ON ECH8693R-TL-W Power mosfet Datasheet

ECH8693R
Power MOSFET
for 1-2 Cells Lithium-ion Battery Protection
24 V, 7 mΩ, 14 A, Dual N-Channel
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This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines.
Best suited for 1-2 cells Lithium-ion Battery applications.
VDSS
Features
 Low On-Resistance
 2.5 V drive
 Common-Drain Type
 ESD Diode-Protected Gate
 Built-in Gate Protection Resistor
 Pb-Free, Halogen Free and RoHS compliance
RDS(on) Max
7 mΩ @ 4.5 V
7.5 mΩ @ 4.0 V
24 V
9.1 mΩ @ 3.1 V
ELECTRICAL CONNECTION
N-Channel
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Symbol
Value
Unit
Drain to Source Voltage
VDSS
24
V
Gate to Source Voltage
VGSS
12.5
V
Drain Current (DC)
ID
14
A
Drain Current (Pulse)
PW  10 s, duty cycle  1%
IDP
60
A
Power Dissipation
Surface mounted on ceramic substrate
2
(900 mm  0.8 mm) 1 unit
Total Dissipation
Surface mounted on ceramic substrate
2
(900 mm  0.8 mm)
1.4
W
PT
1.5
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should
not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
© Semiconductor Components Industries, LLC, 2016
December 2016 - Rev. 3
1
2
3
4
MARKING
PD
Junction to Ambient
Surface mounted on ceramic substrate
2
(900 mm  0.8 mm) 1 unit
14 A
10.5 mΩ @ 2.5 V
Typical Applications
 1-2 cells Lithium-ion Battery Charging and Discharging Switch
Parameter
ID Max
Symbol
Value
RJA
89.2
1
UQ
LOT No.
SOT-28FL / ECH8
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
Unit
C/W
Publication Order Number :
ECH8693R/D
ECH8693R
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2)
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
VGS(th)
gFS
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
RDS(on)
Value
Conditions
min
typ
ID = 1 mA, VGS = 0 V
VDS = 20 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
24
VDS = 10 V, ID = 1 mA
0.5
Unit
max
V
1
A
1
A
1.3
VDS = 10 V, ID = 5 A
8
V
S
ID = 5 A, VGS = 4.5 V
ID = 5 A, VGS = 4.0 V
4.4
5.6
7
m
4.6
5.8
7.5
m
ID = 5 A, VGS = 3.1 V
5.2
6.5
9.1
m
6
7.5
10.5
m
ID = 2.5 A, VGS = 2.5 V
Turn-ON Delay Time
td(on)
545
ns
Rise Time
tr
525
ns
Turn-OFF Delay Time
td(off)
18.65
s
Fall Time
tf
22.2
s
Turn-ON Delay Time
td(on)
545
ns
Rise Time
tr
525
ns
Turn-OFF Delay Time
td(off)
1,130
s
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
See Fig. 1 (Note 3)
See Fig. 2 (Note 3)
410
s
13
nC
3
nC
VDS = 10 V, VGS = 4.5 V, ID = 14 A
2.4
IS = 14 A, VGS = 0 V
0.78
nC
1.2
V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 3 : The fall switching time is dependent on the input pulse width.
Fig.1 Switching Time Test Circuit 1
4.5V
0V
VDD=10V
VIN
4.5V
0V
ID=7A
RL=1.4
VOUT
VIN
D
PW=10s
D.C.1%
50
VDD=10V
VIN
ID=7A
RL=1.4
VOUT
VIN
D
PW 10ms
D.C.1%
Rg
G
P.G
Fig.2 Switching Time Test Circuit 2
Rg
G
ECH8693R
P.G
S
Rg=1k
50
Rg=1k
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2
ECH8693R
S
ECH8693R
Ta=25C
VDS=10V
10.0
9.0
4.0
7.0
6.0
5.0
4.0
3.0
2.0
2.0
--25C
6.0
8.0
25C
8.0
.5V
=1
V GS
Ta=75
C
4.5V
10.0
ID -- VGS
11.0
Drain Current, ID -- A
Drain Current, ID -- A
12.0
2.5V
4.0V 3
.1V 1.8
V
ID -- VDS
14.0
1.0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1.0
0
0.5
RDS(on) -- VGS
20
Ta=25C
18
16
14
12
5A
10
ID=2.5A
8
6
4
2
0
2
0
4
6
8
8
C
--25
C
25
3
2
6
A
I =5
4.5V, D
=
V GS
4
2
--40
--20
0.4
0.5
0.6
0.7
0.8
40
60
3
2
Switching Time, S/W Time -- μs
3.0
2.5
2.0
1.5
1.0
0.5
2
4
6
8
10
120
140
160
12
VDD=10V
VGS=4.5V
PW=10μs
tf
10k
7
5
3
2
1k
7
5
td(on)
tr
3
10k
3.5
0
100
2
3
5
7
1.0
2
3
5
7
10
Source Current, IS -- A
VDS=10V
ID=14A
4.0
80
td (off)
100
0.1
0.9
VGS -- Qg
4.5
Gate to Source Voltage, VGS -- V
20
S/W Time -- ID
Forward Source to Drain Voltage, VSD -- V
0
0
2
0.3
=5A
, ID
V
0
.
=4
VGS
=2
VGS
100k
7
5
Switching Time, S/W Time -- ns
C
75
Ta=
Forward Source Current, IS -- A
3
2
0.01
0.2
=3
V GS
2.5A
I =
.5V, D
Ambient Temperature, Ta -- C
10
7
5
0.1
7
5
2.5
5A
I D=
,
V
.1
10
0
--60
VGS=0V
3
2
2.0
12
10
IS -- VSD
1.0
7
5
1.5
RDS(on) -- Ta
14
Gate to Source Voltage, VGS -- V
3
2
1.0
Gate to Source Voltage, VGS -- V
Static Drain to Source
On-State Resistance, RDS(on) -- m
Static Drain to Source
On-State Resistance, RDS(on) -- m
Drain to Source Voltage, VDS -- V
1k
S/W Time -- Input Pulse Width
VDD=10V
VGS=4.5V
ID=7A
td(off)
tf
100
14
10
tr
1
td(on)
0.1
0.01
0.1
1.0
10
Input Pulse Width -- ms
Total Gate Charge, Qg -- nC
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3
100
ECH8693R
PD -- Ta
1.6
1.5
1.2
To
t
al
1.0
0.8
1u
Di
ni
0.6
t
ss
ip
at
Drain Current, ID -- A
Power Dissipation, PD -- W
1.4
io
n
0.4
0.2
0
0
20
40
60
80
100
120
140 150
Thermal Resistance, RJA -- ºC/W
Ambient Temperature, Ta -- C
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
SOA
2
Surface mounted on ceramic substrate
(900mm20.8mm)
100
7
5
3
2
IDP=60A(PW10s)
100
s
1m
s
10
ms
10
0m
s
ID=14A
10
7
5
3
2
1.0
7
5
3
2
DC
op
Operation in this
area is limited by RDS(on).
er
at
0.1
7 Ta=25C
5
Single pulse
3
2 Surface mounted on ceramic substrate
2
0.01 (900mm 0.8mm) 1unit
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
ion
5 7 10
2 3
5 7100
Drain to Source Voltage, VDS -- V
RJA -- Pulse Time
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
ulse
gle P
Sin
0.01
7
5
3
2
0.001
0.000001 2
Surface mounted on ceramic substrate
(900mm20.8mm) 1unit
3
5 70.00001 2
3
5 7 0.0001 2
3
5 7 0.001
2
3
5 7 0.01
Pulse Time, PT -- s
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4
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
ECH8693R
PACKAGE DIMENSIONS
unit : mm
SOT-28FL / ECH8
CASE 318BF
ISSUE O
to
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
Recommended
Soldering Footprint
7 : Drain
8 : Drain
2.8
0.6
0.4
0.65
ORDERING INFORMATION
Device
ECH8693R-TL-W
Marking
Package
Shipping (Qty / Packing)
UQ
SOT-28FL / ECH8
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the ECH8693R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects. Please contact sales for use except the designated application.
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5