ON NDF02N60ZG N-channel power mosfet Datasheet

NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET
600 V, 4.8 W
Features
•
•
•
•
•
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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VDSS
RDS(on) (MAX) @ 1 A
600 V
4.8 W
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
NDF
VDSS
NDD
600
D (2)
V
Continuous Drain Current RqJC
(Note 1)
ID
2.4
2.2
A
Continuous Drain Current RqJC
TA = 100°C (Note 1)
ID
1.6
1.4
A
Pulsed Drain Current, VGS @ 10 V
IDM
10
9
A
Power Dissipation RqJC
PD
24
57
W
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche Energy,
ID = 2.4 A
EAS
120
mJ
ESD (HBM)
(JESD 22−A114)
Vesd
2500
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 17)
VISO
Peak Diode Recovery (Note 2)
dv/dt
4.5
V/ns
Continuous Source Current (Body
Diode)
IS
2.4
A
Maximum Temperature for Soldering
Leads
TL
260
°C
TJ, Tstg
−55 to 150
°C
Operating Junction and
Storage Temperature Range
N−Channel
Unit
4500
G (1)
S (3)
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. ISD = 2.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
1
2
3
NDF02N60ZG,
NDF02N60ZH
TO−220FP
CASE 221AH
4
4
1
2
3
NDD02N60Z−1G
IPAK
CASE 369D
1 2
3
NDD02N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2014 − Rev. 8
1
Publication Order Number:
NDF02N60Z/D
NDF02N60Z, NDD02N60Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
Symbol
Value
Unit
NDF02N60Z
NDD02N60Z
RqJC
4.9
2.2
°C/W
(Note 3) NDF02N60Z
(Note 4) NDD02N60Z
(Note 3) NDD02N60Z−1
RqJA
51
41
80
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
600
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain−to−Source Leakage Current
VDS = 600 V, VGS = 0 V
Gate−to−Source Forward Leakage
25°C
V
0.6
IDSS
V/°C
1
150°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source On−Resistance
VGS = 10 V, ID = 1.0 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 50 mA
VGS(th)
Forward Transconductance
VDS = 15 V, ID = 1.2 A
gFS
±10
mA
4.0
4.8
W
4.0
4.5
V
ON CHARACTERISTICS (Note 5)
3.0
1.7
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
Output Capacitance (Note 6)
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Ciss
215
274
325
Coss
25
34
45
Reverse Transfer Capacitance (Note 6)
Crss
4.0
7.0
10
Total Gate Charge (Note 6)
Qg
5.0
10
16
Qgs
1.5
2.4
4.0
Qgd
3.5
5.3
8.0
Gate−to−Source Charge (Note 6)
Gate−to−Drain (“Miller”) Charge (Note 6)
VDD = 300 V, ID = 2.4 A,
VGS = 10 V
pF
nC
Plateau Voltage
VGP
6.4
V
Gate Resistance
Rg
4.9
W
td(on)
9.0
ns
tr
7.0
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 2.4 A,
VGS = 10 V, RG = 5 W
Fall Time
td(off)
15
tf
7.0
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 2.4 A, VGS = 0 V
VSD
Reverse Recovery Time
VGS = 0 V, VDD = 30 V
IS = 2.4 A, di/dt = 100 A/ms
trr
240
ns
Qrr
0.7
mC
Reverse Recovery Charge
1.6
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
6. Guaranteed by design.
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2
NDF02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
4.0
4.0
3.5
7.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
3.5
3.0
VGS = 10 V
2.5
6.5 V
2.0
6.0 V
1.5
1.0
5.5 V
0.5
0.0
0.0
VDS = 25 V
3.0
2.5
2.0
1.5
TJ = 25°C
1.0
TJ = 150°C
0.5
5.0 V
5.0
10.0
15.0
20.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
25.0
0.0
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
6.00
ID = 1 A
TJ = 25°C
5.50
5.25
5.00
4.75
4.50
4.25
4.00
3.75
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
Figure 3. On−Region versus Gate−to−Source
Voltage
2.50
2.25
2.00
ID = 1 A
VGS = 10 V
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
10
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
5.75
TJ = −55°C
150
TJ, JUNCTION TEMPERATURE (°C)
5.25
5.00
VGS = 10 V
TJ = 25°C
4.75
4.50
4.25
4.00
3.75
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
2.3
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1.15
ID = 1 mA
1.10
1.05
1.00
0.95
0.90
−50
Figure 5. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
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3
2.5
150
NDF02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
600
10
550
TJ = 25°C
VGS = 0 V
f = 1 MHz
C, CAPACITANCE (pF)
TJ = 150°C
1.0
TJ = 125°C
450
400
350
300
Ciss
250
200
150
100
50
0
0
50 100 150 200 250 300 350 400 450 500 550 600
0
5
10
15
20
25
30
35
40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
Figure 8. Capacitance Variation
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.10
Coss
Crss
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
350
QT
300
VDS
250
VGS
QGS
200
QGD
150
VDS = 300 V
ID = 2.4 A
TJ = 25°C
0
1
2
3
4
5
6
7
8
9
10
100
50
0
11
45
50
1.1
1.2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (mA)
500
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
10.0
1000
IS, SOURCE CURRENT (A)
t, TIME (ns)
VDD = 300 V
ID = 2.4 A
VGS = 10 V
100
td(off)
tr
tf
td(on)
10
TJ = 150°C
1.0
125°C
25°C
−55°C
1.0
1
10
0.1
0.3
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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NDF02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
100
VGS v 30 V
SINGLE PULSE
TC = 25°C
10
100 ms
1 ms
10 ms
1
dc
0.1
0.01
10 ms
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
1000
10
VGS v 30 V
SINGLE PULSE
TC = 25°C
1
100 ms
1 ms
10 ms
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10 ms
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDD02N60Z
Figure 13. Maximum Rated Forward Biased
Safe Operating Area NDF02N60Z
10
R(t) (C/W)
1
50% (DUTY CYCLE)
20%
10%
0.1
5%
2%
1%
RqJC = 2.2°C/W
Steady State
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (s)
Figure 14. Thermal Impedance (Junction−to−Case) for NDD02N60Z
R(t) (C/W)
100
10 50% (DUTY CYCLE)
20%
10%
5.0%
1
2.0%
1.0%
0.1
0.01
1E−06
RqJA = 41°C/W
Steady State
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD02N60Z
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5
1E+02
1E+03
NDF02N60Z, NDD02N60Z
10
50% (DUTY CYCLE)
R(t) (C/W)
1
20%
10%
5%
2%
0.1
1%
RqJC = 4.9°C/W
Steady State
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 16. Thermal Impedance (Junction−to−Case) for NDF02N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 17. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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6
1E+02
1E+03
NDF02N60Z, NDD02N60Z
ORDERING INFORMATION
Package
Shipping†
NDF02N60ZG
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDF02N60ZH
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDD02N60Z−1G
IPAK
(Pb−Free, Halogen−Free)
75 Units / Rail
NDD02N60ZT4G
DPAK
(Pb−Free, Halogen−Free)
2500 / Tape and Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
4
Drain
4
Drain
YWW
2N
60ZG
Gate
YWW
2N
60ZG
NDF02N60ZG
or
NDF02N60ZH
AYWW
Source
1 2 3
Gate Drain Source
Drain
TO−220FP
IPAK
A
Y
WW
G, H
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
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7
2
1 Drain 3
Gate Source
DPAK
NDF02N60Z, NDD02N60Z
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE F
A
E
B
P
E/2
0.14
Q
D
M
B A
A
H1
M
A1
C
NOTE 3
1 2 3
L
L1
3X
3X
SEATING
PLANE
b2
c
b
0.25
M
B A
M
C
A2
e
SIDE VIEW
FRONT VIEW
SECTION D−D
A
NOTE 6
NOTE 6
H1
D
D
A
SECTION A−A
ALTERNATE CONSTRUCTION
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8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE
MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.90
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.60
7.10
12.50
14.73
--2.80
3.00
3.40
2.80
3.20
NDF02N60Z, NDD02N60Z
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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9
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
NDF02N60Z, NDD02N60Z
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369AA
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NDF02N60Z/D