GMT G5105TPU Low-noise step-up dc-dc converter Datasheet

G5105
Global Mixed-mode Technology Inc.
Low-Noise Step-up DC-DC Converter
Features
General Description
„
„
„
„
„
The G5105 boost converter in corporate high-performance, voltage-mode, fixed-frequency (at 1MHz),
pulse width modulation (PWM) circuitry with a built-in
0.6Ω n-channel MOSFET to provide a highly efficient
regulator.
90% Efficiency
Adjustable Output from VIN to 20V
0.8A, 0.6Ω, 24V Power MOSFET
2.5V to 5.5V Input Range
Fast 1MHz Switching Frequency
„ SOT-23-6 and TSOT-23-6 Package
High switching frequency allows easy filtering and
faster loop performance. An external compensation
pin provides the user flexibility in determining loop dynamics, allowing the use of small, low ESR ceramic
output capacitors. The device can produce an output
voltage as high as 20V.
Applications
„
„
„
Small/Medium Size LCD Displays
Organic LED Bias
Portable Applications
„ Hand-Held Devices
The G5105 is available in a space-saving SOT-23-6
and TSOT-23-6 package.
Ordering Information
ORDER
NUMBER
MARKING
TEMP.
RANGE
PACKAGE
(Pb free)
G5105TBU
G5105TPU
5105xx
5105x
-40°C ~ +85°C
-40°C ~ +85°C
SOT-23-6
TSOT-23-6
Note:TB : SOT-23-6 TP: TSOT-23-6
U: Tape & Reel
Pin Configuration
Typical Application Circuit
SW
1
6
VCC
VCC
C1
10µF
5 COMP
2
VOUT
15V, 40mA
4.7µH
SHDN
GND
D1
L1
VIN
2.5V to 5.5V
G5105
GND
SW
CF
47pF
R1
560k
FB
COMP
R2
51kΩ
RC
3.6kΩ
FB
4 SHDN
3
C2
10µF
CC
10nF
SOT-23-6/TSOT-23-6
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.6 Preliminary
May 10, 2006
1
G5105
Global Mixed-mode Technology Inc.
Absolute Maximum Ratings
Junction Temperature . . . . . . . . . . . . . . . . . . . . .125°C
Storage Temperature. . . . . . . . . . . . . . -65°C to 150°C
Reflow Temperature (soldering, 10sec) . . . . . . 260°C
VCC, SHDN to GND. . . . . . . . . . . . . . . . .-0.3V to +7V
FB, COMP to GND . . . . . . . . . . . . . . . . . . -0.3V to VCC
SW to GND . . . . . . . . . . . . . . . . . . . . .. . .-0.3V to +24V
Operating Temperature . . . . . . . . . . . . . .-40°C to 85°C
Stress beyond those listed under “Absolute Maximum Rating” may cause permanent damage to the device.
Electrical Characteristics
(VCC=V SHDN =3.6V, TA=25°C)
PARAMETER
CONDITIONS
Input Voltage Range
Input Voltage UVLO
MIN
TYP
MAX
UNITS
2.5
---
5.5
V
1.7
2.0
2.3
V
VFB = 1.5V (no switching)
---
100
200
µA
VFB = 0V (switching)
V SHDN = 0V
---
---
2
mA
---
0.1
1
µA
1.25
1.28
1.31
V
Error Amp Transconductance
-----
100
0.76
-----
ppm/°C
mmho
Error Amp Voltage Gain
---
100
---
V/V
---
5
10
%
0.7
1
1.3
MHz
%
Quiescent Current
FB Comparator Trip Point
Initial Accuracy
Temperature Coefficient
Output Over Voltage Protection
Switching Frequency
VFB = 0.2V
Maximum Duty
85
---
---
Switch RDS(ON)
ISW = 150mA
---
0.6
1
Ω
Switch Leakage Current
VSW = 20V
---
0.1
10
µA
Switch Current Limit
0.7
0.95
1.3
A
SHDN Pin Voltage High
2
---
---
V
SHDN Pin Voltage Low
---
---
0.8
V
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.6 Preliminary
May 10, 2006
2
G5105
Global Mixed-mode Technology Inc.
Typical Performance Characteristics
(VCC= +3.6V, V SHDN = +3.6V, L=10µH, TA=25°C, unless otherwise noted.)
IQ_SW vs. Temperature
1.2
1
1
0.8
0.8
IQ_SW (mA)
IQ_SW (mA)
IQ_SW vs. Input Voltage
1.2
0.6
0.4
0.2
0.6
0.4
0.2
0
2
2.5
3
3.5
4
4.5
5
5.5
0
-40
6
-20
0
Input Voltage (V)
120
120
100
100
80
60
20
20
0
3.5
4
4.5
5
5.5
0
-40
6
-20
0
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0
-0.1
-0.2
60
80
100
0
-0.1
-0.2
-0.3
-0.4
-0.4
-0.5
3.5
4
4.5
Input Voltage (V)
40
0.1
-0.3
3
20
IQ_SHDN vs. Temperature
0.5
IQ_SHDN (µ A)
IQ_SHDN (µ A)
IQ_SHDN vs. Input Voltage
0.5
2.5
100
Temperature ( °C)
Input Voltage (V)
2
80
60
40
3
60
80
40
2.5
40
IQ_NOSW vs. Temperature
140
IQ_NOSW (µA)
IQ_NOSW (µA)
IQ_NOSW vs. Input Voltage
140
2
20
Temperature ( °C)
5
5.5
-0.5
-40
6
-20
0
20
40
60
80
100
Temperature ( °C)
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.6 Preliminary
May 10, 2006
3
G5105
Global Mixed-mode Technology Inc.
Typical Performance Characteristics (continued)
Feedback Voltage vs. Temperature
1.31
1.3
1.3
Feedback Voltage (mV)
Feedback Voltage (mV)
Feedback Voltage vs. Input Voltage
1.31
1.29
1.28
1.27
1.26
1.25
2
2.5
3
3.5
4
4.5
5
5.5
1.29
1.28
1.27
1.26
1.25
-40
6
-20
0
Input Voltage (V)
1
0.9
1
0.9
0.8
0.7
0.6
0.5
0.4
0.1
0
0.1
0
-40
3.5
4
4.5
5
5.5
6
-20
0
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.5
0.4
60
80
100
0.5
0.4
0.3
0.2
0.2
0.1
0.1
0
3.5
4
4.5
Input Voltage (V)
40
0.6
0.3
3
20
SW R_on vs. Temperature
1
SW R_on (Ω)
SW R_on (Ω)
SW R_on vs. Input Voltage
1
2.5
100
Temperature ( °C)
Input Voltage (V)
2
80
0.6
0.5
0.4
0.3
0.2
3
60
0.8
0.7
0.3
0.2
2.5
40
Frequency vs. Temperature
1.2
1.1
Frequency (MHz)
Frequency (MHz)
Frequency vs. Input Voltage
1.2
1.1
2
20
Temperature ( °C)
5
5.5
0
-40
6
-20
0
20
40
60
Temperature ( °C)
80
100
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.6 Preliminary
May 10, 2006
4
G5105
Global Mixed-mode Technology Inc.
Typical Performance Characteristics (continued)
Current Limit vs. Temperature
1000
1000
950
950
900
900
Current Limit (mA)
Current Limit (mA)
Current Limit vs. Input Voltage
850
800
750
700
650
850
800
750
700
650
600
2
2.5
3
3.5
4
4.5
Input Voltage (V)
5
5.5
600
-40
6
-20
0
20
40
60
Temperature (°C)
Stability Waveform
Stability Waveform
Stability Waveform
Stability Waveform
80
100
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.6 Preliminary
May 10, 2006
5
G5105
Global Mixed-mode Technology Inc.
Typical Performance Characteristics (continued)
Stability Waveform
Stability Waveform
Load Transient
Load Transient
Efficiency vs. Load Current
100
90
90
80
80
V IN=2.5V
70
70
Efficiency (%)
Efficiency (%)
Efficiency vs. Load Current
100
V IN=3.6V
60
50
V IN=5.0V
40
30
20
V IN=3.6V
50
30
V IN=3.0V
V OUT =20V
10
0
V IN=5.0V
40
20
V OUT =7.5V
10
60
0
0.1
1
10
100
Load Current (mA)
1000
0.1
1
10
100
Load Current (mA)
1000
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.6 Preliminary
May 10, 2006
6
Global Mixed-mode Technology Inc.
G5105
Recommended Minimum Footprint
SOT-23-6/TSOT-23-6
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.6 Preliminary
May 10, 2006
7
G5105
Global Mixed-mode Technology Inc.
Pin Description
PIN
NAME
1
2
SW
GND
FUNCTION
3
4
FB
SHDN
Feedback Pin.
Active Low Shutdown Pin.
5
6
COMP
VCC
Compensation Pin.
Input Supply Pin. Bypass this pin with a capacitor as close to the device as possible.
Switch Pin. The drain of the internal NMOS power switch. Connect this pin to inductor.
Ground Pin.
Block Diagram
FB
SW
COMP
COMPARATOR
A1
+
DRIVER
R
A2
+
S
CONTROL
Q
M1
1.28V
RAMP
GENERATOR
VREF
+
OC
1MHz
OSCILLATOR
VCC
GND
SHDN
White LED Driver
D1
L1
VOUT
VIN
C1
M1
VCC
ON OFF
D2
(Optional)
C2
SW
SHDN
G5105
GND
R2
FB
COMP
R3
R4
R1
RC
CC
VBIAS
VDIM
PWM Dimming
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.6 Preliminary
May 10, 2006
8
Global Mixed-mode Technology Inc.
G5105
ciency are the major concerns for most G5105 applications. Inductor with low core losses and small DCR
(cooper wire resistance) at 1MHz are good choice for
G5105 applications.
Function Description
Normal Operation
The G5105 uses a constant frequency control scheme
to provide excellent line and load regulation. Operation
can be best understood by referring to the block diagram. At the start of each oscillator cycle, the SR latch
is set, which turns on the power switch M1. An artificial
ramp is generated to the positive terminal of the PWM
comparator A2. When this voltage exceeds the level at
the negative input of A2, the SR latch is reset turning
off the power switch. The level at the negative input of
A2 is set by the error amplifier A1, and is simply an
amplified version of the difference between the feedback voltage and the reference voltage of 1.28V. In
this manner, the error amplifier sets the correct peak
current level (DCM) or duty (CCM) to keep the output
in regulation.
Capacitor Selection
The small size of ceramic capacitors makes them suitable for G5105 applications. X5R and X7R types are
recommended because they retain their capacitance
over wider voltage and temperature ranges than other
types such as Y5V or Z5U. A 10µF or 22µF capacitor
for input and output are recommended for most applications. Smaller input/output capacitor enlarges the
input/output ripple.
Diode Selection
Schottky diodes, with their low forward voltage drop
and fast reverse recovery, are the ideal choices for
G5105 applications. The forward voltage drop of a
Schottky diode represents the conduction losses in the
diode, while the diode capacitance (CT or CD) represents the switching losses. For diode selection, both
forward voltage drop and diode capacitance need to be
considered. Schottky diodes with higher current ratings
usually have lower forward voltage drop and larger diode capacitance, which can cause significant switching
losses at the 1MHz switching frequency of the G5105.
A Schottky diode rated at 1A is sufficient for most
G5105 applications.
Over Voltage Protection
Over voltage protect function is designed to prevent
the output accidentally damage the load. Once the
device detects over voltage (nominalx1.05) at the
output, the internal NMOS switch turns off to stop
power input
Application Information
Inductor Selection
A 4.7µH or 10µH inductor is recommended for small
ripple applications. Small form factor and high effi-
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.6 Preliminary
May 10, 2006
9
G5105
Global Mixed-mode Technology Inc.
Package Information
C
D
L
H
E
θ1
e1
e
A
A2
A1
b
SOT-23-6 (TB) Package
Note:
1. Package body sizes exclude mold flash protrusions or gate burrs
2. Tolerance ±0.1000 mm (4mil) unless otherwise specified
3. Coplanarity: 0.1000mm
4. Dimension L is measured in gage plane
MIN.
DIMENSION IN MM
NOM.
MAX.
MIN.
DIMENSION IN INCH
NOM.
MAX.
A
A1
A2
b
1.00
0.00
0.70
0.35
1.10
----0.80
0.40
1.30
0.10
0.90
0.50
0.039
0.000
0.028
0.014
0.043
----0.031
0.016
0.051
0.004
0.035
0.020
C
D
E
e
0.10
2.70
1.40
-----
0.15
2.90
1.60
1.90(TYP)
0.25
3.10
1.80
-----
0.004
0.106
0.055
-----
0.006
0.114
0.063
0.075(TYP)
0.010
0.122
0.071
-----
H
L
θ1
2.60
0.37
2.80
------
3.00
-----
0.102
0.015
0.110
-----
0.118
-----
1°
5°
9°
1°
5°
9°
SYMBOL
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.6 Preliminary
May 10, 2006
10
G5105
Global Mixed-mode Technology Inc.
C
D
L
E1 E
θ1
e
e1
A2
A
y
b
A1
TSOT-23-6 (TP) Package
Note:
1. Dimension D does not include mold flash, protrusions or tate burrs. Mold flash, protrusions or gate burrs shall not exceed
0.1mm PER end. Dimension E1 does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.15mm PER side.
2. The package top may be smaller than the package bottom. Dimensions D and E1 are determined at the outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch
between the top and bottom of the plastic body.
SYMBOL
A
A1
A2
b
C
D
E
E1
e
e1
L
y
θ1
MIN.
DIMENSION IN MM
NOM.
0.75
0.00
0.70
0.35
0.10
2.80
2.60
1.50
0.37
----0°
--------0.75
--------2.90
2.80
1.60
0.95 BSC
1.90 BSC
-------------
MAX.
MIN.
0.90
0.10
0.80
0.51
0.25
3.00
3.00
1.70
0.030
0.000
0.028
0.014
0.004
0.110
0.102
0.059
----0.10
8°
0.015
DIMENSION IN INCH
NOM.
0°
--------0.030
--------0.114
0.110
0.063
0.0374 BSC
0.0748 BSC
-------------
MAX.
0.035
0.004
0.031
0.020
0.010
0.118
0.118
0.067
----0.004
8°
Taping Specification
PACKAGE
Q’TY/REEL
SOT-23-6
TSOT-23-6
3,000 ea
3,000 ea
Feed Direction
SOT- 23-6 / TSOT-23-6 Package Orientation
GMT Inc. does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and GMT Inc. reserves the right at any time without notice to change said circuitry and specifications.
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.6 Preliminary
May 10, 2006
11
Similar pages