MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • • • • • PIN 3 COLLECTOR (OUTPUT) PIN 1 BASE (INPUT) R1 R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc Collector Current − Continuous SC−59 CASE 318D STYLE 1 XXX MG G SOT−23 CASE 318 STYLE 6 1 1 MAXIMUM RATINGS (TA = 25°C) Rating XX MG G IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc XX MG G SC−70/SOT−323 CASE 419 STYLE 3 XX M SC−75 CASE 463 STYLE 1 XX M SOT−723 CASE 631AA STYLE 1 XM 1 SOT−1123 CASE 524AA STYLE 1 1 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 XXX M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 4 1 Publication Order Number: DTA144E/D MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Table 1. ORDERING INFORMATION Part Marking Package Shipping† 6C SC−59 (Pb−Free) 3000 / Tape & Reel MMUN2113LT1G, SMMUN2113LT1G* A6C SOT−23 (Pb−Free) 3000 / Tape & Reel MMUN2113LT3G, NSVMMUN2113LT3G* A6C SOT−23 (Pb−Free) 10000 / Tape & Reel MUN5113T1G, SMUN5113T1G* 6C SC−70/SOT−323 (Pb−Free) 3000 / Tape & Reel MUN5113T3G 6C SC−70/SOT−323 (Pb−Free) 10000 / Tape & Reel DTA144EET1G, NSVDTA144EET1G* 6C SC−75 (Pb−Free) 3000 / Tape & Reel DTA144EM3T5G 6C SOT−723 (Pb−Free) 8000 / Tape & Reel NSBA144EF3T5G E SOT−1123 (Pb−Free) 8000 / Tape & Reel Device MUN2113T1G, SMUN2113T1G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. PD, POWER DISSIPATION (mW) 300 250 (1) SC−75 and SC−70/SOT−323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−1123; 100 mm2, 1 oz. copper trace (5) SOT−723; Minimum Pad 200 (1) (2) (3) (4) (5) 150 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve www.onsemi.com 2 MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 230 338 1.8 2.7 mW THERMAL CHARACTERISTICS (SC−59) (MUN2113) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) PD mW/°C (Note 1) (Note 2) RqJA 540 370 °C/W Thermal Resistance, (Note 1) Junction to Lead (Note 2) RqJL 264 287 °C/W TJ, Tstg −55 to +150 °C 246 400 2.0 3.2 mW Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SOT−23) (MMUN2113L) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) PD mW/°C (Note 1) (Note 2) RqJA 508 311 °C/W Thermal Resistance, (Note 1) Junction to Lead (Note 2) RqJL 174 208 °C/W TJ, Tstg −55 to +150 °C 202 310 1.6 2.5 mW Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5113) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) PD mW/°C (Note 1) (Note 2) RqJA 618 403 °C/W Thermal Resistance, (Note 1) Junction to Lead (Note 2) RqJL 280 332 °C/W TJ, Tstg −55 to +150 °C 200 300 1.6 2.4 mW Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−75) (DTA144EE) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient PD (Note 1) (Note 2) Junction and Storage Temperature Range mW/°C RqJA 600 400 °C/W TJ, Tstg −55 to +150 °C 260 600 2.0 4.8 mW THERMAL CHARACTERISTICS (SOT−723) (DTA144EM3) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient PD (Note 1) (Note 2) Junction and Storage Temperature Range 1. 2. 3. 4. FR−4 @ Minimum Pad. FR−4 @ 1.0 x 1.0 Inch Pad. FR−4 @ 100 mm2, 1 oz. copper traces, still air. FR−4 @ 500 mm2, 1 oz. copper traces, still air. www.onsemi.com 3 mW/°C RqJA 480 205 °C/W TJ, Tstg −55 to +150 °C MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 254 297 2.0 2.4 mW THERMAL CHARACTERISTICS (SOT−1123) (NSBA144EF3) Total Device Dissipation TA = 25°C (Note 3) (Note 4) Derate above 25°C (Note 3) (Note 4) Thermal Resistance, Junction to Ambient PD (Note 3) (Note 4) Thermal Resistance, Junction to Lead (Note 3) Junction and Storage Temperature Range 1. 2. 3. 4. mW/°C RqJA 493 421 °C/W RqJL 193 °C/W TJ, Tstg −55 to +150 °C FR−4 @ Minimum Pad. FR−4 @ 1.0 x 1.0 Inch Pad. FR−4 @ 100 mm2, 1 oz. copper traces, still air. FR−4 @ 500 mm2, 1 oz. copper traces, still air. Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max − − 100 − − 500 − − 0.1 50 − − 50 − − 80 140 − − − 0.25 − 1.2 0.8 3.0 1.6 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (Note 5) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 5) (IC = 5.0 mA, VCE = 10 V) Collector−Emitter Saturation Voltage (Note 5) (IC = 10 mA, IB = 0.3 mA) VCE(sat) Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) Input Voltage (on) (VCE = 0.3 V, IC = 2.0 mA) Vi(on) Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH Vdc Vdc Vdc Vdc Vdc Input Resistor R1 32.9 47 61.1 Resistor Ratio R1/R2 0.8 1.0 1.2 kW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 4 MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 TYPICAL CHARACTERISTICS MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3 1000 IC/IB = 10 TA = −25°C hFE, CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 1 25°C 75°C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA = 75°C 25°C 10 40 −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain 100 8 IC, COLLECTOR CURRENT (mA) f = 10 kHz lE = 0 A TA = 25°C 7 6 5 4 3 2 1 TA = 75°C 25°C −25°C 10 1 0.1 0.01 VO = 5 V 0.001 0 0 10 0 50 20 30 40 VR, REVERSE VOLTAGE (V) 1 2 3 4 VO = 2 V TA = −25°C 25°C 75°C 1 0.1 0 6 7 8 9 Figure 5. Output Current vs. Input Voltage 100 10 5 Vin, INPUT VOLTAGE (V) Figure 4. Output Capacitance Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) 10 9 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current www.onsemi.com 5 50 10 MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 TYPICAL CHARACTERISTICS − NSBA144EF3 1000 25°C IC/IB = 10 150°C 25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 1 150°C 0.1 −55°C 100 10 VCE = 10 V 0.01 1 0 10 20 30 40 0.1 50 10 1 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain 7 100 6 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25°C 5 4 3 2 1 0 150°C −55°C 10 25°C 1 0.1 0.01 VO = 5 V 0.001 0 10 20 30 40 0 50 4 8 12 16 20 24 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) −55°C −55°C 25°C 10 150°C 1 VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current www.onsemi.com 6 50 28 MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR C A MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 L A1 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 7 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 www.onsemi.com 8 mm Ǔ ǒinches MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 9 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 10 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 HE 2 2X 2X b e C 0.08 X Y SIDE VIEW TOP VIEW 3X DIM A b b1 C D E e HE L L2 L 1 3X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR L2 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 PACKAGE DIMENSIONS SOT−1123 CASE 524AA ISSUE C −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− 1 3 E 2 TOP VIEW A c DIM A b b1 c D E e HE L L2 HE SIDE VIEW 3X STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR b L2 MILLIMETERS MIN MAX 0.34 0.40 0.15 0.28 0.10 0.20 0.07 0.17 0.75 0.85 0.55 0.65 0.35 0.40 0.95 1.05 0.185 REF 0.05 0.15 0.08 X Y e 2X 3X b1 L BOTTOM VIEW SOLDERING FOOTPRINT* 1.20 3X 0.34 0.26 1 0.38 2X 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 12 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative DTA144E/D