IRF IRHNJ57234SE Simple drive requirement Datasheet

PD-93837D
IRHNJ57234SE
JANSR2N7555U3
250V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/704
5
TECHNOLOGY
™
Product Summary
Part Number
IRHNJ57234SE
Radiation Level RDS(on)
100K Rads (Si)
0.4Ω
ID
QPL Part Number
10A JANSR2N7555U3
SMD-0.5
International Rectifier’s R5 TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
10
6.4
40
75
0.6
±20
58
10
7.5
2.4
-55 to 150
300 (for 5s)
1.0 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
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1
01/27/15
IRHNJ57234SE, JANSR2N7555U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
Test Conditions
250
—
—
V
VGS = 0V, ID = 1.0mA
—
0.30
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.40
Ω
2.5
3.0
—
—
—
—
—
—
4.5
—
10
25
V
S
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
32
11
16
25
100
35
30
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1016
157
9.0
—
—
—
nA
nC
ns
nH
pF
VGS = 12V, ID = 6.4A Ã
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 6.4A Ã
VDS = 200V ,VGS = 0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 10A
VDS = 125V
VDD = 125V, ID = 10A,
VGS =12V, RG = 7.5Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
10
40
A
VSD
t rr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
300
3.1
V
ns
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 10A, VGS = 0V Ã
Tj = 25°C, IF = 10A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
6.6
1.67
—
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNJ57234SE, JANSR2N7555U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
Test Conditions
V
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 200V, VGS=0V
0.404
Ω
VGS = 12V, ID = 6.4A
—
0.40
Ω
VGS = 12V, ID = 6.4A
—
1.2
V
VGS = 0V, ID = 10A
100K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
On-State Resistance (SMD-0.5)
Diode Forward Voltage
„
Min
Max
250
2.0
—
—
—
—
4.5
100
-100
10
nA
—
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS =
@VGS =
@VGS =
@VGS =
@VGS =
0V
-5V
-10V
-15V
-20V
38 ± 7.5%
250
250
250
250
250
300 ± 7.5%
61 ± 5%
330 ± 7.5%
31 ± 10%
250
250
250
250
240
84 ± 5%
350 ± 7.5%
28 ± 7.5%
250
250
225
175
50
Bias VDS (V)
38 ± 5%
300
250
200
150
100
50
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ57234SE, JANSR2N7555U3
100
Pre-Irradiation
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
1
0.1
5.0V
0.01
0.01
10
1
10
100
VDS , Drain-to-Source Voltage (V)
0.1
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
10
TJ = 25 ° C
1
V DS = 15
50V
20µs PULSE WIDTH
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
2.5
7
1
VDS , Drain-to-Source Voltage (V)
100
6
20µs PULSE WIDTH
TJ = 150 °C
0.01
0.1
Fig 1. Typical Output Characteristics
5
5.0V
1
20µs PULSE WIDTH
TJ = 25 °C
0.001
0.001
0.1
0.1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
Drain-to-Source
Current(A)
(A)
I D , I Drain
to Source Current
D’
TOP
ID = 10A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1600
Ciss
1200
Coss
800
Crss
400
0
1
10
20
VGS , Gate-to-Source Voltage (V)
2000
IRHNJ57234SE, JANSR2N7555U3
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
TJ = 150 ° C
10
TJ = 25 ° C
1
V GS = 0 V
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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30
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.6
20
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
0.1
0.4
VDS = 200V
VDS = 125V
VDS = 50V
15
0
100
ID = 10A
1.2
OPERATION IN THIS AREA LIMITED BY RDS(ON)
10
100µs
1
1ms
10ms
0.1
0.01
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNJ57234SE, JANSR2N7555U3
Pre-Irradiation
10.0
VGS
8.0
ID , Drain Current (A)
RD
VDS
D.U.T.
RG
6.0
+
-VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
VDS
2.0
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
15V
D.U.T.
RG
VGS
20V
DRIVER
L
VDS
IAS
tp
+
V
- DD
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
IRHNJ57234SE, JANSR2N7555U3
100
ID
4.5A
8.0A
BOTTOM 10A
TOP
80
60
40
20
0
25
50
75
100
125
Starting TJ , Junction Temperature( °C)
150
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNJ57234SE, JANSR2N7555U3
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 1.15mH
Peak IL = 10A, VGS = 12V
 ISD ≤ 10A, di/dt ≤ 394A/µs,
VDD ≤ 250V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.5
IR WORLD HEADQUARTERS: 101 N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
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TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 01/2015
8
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