TIGER ELECTRONIC CO.,LTD TO-220F Plastic-Encapsulate Diodes MBRF1060, 70, 80, 90, 100CT TO-220F SCHOTTKY BARRIER RECTIFIER FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Value Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage MBRF10 MBRF10 MBRF10 MBRF10 60CT 70CT 80CT 90CT 100CT 60 70 80 90 100 V 42 49 56 63 70 V 10 A 120 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ IO IFSM PD RΘJA Average rectified output current Unit MBRF10 Non-Repetitive peak forward surge current 8.3ms half sine wave A,Nov,2010 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Symbol V(BR) IR VF(1) VF(2) Device Test conditions MBRF1060CT 60 MBRF1070CT 70 MBRF1080CT IR=0.1mA 90 MBRF10100CT 100 MBRF1060CT VR=60V MBRF1070CT VR=70V MBRF1080CT VR=80V MBRF1090CT VR=90V MBRF10100CT VR=100V MBRF1060CT MBRF1070-100CT MBRF1060-100CT Ctot Typ Max Unit V 80 MBRF1090CT 0.1 0.85 IF=10A V 0.95 150 VR=4V,f=1MHz MBRF1070-100CT mA 0.8 IF=5A MBRF1060CT Typical total capacitance Min pF 300 A,Nov,2010