UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE RANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain * Collector Dissipation: Pc (max) =350mW * Pb-free plating product number: MMBTA42L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBTA42-AE3-R MMBTA42L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBTA42L-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 1D Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-004,C MMBTA42 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Collector Dissipation (TA=25℃) PC 350 mW Collector Current IC 500 mA ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) ICBO IEBO DC Current Gain hFE Current Gain Bandwidth Product Collector Base Capacitance fT Ccb TEST CONDITIONS Ic=100μA, IE=0 Ic=1mA, IB=0 IE=100μA, Ic=0 Ic=20mA, IB=2mA Ic=20mA, IB=2mA VCB=200V, IE=0 VBE=6V, Ic=0 VCE=10V, Ic=1mA VCE=10V, Ic=10mA VCE=10V, Ic=30mA VCE=20V, Ic=10mA, f=100MHz VCB=20V, IE=0, f=1MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 300 300 6 TYP MAX 0.2 0.90 100 100 80 80 80 50 UNIT V V V V V nA nA 300 3 MHz pF 2 of 4 QW-R206-004,C MMBTA42 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS DC Current Gain vs. Output Current 1K 1K VCE=5V 500 Ta=150℃ Ta=150℃ Ta=25℃ 100 50 50 20 20 10 10 5 5 2 1 2 1 2 5 10 20 50 100 200 500 Collector Current, IC (mA) Ta=-50℃ 1 Collector Emitter Saturation vs. Collector Current 2.0 1.8 0.9 1.6 0.8 1.4 0.7 1.2 0.6 1.0 Ta=-50℃ Ta=25℃ 0.4 Ta=25℃ 0.6 0.3 0.4 Ta=150℃ 0.2 Ta=-50℃ 0.2 5 10 20 50 100 200 500 Collector Current, IC (mA) VCE=5V 05 Ta=150℃ 2 Collector Emitter Saturation vs. Collector Current 1.0 IC/IB=10 0.8 Ta=25℃ 200 Ta=-50℃ 1 VCE=10V 500 200 100 DC Current Gain vs. Output Current 0.0 0.1 0.0 1 2 5 10 20 50 100 200 500 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.1 1 10 Collector Current, IC (mA) 100 3 of 4 QW-R206-004,C MMBTA42 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-004,C