pg. 1
 Changed typ value from 9 to 18 in Part--to--Part Phase Variation characteristic description in Table 4, Typical
Performances, p. 2
 Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12, p. 7
2
Aug. 2006
 Added Greater Negative Source bullet to Features section, p. 1
 Corrected Fig. 14, Single--Carrier W--CDMA Spectrum, to 3.84 MHz, p. 7
3
Sept. 2006
 Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1
 Added “Insertion” to Part--to--Part Phase Variation characteristic description in Table 4, Typical Performances,
p. 2
 Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical
Performances, p. 2
 Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value
from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1, Test Circuit Schematic, p. 3
 Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations
and Values, p. 3
 Added Figure 10, Digital Predistortion Correction, p. 6
 Corrected Fig. 15, Single--Carrier W--CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7
 Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9
 Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9
4
May 2007
 Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard, p. 1
 Added “Optimized for Doherty Applications” bullet to Features section, p. 1
 Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
 Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for VGS(Q),
and added Fixture Gate Quiescent Voltage, VGG(Q) to On Characteristics table, p. 2
 Updated verbiage in Typical Performances table, p. 3
 Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers
and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4
 Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 7
 Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 8
 Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test Signal, updated
to include output power level at functional test, p. 8
(continued)
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor, Inc.
15
REVISION HISTORY (continued)
Revision
Date
5
Apr. 2008
Description
 Corrected On Characteristics table ID value for VGS(th) from 270 Adc to 372 Adc and VDS(on) from
2.7 Adc to 3.72 Adc; tightened VGS(th) minimum and maximum values to match production
test values, p. 2
 Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
 Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test
Signal, to better represent production test signal, p. 8
6
Mar. 2011
 Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
 Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
 Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14
respectively after Fig. 13 removed)
 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 15
7
Feb. 2012
 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2.
 Replaced Case Outline 465B--03, Issue D, with 465B--04, Issue F, p. 1, 11--12. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension K in mm from 4.44--5.21 to 4.45--5.21, changed
dimension M in mm from 22.15--22.55 to 22.15--22.56, changed dimension N in mm from 19.3--22.6 to
22.12--22.58, changed dimension Q in mm from 3--3.51 to 3.00--3.51, changed dimension R and S in mm
from 13.1--13.3 to 13.08--13.34.
 Replaced Case Outline 465C--02, Issue D, with 465C--03, Issue E, p. 1, 13--14. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension M in mm from 22.15--22.55 to 22.15--22.56, changed
dimension N in mm from 19.3--22.6 to 22.12--22.58, changed dimension R and S in mm from 13.1--13.3 to
13.08--13.34.
MRF7S21170HR3 MRF7S21170HSR3
16
RF Device Data
Freescale Semiconductor, Inc.
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
 Freescale Semiconductor, Inc. 2006--2008, 2011--2012. All rights reserved.
MRF7S21170HR3 MRF7S21170HSR3
Document
RF
DeviceNumber:
Data MRF7S21170H
Rev. 7, 2/2012
Freescale
Semiconductor, Inc.
17
Similar pages