APTM50UM13SAG Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Q1 G S VDSS = 500V RDSon = 13mΩ typ @ Tj = 25°C ID = 335A @ Tc = 25°C D Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 335 250 1340 ±30 15 3290 71 50 3000 Unit V A V mΩ W A July, 2006 G mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM50UM13SAG Rev 1 SK APTM50UM13SAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Test Conditions VGS = 0V VDS = 25V f = 1MHz IF VF trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Test Conditions IF = 240A VR = 133V di/dt = 800A/µs www.microsemi.com Max Unit µA mΩ V nA nF nC 21 42 100 4 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C mJ 4.16 6.32 mJ 4.64 Typ Tj = 25°C Tj = 125°C Tj = 125°C ns 96 Min 200 T c = 85°C IF = 240A IF = 480A IF = 240A Unit 420 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 335A, R G =0.8Ω VR=200V Typ 42.2 8.24 0.42 800 Max 400 2000 15 5 ±300 200 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 335A, R G = 0.8Ω DC Forward Current Diode Forward Voltage 13 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 335A R G = 0.8Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 3 VGS = 10V VBus = 250V ID =335A Series diode ratings and characteristics IRM Min Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 167.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V VGS = 0V,VDS = 500V Max 750 1000 240 1.1 1.4 0.9 31 60 240 1000 Unit V µA A 1.15 V ns July, 2006 IDSS Characteristic nC 2–7 APTM50UM13SAG Rev 1 Symbol APTM50UM13SAG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage Test Conditions Min 600 Tj = 25°C Tj = 125°C VR=600V IF = 360A IF = 720A IF = 360A Reverse Recovery Time IF = 360A VR = 400V Qrr Reverse Recovery Charge di/dt = 1000A/µs Symbol Characteristic Min Transistor Series diode Parallel diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Wt Package Weight 360 1.6 1.9 1.4 130 170 1.32 5.5 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Thermal and package characteristics To heatsink For terminals M6 M5 Max 1500 3000 T c = 70°C trr Torque Typ 2500 -40 -40 -40 3 2 Typ Unit V µA A 1.8 V ns µC Max 0.038 0.23 0.16 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g www.microsemi.com 3–7 APTM50UM13SAG Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTM50UM13SAG www.microsemi.com 4–7 APTM50UM13SAG Rev 1 July, 2006 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM50UM13SAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.03 0.9 0.7 0.025 0.02 0.015 0.5 0.3 0.01 0.005 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 7.5V 600 6.5V 400 6V 200 5.5V 5 10 15 20 VDS, Drain to Source Voltage (V) 480 400 320 240 T J=25°C 160 T J=125°C TJ=-55°C 0 0 25 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 350 Normalized to VGS=10V @ 167.5A 1.3 ID, DC Drain Current (A) 1.2 V GS=10V 1.1 1 V GS=20V 0.9 0.8 300 250 200 150 100 50 0 120 240 360 480 600 I D, Drain Current (A) 720 www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 0 5–7 APTM50UM13SAG Rev 1 RDS(on) Drain to Source ON Resistance 0 560 80 5V 0 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 640 7V ID, Drain Current (A) ID, Drain Current (A) VGS=10&15V 1.4 Transfert Characteristics 720 800 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=167.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 10000 1.2 1.0 0.9 0.8 0.7 1000 100 us limited by RDSon 100 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Coss 10000 1000 Crss 100 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 VDS=100V I D=335A TJ =25°C 12 V DS =250V 10 VDS=400V 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) July, 2006 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 6–7 APTM50UM13SAG Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM50UM13SAG APTM50UM13SAG Delay Times vs Current Rise and Fall times vs Current 160 90 VDS=333V RG=0.8Ω TJ=125°C L=100µH 70 50 tf 80 tr 40 td(on) 30 VDS=333V RG=0.8Ω TJ=125°C L=100µH 120 td(off) t r and tf (ns) td(on) and t d(off) (ns) 110 10 0 60 140 220 300 380 460 I D, Drain Current (A) 60 540 140 220 300 380 460 ID, Drain Current (A) 540 Switching Energy vs Gate Resistance Switching Energy vs Current V DS=333V RG=0.8Ω T J=125°C L=100µH 10 8 Switching Energy (mJ) Switching Energy (mJ) 12 Eon Eoff 6 4 2 20 60 140 220 300 380 460 I D, Drain Current (A) 12 Eon 8 Eoff 0 540 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 ZCS VDS=333V D=50% RG=0.8Ω TJ=125°C TC=75°C 100 0 100 ZVS Hard switching 150 200 250 300 I D, Drain Current (A) 4 6 8 10 12 14 350 Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTM50UM13SAG Rev 1 July, 2006 50 2 Gate Resistance (Ohms) 400 200 Eoff 16 4 0 Frequency (kHz) VDS=333V ID=335A T J=125°C L=100µH 24