ON NSVB124XPDXV6T1G Complementary bias resistor transistor Datasheet

MUN5334DW1,
NSBC124XPDXV6
Complementary Bias
Resistor Transistors
R1 = 22 kW, R2 = 47 kW
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NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
PIN CONNECTIONS
(3)
(2)
R1

Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
R2
Q1
Q2
R2
Features




(1)
(4)
R1
(5)
(6)
MARKING DIAGRAMS
6
SOT−363
CASE 419B
34 M G
G
1
MAXIMUM RATINGS
(TA = 25C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
7
Vdc
Collector Current − Continuous
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SOT−563
CASE 463A
1
34
M
G
34 M G
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MUN5334DW1T1G,
NSVMUN5334DW1T1G
SOT−363
3,000/Tape & Reel
NSBC124XPDXV6T1G,
NSVB124XPDXV6T1G
SOT−563
4,000/Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
DTC124XP/D
MUN5334DW1, NSBC124XPDXV6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
187
256
1.5
2.0
mW
MUN5334DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
PD
RqJA
mW/C
670
490
C/W
250
385
2.0
3.0
mW
MUN5334DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
Junction and Storage Temperature Range
PD
RqJA
RqJL
TJ, Tstg
493
325
188
208
mW/C
C/W
C/W
−55 to +150
C
357
2.9
mW
mW/C
NSBC124XPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
PD
RqJA
350
C/W
NSBC124XPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
Junction and Storage Temperature Range
PD
RqJA
TJ, Tstg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0  1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
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2
500
4.0
250
−55 to +150
mW
mW/C
C/W
C
MUN5334DW1, NSBC124XPDXV6
ELECTRICAL CHARACTERISTICS (TA = 25C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
−
−
100
−
−
500
−
−
0.13
50
−
−
50
−
−
80
150
−
−
−
0.25
−
−
0.8
0.9
−
−
−
−
1.3
1.3
−
−
−
−
0.2
4.9
−
−
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 4)
(IC = 5.0 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage (Note 4)
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA) (NPN)
(VCE = 5.0 V, IC = 100 mA) (PNP)
Vi(off)
Input Voltage (On)
(VCE = 0.2 V, IC = 3.0 mA) (NPN)
(VCE = 0.2 V, IC = 3.0 mA) (PNP)
Vi(on)
Output Voltage (On)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
Input Resistor
R1
15.4
22
28.6
Resistor Ratio
R1/R2
0.38
0.47
0.56
4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle  2%.
PD, POWER DISSIPATION (mW)
400
350
300
250
200
(1) SOT−363; 1.0  1.0 Inch Pad
(2) SOT−563; Minimum Pad
(1) (2)
150
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
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3
V
Vdc
Vdc
Vdc
Vdc
kW
MUN5334DW1, NSBC124XPDXV6
1
1000
IC/IB = 10
VCE = 10 V
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5334DW1, NSBC124XPDXV6
25C
0.1
150C
−55C
0.01
0
10
20
30
40
100
−55C
10
1
0.1
50
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
100
2.8
2.4
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25C
2
1.6
1.2
0.8
0.4
0
10
20
30
40
50
−55C
10
1
25C
0.1
0.01
150C
VO = 5 V
0
4
8
12
16
20
24
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
100
Figure 3. DC Current Gain
3.2
0
150C
25C
−55C
25C
10
1
150C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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4
50
28
MUN5334DW1, NSBC124XPDXV6
1
1000
IC/IB = 10
VCE = 10 V
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5334DW1, NSBC124XPDXV6
25C
150C
0.1
−55C
0.01
0
10
20
30
40
100
−55C
10
1
0.1
50
1
IC, COLLECTOR CURRENT (mA)
100
Figure 8. DC Current Gain
10
100
9
8
7
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25C
6
5
4
3
2
1
0
10
20
30
40
50
−55C
10
1
0.1
25C
0.01
150C
0.001
VO = 5 V
0
2
4
6
8
10
12
14
16
18
20
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
0
150C
25C
−55C
25C
10
1
150C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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5
50
22
MUN5334DW1, NSBC124XPDXV6
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
6
5
DIM
A
A1
A3
b
C
D
E
e
L
HE
4
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
M
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
A3
C
A
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
SC−88/SC70−6/SOT−363
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
MUN5334DW1, NSBC124XPDXV6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
D
−X−
6
5
1
e
2
A
4
E
−Y−
3
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
DIM
A
b
C
D
E
e
L
HE
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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DTC124XP/D