LMH6640 www.ti.com SNOSAA0B – FEB 2004 – REVISED MARCH 2013 LMH6640 TFT-LCD Single, 16V Rail-to-Rail High Output Operational Amplifier Check for Samples: LMH6640 FEATURES 1 • 23 • • • • • • • • • • • • DESCRIPTION (VS = 16V, RL= 2 kΩ to V+/2, 25°C, Typical Values Unless Specified) Supply current (no load) 4 mA Output resistance (closed loop 1 MHz) 0.35Ω −3 dB BW (AV = 1) 190 MHz Settling time (±0.1%, 2 VPP) 35 ns Input common mode voltage −0.3V to 15.1V Output voltage swing 100 mV from rails Linear output current ±100 mA Total harmonic distortion (2 VPP, 5 MHz) −64 dBc Fully characterized for: 5V & 16V No output phase reversal with CMVR exceeded Differential gain (RL = 150Ω) 0.12% Differential phase (RL = 150Ω) 0.12° The LMH™6640 is a voltage feedback operational amplifier with a rail-to-rail output drive capability of 100 mA. Employing TI’s patented VIP10 process, the LMH6640 delivers a bandwidth of 190 MHz at a current consumption of only 4mA. An input common mode voltage range extending to 0.3V below the V− and to within 0.9V of V+, makes the LMH6640 a true single supply op-amp. The output voltage range extends to within 100 mV of either supply rail providing the user with a dynamic range that is especially desirable in low voltage applications. The LMH6640 offers a slew rate of 170 V/µs resulting in a full power bandwidth of approximately 28 MHz with 5V single supply (2 VPP, −1 dB). Careful attention has been paid to ensure device stability under all operating voltages and modes. The result is a very well behaved frequency response characteristic for any gain setting including +1, and excellent specifications for driving video cables including total harmonic distortion of −64 dBc @ 5 MHz, differential gain of 0.12% and differential phase of 0.12°. APPLICATIONS • • • • • • TFT panel VCOM buffer amplifier Active filters CD/DVD ROM ADC buffer amplifier Portable video Current sense buffer RF2 300: RF1 3 k: 10V - 16V 4 - RS 5 1 10: LMH6640 VCOM POTENTIAL 3 + 2 TFT PANEL ±160 mA Figure 1. Typical Application as a TFT Panel VCOM Driver 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. LMH is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2004–2013, Texas Instruments Incorporated LMH6640 SNOSAA0B – FEB 2004 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings ESD Tolerance (1) (2) Human Body Model 2 KV Machine Model 200V VIN Differential ±2.5V Input Current ±10 mA Supply Voltages (V+ – V−) 18V + − Voltage at Input/Output Pins V +0.8V, V −0.8V Storage Temperature Range −65°C to +150°C Junction Temperature (3) +150°C Soldering Information Infrared or Convection (20 sec.) 235°C Wave Soldering (10 sec.) 260°C (1) (2) (3) Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For specifications and the test conditions, see the Electrical Characteristics. Human body model, 1.5 kΩ in series with 100 pF. Machine Model, 0Ω in series with 200 pF. The maximum power dissipation is a function of TJ(MAX), θJA , and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX)-TA ) / θJA. All numbers apply for packages soldered directly onto a PC board. Operating Ratings (1) Supply Voltage (V+ – V−) 4.5V to 16V Operating Temperature Range Package Thermal Resistance (2) −40°C to +85°C (2) 5-Pin SOT-23 (1) (2) 2 265°C/W Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150 °C Short circuit test is a momentary test. Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms. The maximum power dissipation is a function of TJ(MAX), θJA , and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX)-TA ) / θJA. All numbers apply for packages soldered directly onto a PC board. Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 LMH6640 www.ti.com SNOSAA0B – FEB 2004 – REVISED MARCH 2013 5V Electrical Characteristics Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 5V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2. Boldface limits apply at temperature extremes. (1) Symbol Parameter −3 dB Bandwidth BW Min (2) Conditions Typ (3) AV = +1 (RL = 100Ω) 150 AV = −1 (RL = 100Ω) 58 Max (2) Units MHz BW0.1 dB 0.1 dB Gain Flatness AV = −3 18 MHz FPBW Full Power Bandwidth AV = +1, VOUT = 2 VPP, −1 dB 28 MHz LSBW -3 dB Bandwidth AV = +1, VO = 2 VPP (RL = 100Ω) 32 MHz GBW Gain Bandwidth Product AV = +1, (RL = 100Ω) 59 MHz SR Slew Rate AV = −1 170 V/μs en Input Referred Voltage Noise in (4) Input Referred Current Noise f = 10 kHz 23 f = 1 MHz 15 f = 10 kHz 1.1 f = 1 MHz 0.7 THD Total Harmonic Distortion f = 5 MHz, VO = 2 VPP, AV = +2 RL = 1 kΩ to V+/2 –65 ts Settling Time VO = 2 VPP, ±0.1%, AV = −1 35 VOS Input Offset Voltage (5) IB Input Bias Current IOS Input Offset Current CMVR Common Mode Input Voltage Range CMRR ≥ 50 dB −1.2 −2.6 −3.25 μA 34 800 1400 nA –0.3 –0.2 –0.1 4.0 3.6 4.1 72 90 AVOL Large Signal Voltage Gain VO = 4 VPP, RL = 2 kΩ to V+/2 86 82 95 VO = 3.75 VPP, RL = 150Ω to V+/2 74 70 78 RL = 2 kΩ to V+/2 4.90 4.94 RL = 150Ω to V+/2 4.75 4.80 ISC Output Short Circuit Current (6) 0.10 RL = 150Ω to V+/2 0.20 0.25 Sourcing to V /2 100 75 130 Sinking from V+/2 100 70 130 Output Current VO = 0.5V from either Supply PSRR Power Supply Rejection Ratio 4V ≤ V+ ≤ 6V IS Supply Current No Load 3.7 RIN Common Mode Input Resistance AV = +1, f = 1 kHz, RS = 1 MΩ 15 (2) (3) (4) (5) (6) dB 0.06 + V mA +75/−90 72 V dB RL = 2 kΩ to V+/2 IOUT (1) ns mV V− ≤ VCM ≤ V+ −1.5V Output Swing Low dBc 5 7 Common Mode Rejection Ratio Output Swing High pA/√Hz 1 CMRR VO nV/√Hz mA 80 dB 5.5 8.0 mA MΩ Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. Parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. All limits are specified by testing or statistical analysis. Typical Values represent the most likely parametric norm. Slew rate is the average of the rising and falling slew rates Positive current corresponds to current flowing into the device. Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150 °C Short circuit test is a momentary test. Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms. Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 3 LMH6640 SNOSAA0B – FEB 2004 – REVISED MARCH 2013 www.ti.com 5V Electrical Characteristics (continued) Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 5V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2. Boldface limits apply at temperature extremes. (1) Symbol Parameter Conditions Min (2) Typ (3) CIN Common Mode Input Capacitance AV = +1, RS = 100 kΩ 1.7 ROUT Output Resistance Closed Loop RF = 10 kΩ, f = 1 kHz, AV = −1 0.1 RF = 10 kΩ, f = 1 MHz, AV = −1 0.4 DG Differential Gain NTSC, AV = +2 RL = 150Ω to V+/2 0.13 DP Differential Phase NTSC, AV = +2 RL = 150Ω to V+/2 0.10 4 Submit Documentation Feedback Max (2) Units pF Ω % deg Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 LMH6640 www.ti.com SNOSAA0B – FEB 2004 – REVISED MARCH 2013 16V Electrical Characteristics Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 16V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2. Boldface limits apply at temperature extremes. (1) Symbol Parameter −3 dB Bandwidth BW Min (2) Conditions Typ (3) AV = +1 (RL = 100Ω) 190 AV = −1 (RL = 100Ω) 60 Max (2) Units MHz BW0.1 dB 0.1 dB Gain Flatness AV = −2.7 20 MHz LSBW -3 dB Bandwidth AV = +1, VO = 2 VPP (RL = 100Ω) 35 MHz GBW Gain Bandwidth Product AV = +1, (RL = 100Ω) 62 MHz 170 V/μs (4) AV = −1 SR Slew Rate en Input Referred Voltage Noise in Input Referred Current Noise f = 10 kHz 23 f = 1 MHz 15 f = 10 kHz 1.1 f = 1 MHz 0.7 THD Total Harmonic Distortion f = 5 MHz, VO = 2 VPP, AV = +2 RL = 1 kΩ to V+/2 –64 ts Settling Time VO = 2 VPP, ±0.1%, AV = −1 35 VOS Input Offset Voltage IB Input Bias Current IOS Input Offset Current CMVR Common Mode Input Voltage Range (5) CMRR ≥ 50 dB −1 −2.6 −3.5 μA 34 800 1800 nA –0.3 −0.2 −0.1 15.0 14.6 15.1 72 90 AVOL Large Signal Voltage Gain VO = 15 VPP, RL = 2 kΩ to V+/2 86 82 95 VO = 14 VPP, RL = 150Ω to V+/2 74 70 78 15.85 15.90 15.45 15.78 + RL = 150Ω to V /2 RL = 2 kΩ to V+/2 Output Swing Low RL = 150Ω to V+/2 ISC Output Short Circuit Current (6) ns mV V− ≤ VCM ≤ V+ −1.5V RL = 2 kΩ to V+/2 dBc 5 7 Common Mode Rejection Ratio Output Swing High pA/√Hz 1 CMRR VO nV/√Hz dB dB 0.10 0.15 0.21 0.55 Sourcing to V+/2 60 30 95 Sinking from V+/2 50 15 75 V V mA IOUT Output Current VO = 0.5V from either Supply PSRR Power Supply Rejection Ratio 15V ≤ V+ ≤ 17V IS Supply Current No Load RIN Common Mode Input Resistance AV = +1, f = 1 kHz, RS = 1 MΩ 32 MΩ CIN Common Mode Input Capacitance AV = +1, RS = 100 kΩ 1.7 pF (1) (2) (3) (4) (5) (6) ±100 72 mA 80 4 dB 6.5 7.8 mA Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. Parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. All limits are specified by testing or statistical analysis. Typical Values represent the most likely parametric norm. Slew rate is the average of the rising and falling slew rates Positive current corresponds to current flowing into the device. Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150 °C Short circuit test is a momentary test. Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms. Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 5 LMH6640 SNOSAA0B – FEB 2004 – REVISED MARCH 2013 www.ti.com 16V Electrical Characteristics (continued) Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 16V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2. Boldface limits apply at temperature extremes. (1) Symbol ROUT Parameter Output Resistance Closed Loop Min (2) Conditions Typ (3) RF = 10 kΩ, f = 1 kHz, AV = −1 0.1 RF = 10 kΩ, f = 1 MHz, AV = −1 0.3 DG Differential Gain NTSC, AV = +2 RL = 150Ω to V+/2 0.12 DP Differential Phase NTSC, AV = +2 RL = 150Ω to V+/2 0.12 Max (2) Units Ω % deg CONNECTION DIAGRAM 5 Pin SOT-23 Top View See Package Number DBV0005A 6 Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 LMH6640 www.ti.com SNOSAA0B – FEB 2004 – REVISED MARCH 2013 Typical Performance Characteristics − + At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified. IS vs. VS for Various Temperature IS vs. VCM for Various Temperature 7 7 125°C 6.5 VS = ±8V 6.5 6 6 5.5 5.5 85°C 5 85°C IS (mA) IS (mA) 125°C 4.5 4 25°C 5 4.5 25°C 4 3.5 3.5 3 3 -40°C 2.5 2.5 2 4 6 8 10 12 14 16 -40°C 2 -10 -8 2 18 -6 -4 -2 2 4 6 8 Figure 2. Figure 3. IB vs. VS for Various Temperature IB vs. VS for Various Temperature -0.5 10 -0.5 -0.75 -40°C 0.75 25°C 25°C -40°C -1 IB (PA) -1 IB (PA) 0 VCM (V) VS (V) -1.25 -1.5 -1.25 -1.5 85°C 85°C 125°C -1.75 125°C -1.75 POSITIVE INPUT NEGATIVE INPUT -2 -2 2 4 8 6 10 12 14 16 18 4 2 8 6 10 12 14 16 VS (V) VS (V) Figure 4. Figure 5. VOS vs. VS for Various Temperature (Typical Unit) IOS vs. VS for Various Temperature -1 18 0 -10 -1.25 -20 -40°C 25°C 85°C -30 IOS (nA) VOS (mV) -1.5 25°C -1.75 -40 -50 125°C 85°C -2 -60 -40°C 125°C -70 -2.25 -80 -2.5 -90 2 4 6 8 10 12 14 16 18 VS (V) 2 4 6 8 10 12 14 16 18 VS (V) Figure 6. Figure 7. Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 7 LMH6640 SNOSAA0B – FEB 2004 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) − + At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified. Negative Output Saturation Voltage vs. VS for Various Temperature 350 125°C 250 85°C 200 150 -40°C 100 25°C 50 125°C RL = 150: 250 - RL = 150: 300 300 SATURATION VOLTAGE FROM V (mV) + SATURATION VOLTAGE FROM V (mV) Positive Output Saturation Voltage vs. VS for Various Temperature 85°C 200 150 -40°C 100 25°C 50 0 0 2 4 6 8 10 12 14 16 18 2 4 6 8 VS (V) 12 14 16 18 VS (V) Figure 8. Figure 9. Output Sinking Saturation Voltage vs. ISINKING for Various Temperature Output Sourcing Saturation Voltage vs. ISOURCING for Various Temperature 10 10 VS = 16V VS = 16V -40°C VOUT FROM V (V) -40°C 1 + 1 - VOUT FROM V (V) 10 125°C 85°C 0.1 125°C 85°C 0.1 25°C 25°C -40°C -40°C 0.01 0.01 1 10 100 1 1000 ISINKING (mA) 1000 Figure 10. Figure 11. Input Current Noise vs. Frequency Input Voltage Noise vs. Frequency 50 VS = 5V VS = 5V INPUT VOLTAGE NOISE (nV/ Hz) INPUT CURRENT NOISE (pA/ Hz) 100 ISOURCING (mA) 4 3 2 1 0 40 30 20 10 0 1 10 100 1000 FREQUENCY (kHz) 1 10 100 1000 FREQUENCY (kHz) Figure 12. 8 10 Figure 13. Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 LMH6640 www.ti.com SNOSAA0B – FEB 2004 – REVISED MARCH 2013 Typical Performance Characteristics (continued) − + At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified. Gain vs. Frequency Normalized (PIN= −30 dBm) Gain vs. Frequency Normalized (PIN=−30dBm) 5 5 AV = -1 0 -5 AV = -5 -15 -20 AV = -2 -25 -30 -35 -40 AV = +10 -10 GAIN (dB) GAIN (dB) -5 AV = -10 -10 AV = +1 0 AV = +5 -15 -20 AV = +2 -25 -30 -35 VS = 16V -40 RL = 100: -45 VS = 16V RL = 100: -45 100k 1M 10M 100M 100k 1G 1M FREQUENCY (Hz) 100M 1G Figure 14. Figure 15. Gain vs. Frequency for Various VS (PIN = −30 dBm) Gain vs. Frequency for Various VS (PIN = −30 dBm) 6 6 5V 5V 0 3 -6 0 -12 -3 GAIN (dB) GAIN (dB) 10M FREQUENCY (Hz) -18 16V -24 16V -6 5V -9 5V -30 -36 -12 AV = -1 -15 RL = 100: RL = 100: -42 100k AV = +1 -18 1M 10M 100M 100k 1G 1M 10M 100M 1G FREQUENCY (Hz) FREQUENCY (Hz) Figure 16. Figure 17. Open Loop Gain & Phase vs. Frequency for Various Temperature (PIN = −30 dBm) Relative Gain vs. Frequency for Various Temperature (PIN = −10 dBm) 70 140 60 120 5 85°C 0 100 50 PHASE -40°C 80 40 -5 40 GAIN 20 10 GAIN (dB) 60 20 PHASE (°) GAIN (dB) 85°C 30 25°C 0 0 -20 -10 -40°C -20 -40 -30 1M -60 10M 100M 25°C 1G FREQUENCY (Hz) -10 -15 -20 AV = +1 RL = 100: -25 100k 1M 10M 100M 1G FREQUENCY (Hz) Figure 18. Figure 19. Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 9 LMH6640 SNOSAA0B – FEB 2004 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) + − At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified. Large Signal Transition Large Signal Transition 1.5 1.5 RL = 2 k: 1 0.5 0.5 OUTPUT (V) OUTPUT (V) RL = 2 k: 1 0 0 -0.5 -0.5 -1 -1 -1.5 -1.5 TIME (10 ns/DIV) TIME (10 ns/DIV) Figure 21. Small Signal Pulse Response Small Signal Pulse Response 50 mV/DIV 50 mV/DIV Figure 20. AV = +1 AV = -1 VS = 5V VS = 5V RL = 2 k: RL = 2 k: CL = 10 pF CL = 10 pF 50 ns/DIV Large Signal Pulse Response Large Signal Pulse Response 0.5 V/DIV Figure 23. 0.5 V/DIV 10 50 ns/DIV Figure 22. AV = +1 AV = +1 VS = +5V VS = 16V RL = 100: RL = 100: 50 ns/DIV 50 ns/DIV Figure 24. Figure 25. Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 LMH6640 www.ti.com SNOSAA0B – FEB 2004 – REVISED MARCH 2013 Typical Performance Characteristics (continued) − + At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified. PSRR vs. Frequency CMRR vs. Frequency 100 0 90 10 20 70 30 CMRR (dB) PSRR (dB) POSITIVE 80 60 NEGATIVE 50 40 40 50 60 30 70 +5V 20 80 VS = 5V 10 AV = +1 0 10 100 90 +16V 100 1k 10k 1M 100k 10M 10 100 1k FREQUENCY (Hz) 1M 10M Figure 27. Closed Loop Output Resistance vs. Frequency Harmonic Distortion -40 1.0 AV = -1 5V THD RS = RF = 10 k: -50 0.8 16V DISTORTION (dBc) CLOSED LOOP OUTPUT RESISTANCE (:) 100k FREQUENCY (Hz) Figure 26. 0.9 10k 0.7 0.6 0.5 0.4 0.3 0.2 3RD -60 -70 2ND -80 f = 5 MHz 4TH AV = +2 -90 RL = 1 k: 0.1 VS = 5V -100 0.0 100 1k 10k 100k 1M 10M 1 FREQUENCY (Hz) 1.5 2 2.5 3 3.5 4 OUTPUT VOLTAGE (VPP) Figure 28. Figure 29. 0.1 dB Gain Flatness vs. Frequency Normalized Output Power vs. Input Power (AV = +1) 15 0.2 10 MHz 0.1 16V -0.1 GAIN (dB) 5V -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 1 MHz 10 OUTPUT POWER (dBm) 0 25 MHz 5 50 MHz 0 100 MHz -5 AV = -3 @ VS = 5V AV = -2.7 @ VS = 16V -0.8 10k 100k 1M -10 10M 100M FREQUENCY (Hz) -10 -5 0 5 10 15 INPUT POWER (dBm) Figure 30. Figure 31. Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 11 LMH6640 SNOSAA0B – FEB 2004 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) + − At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified. Differential Gain/Phase vs. IRE 0.15 0.1 AV = +2 RL = 150: f = 3.58 MHz 0.06 DIFF GAIN (%) 0.08 VS = 5V 0.09 0.03 0.06 0.04 0.02 PHASE 0 0 -0.03 -0.02 -0.06 -0.04 -0.09 DIFF PHASE (°) 0.12 -0.06 GAIN -0.12 -0.08 -0.15 -0.1 -100 -75 -50 -25 0 25 50 75 100 IRE Figure 32. 12 Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 LMH6640 www.ti.com SNOSAA0B – FEB 2004 – REVISED MARCH 2013 APPLICATION INFORMATION Application Notes With its high output current and speed, one of the major applications for the LMH6640 is the VCOM driver in a TFT panel. This application is a specially taxing one because of the demands it places on the operational amplifier’s output to drive a large amount of bi-directional current into a heavy capacitive load while operating under unity gain condition, which is a difficult challenge due to loop stability reasons. For a more detailed explanation of what a TFT panel is and what its amplifier requirements are, please see the Application Notes section of the LM6584 found on the web at: http://www.ti.com/lit/pdf/snosb08 Because of the complexity of the TFT VCOM waveform and the wide variation in characteristics between different TFT panels, it is difficult to decipher the results of circuit testing in an actual panel. The ability to make simplifying assumptions about the load in order to test the amplifier on the bench allows testing using standard equipment and provides familiar results which could be interpreted using standard loop analysis techniques. This is what has been done in this application note with regard to the LMH6640’s performance when subjected to the conditions found in a TFT VCOM application. Figure 33, shows a typical simplified VCOM application with the LMH6640 buffering the VCOM potential (which is usually around ½ of panel supply voltage) and looking into the simplified model of the load. The load represents the cumulative effect of all stray capacitances between the VCOM node and both row and column lines. Associated with the capacitances shown, is the distributed resistance of the lines to each individual transistor switch. The other end of this R-C ladder is driven by the column driver in an actual panel and here is driven with a low impedance MOSFET driver (labeled “High Current Driver”) for the purposes of this bench test to simulate the effect that the column driver exerts on the VCOM load. The modeled TFT VCOM load, shown in Figure 33, is based on the following simplifying assumptions in order to allow for easy bench testing and yet allow good matching results obtained in the actual application: • The sum of all the capacitors and resistors in the R-C ladder is the total VCOM capacitance and resistance respectively. This total varies from panel to panel; capacitance could range from 50 nF-200 nF and the resistance could be anywhere from 20Ω-100Ω. • The number of ladder sections has been reduced to a number (4 sections in this case) which can easily be put together in the lab and which behaves reasonably close to the actual load. In this example, the LMH6640 was tested under the simulated conditions of total 209 nF capacitance and 54Ω as shown in Figure 33. RF2 300: RF1 3 k: RS + 10: VOUT R1 R2 R3 18: 18: 18: 47n C3 47n C4 IOUT 68n C1 47n C2 HIGH CURRENT DRIVER Figure 33. LMH6640 in a VCOM Buffer Application with Simulated TFT Load RS is sometimes used in the panel to provide additional isolation from the load while RF2 provides a more direct feedback from the VCOM. RF1, RF2, and RS are trimmed in the actual circuit with settling time and stability tradeoffs considered and evaluated. When tested under simulated load conditions of Figure 33, here are the resultant voltage and current waveforms at the LMH6640 output: Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 13 LMH6640 SNOSAA0B – FEB 2004 – REVISED MARCH 2013 VOUT (5V/Div) www.ti.com VOUT (5V/DIV) HIGH CURRENT DRIVER (5V/Div) 0 0 HIGH CURRENT DRIVE (5V/DIV) 0 0 IOUT (100 mA/Div) (POSITIVE IS SOURCING) IOUT (100 mA/DIV) (POSITIVE IS SOURCING 0 0 2 Ps/DIV 5 Ps/DIV Figure 34. VCOM Output, High Current Drive Waveform, & LMH6640 Output Current Waveforms Figure 35. Expanded View of Figure 34 Waveforms showing LMH6640 Current Sinking ½ Cycle As can be seen, the LMH6640 is capable of supplying up to 160 mA of output current and can settle the output in 4.4 μs. The LMH6640 is a cost effective amplifier for use in the TFT VCOM application and is made even more attractive by its large supply voltage range and high output current. The combination of all these features is not readily available in the market, especially in the space saving SOT-23 5 pin package. All this performance is achieved at the low power consumption of 65 mW which is of utmost importance in today’s battery driven TFT panels. 14 Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 LMH6640 www.ti.com SNOSAA0B – FEB 2004 – REVISED MARCH 2013 REVISION HISTORY Changes from Revision A (March 2013) to Revision B • Page Changed layout of National Data Sheet to TI format .......................................................................................................... 14 Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LMH6640 15 PACKAGE OPTION ADDENDUM www.ti.com 25-Feb-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) LMH6640MF/NOPB NRND SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 AH1A LMH6640MFX/NOPB NRND SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 AH1A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 5-Dec-2014 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) LMH6640MF/NOPB SOT-23 DBV 5 1000 178.0 8.4 LMH6640MFX/NOPB SOT-23 DBV 5 3000 178.0 8.4 Pack Materials-Page 1 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 3.2 3.2 1.4 4.0 8.0 Q3 3.2 3.2 1.4 4.0 8.0 Q3 PACKAGE MATERIALS INFORMATION www.ti.com 5-Dec-2014 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMH6640MF/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LMH6640MFX/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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