SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current - - 200 mA - 2.7 4.5 Ω VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number BSS138AKA Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] BSS138AKA %JL [1] BSS138AKA Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 60 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 200 mA VGS = 10 V; Tamb = 100 °C [1] - 125 mA - 800 mA [2] - 300 mW [1] - 360 mW - 1060 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 200 mA Source-drain diode IS source current [1] [2] Tamb = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa001 120 Pder (%) 017aaa002 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 Normalized total power dissipation as a function of ambient temperature BSS138AKA Product data sheet 0 - 75 125 175 Tamb (°C) Fig. 2. - 25 75 125 175 Tamb (°C) Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. 29 April 2015 25 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET aaa-006618 10 tp = 10 µs Limit RDSon = VDS/ID ID (A) 100 µs 1 ms 10-1 10 ms DC; Tsp = 25 °C 10-2 DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-3 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] BSS138AKA Product data sheet Min Typ Max Unit [1] - 350 400 K/W [2] - 300 340 K/W - - 115 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa661 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.2 0.25 0.1 0.05 0 0.02 0.01 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa662 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.2 0.25 0.1 0.05 0 10 10-3 0.02 0.01 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138AKA Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 A; VDS = VGS; Tj = 25 °C 0.8 1.2 1.5 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 60 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 3.5 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -3.5 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -0.5 µA VGS = 10 V; ID = 100 mA; pulsed; - 2.7 4.5 Ω - 5.5 9.2 Ω - 3 5.2 Ω - 4 13 Ω 320 - - mS IGSS RDSon gate leakage current drain-source on-state resistance tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C VGS = 10 V; ID = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 150 °C VGS = 4.5 V; ID = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C VGS = 2.5 V; ID = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C gfs forward transconductance VDS = 10 V; ID = 150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C Dynamic characteristics QG(tot) total gate charge VDS = 30 V; ID = 150 mA; VGS = 4.5 V; - 0.39 0.51 nC QGS gate-source charge Tj = 25 °C - 0.1 - nC QGD gate-drain charge - 0.1 - nC Ciss input capacitance VDS = 30 V; f = 1 MHz; VGS = 0 V; - 13 20 pF Coss output capacitance Tj = 25 °C - 2.6 - pF Crss reverse transfer capacitance - 1.1 - pF td(on) turn-on delay time VDS = 40 V; RL = 250 Ω; VGS = 10 V; - 5 10 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 6 - ns td(off) turn-off delay time - 36 72 ns BSS138AKA Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET Symbol Parameter tf fall time Conditions Min Typ Max Unit - 22 - ns 0.47 0.7 1.2 V Source-drain diode VSD source-drain voltage IS = 115 mA; VGS = 0 V; Tj = 25 °C 017aaa663 0.5 10 V 4.5 V ID (A) 0.4 017aaa664 10-3 3.5 V ID (A) 3V 10-4 0.3 min typ max 2.5 V 0.2 10-5 0.1 0 Fig. 6. VGS = 2 V 0 1 2 3 10-6 4 VDS (V) 0 0.5 1.0 1.5 VGS (V) 2.0 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage 017aaa665 10 2V RDSon (Ω) 2.5 V 017aaa666 12 3V RDSon (Ω) 8 8 6 4.5 V 4 VGS = 10 V 2 0 Tj = 150 °C 3.5 V 4 Tj = 25 °C 0 0.1 0.2 0.3 0.4 ID (A) 0 0.5 Tj = 25 °C Fig. 8. Product data sheet 2 4 6 8 10 VGS (V) ID = 0.15 A Drain-source on-state resistance as a function of drain current; typical values BSS138AKA 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa667 0.4 017aaa668 2.5 a ID (A) 2.0 0.3 1.5 0.2 1.0 0.1 Tj = 150 °C 0 0 0.5 Tj = 25 °C 1 2 3 VGS (V) 0 -60 4 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 C (pF) 1.5 180 aaa-006619 102 VGS(th) (V) Tj (°C) Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa669 2.0 0 Ciss max 10 typ 1.0 Coss min 1 0.5 0 -60 Crss 0 60 120 Tj (°C) 10-1 10-1 180 Fig. 12. Gate-source threshold voltage as a function of junction temperature Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V ID = 0.25 mA; VDS = VGS BSS138AKA 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET aaa-006620 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0.0 0.2 0.4 0.6 QG (nC) Fig. 15. Gate charge waveform definitions 0.8 ID = 150 mA; VDS = 30 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa672 0.5 IS (A) 0.4 0.3 0.2 0.1 0 Tj = 150 °C 0 0.4 Tj = 25 °C 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition BSS138AKA Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS138AKA Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version SOT23 References IEC JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline TO-236AB (SOT23) BSS138AKA Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) BSS138AKA Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BSS138AKA v.3 20150429 Product data sheet - BSS138AKA v.2 Modifications: • BSS138AKA v.2 20141103 Product data sheet - BSS138AKA v.1 BSS138AKA v.1 20130206 Product data sheet - - BSS138AKA Product data sheet Figure 14: x-axis scale corrected All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 16 BSS138AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ..................................................... 9 Quality information ............................................. 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 April 2015 BSS138AKA Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 16 / 16