TI1 OPA1652AIDGK Low noise and distortion, general-purpose, fet-input Datasheet

OPA1652
OPA1654
Burr-Brown Audio
SBOS477 – DECEMBER 2011
www.ti.com
™ Low Noise and Distortion, General-Purpose, FET-Input
AUDIO OPERATIONAL AMPLIFIERS
Check for Samples: OPA1652, OPA1654
FEATURES
DESCRIPTION
• Low Noise: 4.5 nV/√Hz at 1 kHz
• Low Distortion: 0.00005% at 1 kHz
• Low Quiescent Current:
2 mA Per Channel
• Low Input Bias Current: 10 pA
• Slew Rate: 10 V/μs
• Wide Gain Bandwidth: 18 MHz (G = +1)
• Unity Gain Stable
• Rail-to-Rail Output
• Wide Supply Range:
±2.25 V to ±18 V, or +4.5 V to +36 V
• Dual and Quad Versions Available
• Small Package Sizes:
DUAL: SO-8 and MSOP-8
QUAD: SO-14 and TSSOP-14
The OPA1652 (dual) and OPA1654 (quad) FET-input
operational amplifiers achieve a low 4.5 nV/√Hz noise
density with an ultralow distortion of 0.00005% at 1
kHz. The OPA1652 and OPA1654 op amps offer
rail-to-rail output swing to within 800 mV with 2-kΩ
load, which increases headroom and maximizes
dynamic range. These devices also have a high
output drive capability of ±30 mA.
APPLICATIONS
The OPA1652 and OPA1654 temperature ranges are
specified from –40°C to +85°C. SoundPlus™
1
234
•
•
•
•
•
•
Analog and Digital Mixers
Audio Effects Processors
Musical Instruments
A/V Receivers
DVD and Blu-Ray™ Players
Car Audio Systems
These devices operate over a very wide supply range
of ±2.25 V to ±18 V, or +4.5 V to +36 V, on only 2 mA
of supply current per channel. The OPA1652 and
OPA1654 op amps are unity-gain stable and provide
excellent dynamic behavior over a wide range of load
conditions.
These devices also feature completely independent
circuitry for lowest crosstalk and freedom from
interactions between channels, even when overdriven
or overloaded.
1
2
3
4
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
SoundPlus is a trademark of Texas Instruments Incorporated.
Blu-Ray is a trademark of Blu-Ray Disc Association.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated
OPA1652
OPA1654
SBOS477 – DECEMBER 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE INFORMATION (1)
PRODUCT
PACKAGE-LEAD
PACKAGE DESIGNATOR
PACKAGE MARKING
SO-8
D
OP1652
MSOP-8
DGK
OUPI
SO-14
D
OP1654
TSSOP-14
PW
OP1654
OPA1652
OPA1654
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
Over operating free-air temperature range (unless otherwise noted).
OPA1652, OPA1654
UNIT
40
V
VS = (V+) – (V–)
Supply Voltage
Input Voltage
(V–) – 0.5 to (V+) + 0.5
V
±10
mA
Input Current (All pins except power-supply pins)
Output Short-Circuit (2)
Continuous
Operating Temperature
–55 to +125
°C
Storage Temperature
–65 to +150
°C
Junction Temperature
200
°C
Human Body Model (HBM)
2
kV
Charged Device Model (CDM)
1
kV
200
V
ESD Ratings
Machine Model (MM)
(1)
(2)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not supported.
Short-circuit to VS/2 (ground in symmetrical dual supply setups), one amplifier per package.
PIN CONFIGURATIONS
OPA1652: D AND DGK PACKAGES
SO-8 AND MSOP-8
(TOP VIEW)
OUT A
1
-IN A
2
+IN A
3
V-
4
A
B
8
V+
7
OUT B
6
-IN B
5
+IN B
OPA1654: D AND PW PACAKGES
SO-14 AND TSSOP-14
(TOP VIEW)
Out A
1
-In A
2
A
14
Out D
13
-In D
D
+In A
3
12
+In D
V+
4
11
V-
+ In B
5
10
+ In C
B
C
-In B
6
9
-In C
Out B
7
8
Out C
2
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA1652 OPA1654
OPA1652
OPA1654
SBOS477 – DECEMBER 2011
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ELECTRICAL CHARACTERISTICS: VS = ±15 V
At TA = +25°C, RL = 2 kΩ, and VCM = VOUT = midsupply, unless otherwise noted.
OPA1652, OPA1654
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
AUDIO PERFORMANCE
THD+N
IMD
Total harmonic distortion + noise
Intermodulation distortion
G = +1, f = 1 kHz, VO = 3 VRMS
G = +1,
VO = 3 VRMS
0.00005
%
–126
dB
SMPTE/DIN Two-Tone, 4:1
(60 Hz and 7 kHz)
0.00005
%
–126
dB
DIM 30 (3-kHz square wave
and 15-kHz sine wave)
0.00005
%
–126
dB
CCIF Twin-Tone
(19 kHz and 20 kHz)
0.00005
%
–126
dB
FREQUENCY RESPONSE
GBW
Gain-bandwidth product
G = +1
18
SR
Slew rate
G = –1
10
MHz
V/μs
Full power bandwidth (1)
VO = 1 VP
1.6
MHz
Overload recovery time
G = –10
Channel separation (dual and quad)
f = 1 kHz
Input voltage noise
f = 20 Hz to 20 kHz
5.4
μVPP
Input voltage noise density
f = 1 kHz
4.5
nV/√Hz
Input current noise density
f = 1 kHz
0.5
pA/√Hz
1
μs
–120
dB
NOISE
en
In
OFFSET VOLTAGE
VOS
Input offset voltage
PSRR
Power-supply rejection ratio
VS = ±2.25 V to ±18 V
±0.5
±1.5
VS = ±2.25 V to ±18 V, TA = –40°C to +85°C (2)
2
8
μV/°C
VS = ±2..25 V to ±18 V
3
8
μV/V
mV
INPUT BIAS CURRENT
IB
Input bias current
VCM = 0 V
±10
±100
pA
IOS
Input offset current
VCM = 0 V
±10
±100
pA
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
(V–) + 0.5
CMRR
Common-mode rejection ratio
100
(V+) – 2
110
V
dB
INPUT IMPEDANCE
Differential
Common-mode
100 || 6
MΩ || pF
6000 || 2
GΩ || pF
OPEN-LOOP GAIN
Open-loop voltage gain
(V–) + 0.8 V ≤ VO ≤ (V+) – 0.8 V, RL = 2 kΩ
VOUT
Voltage output
RL = 2 kΩ
IOUT
Output current
ZO
Open-loop output impedance
ISC
Short-circuit current (3)
±50
mA
CLOAD
Capacitive load drive
100
pF
AOL
106
114
dB
OUTPUT
(V+) – 0.8
(V–) + 0.8
See Typical Characteristics
f = 1 MHz
V
mA
Ω
See Typical Characteristics
POWER SUPPLY
VS
IQ
(1)
(2)
(3)
±2.25
Specified voltage
Quiescent current
(per channel)
IOUT = 0 A
IOUT = 0 A, TA = –40°C to +85°C (2)
2.0
±18
V
2.5
mA
2.8
mA
Full-power bandwidth = SR/(2π × VP), where SR = slew rate.
Specified by design and characterization.
One channel at a time.
3
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA1652 OPA1654
OPA1652
OPA1654
SBOS477 – DECEMBER 2011
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ELECTRICAL CHARACTERISTICS: VS = ±15 V (continued)
At TA = +25°C, RL = 2 kΩ, and VCM = VOUT = midsupply, unless otherwise noted.
OPA1652, OPA1654
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TEMPERATURE
Specified range
–40
+85
°C
Operating range
–55
+125
°C
THERMAL INFORMATION: OPA1652
OPA1652
THERMAL METRIC (1)
D (SO)
DGK (MSOP)
8 PINS
8 PINS
θJA
Junction-to-ambient thermal resistance
143.6
218.9
θJCtop
Junction-to-case (top) thermal resistance
76.9
78.6
θJB
Junction-to-board thermal resistance
61.8
103.7
ψJT
Junction-to-top characterization parameter
27.8
14.6
ψJB
Junction-to-board characterization parameter
61.3
101.8
θJCbot
Junction-to-case (bottom) thermal resistance
N/A
N/A
(1)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
THERMAL INFORMATION: OPA1654
OPA1654
THERMAL METRIC (1)
D (SO)
PW (TSSOP)
14 PINS
14 PINS
θJA
Junction-to-ambient thermal resistance
90.1
126.9
θJCtop
Junction-to-case (top) thermal resistance
54.8
46.6
θJB
Junction-to-board thermal resistance
44.4
58.6
ψJT
Junction-to-top characterization parameter
19.9
5.5
ψJB
Junction-to-board characterization parameter
44.2
57.8
θJCbot
Junction-to-case (bottom) thermal resistance
N/A
N/A
(1)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA1652 OPA1654
OPA1652
OPA1654
SBOS477 – DECEMBER 2011
www.ti.com
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
INPUT VOLTAGE NOISE DENSITY
vs FREQUENCY
0.1Hz TO 10Hz NOISE
Voltage Noise (500 nV/div)
Voltage Noise (nV/ Hz)
100
10
1
1
10
100
1k
Frequency (Hz)
10k
100k
Time (1 s/div)
Figure 1.
Figure 2.
VOLTAGE NOISE vs SOURCE RESISTANCE
MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
20
10k
E2o = e2n + (inRS)2 + 4KTRS
18
RS
Output Voltage (V)
Voltage Noise (nV/ Hz)
EO
1k
G002
G001
OPA166x
100
OPA165x
10
VS = ± 15 V
15
12
10
8
5
VS = ± 2.25 V
2
Resistor Noise
1
100
1k
10k
100k
0
10k
1M
Source Resistance (W)
100k
1M
Frequency (Hz)
G003
Figure 3.
G004
Figure 4.
GAIN AND PHASE vs FREQUENCY
CLOSED-LOOP GAIN vs FREQUENCY
180
140
40
Gain
Phase
120
Gain = −1 V/V
Gain = +1 V/V
Gain = +10 V/V
135
100
90
60
40
0
45
20
Gain (dB)
20
80
Phase (°)
Gain (dB)
10M
0
CL = 10 pF
−20
10
100
1k
10k
100k
Frequency (Hz)
1M
10M
0
100M
G005
CL = 10 pF
−20
100k
1M
10M
Frequency (Hz)
Figure 5.
100M
G006
Figure 6.
5
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Product Folder Link(s): OPA1652 OPA1654
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OPA1654
SBOS477 – DECEMBER 2011
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TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
THD+N RATIO vs FREQUENCY
G = 10 V/V, RL = 600 Ω
G = 10 V/V, RL = 2 kΩ
G = +1 V/V, RL = 600 Ω
G = +1 V/V, RL = 2 kΩ
G = −1 V/V, RL = 600 Ω
G = −1 V/V, RL = 2 kΩ
0.001
THD+N RATIO vs FREQUENCY
0.01
VOUT = 3 VRMS
BW = 80 kHz
-15V
0.0001
0.00001
VOUT = 3 VRMS
BW = 80 kHz
+15V
RL
0.001
0.0001
20
100
1k
Frequency (Hz)
10k
0.00001
20k
20
100
1k
Frequency (Hz)
G007
Figure 7.
VOUT = 3 VRMS
BW = 500 kHz
VOUT = 3 VRMS
BW = 500 kHz
+15V
RS = 0 W
RS = 30 W
RS = 60 W
RS = 1 kW
RSOURCE OPA1652
-15V
THD+N (%)
THD+N (%)
G008
THD+N RATIO vs FREQUENCY
0.0001
0.001
RL
0.0001
20
100
1k
Frequency (Hz)
10k
0.00001
100k
1k
Frequency (Hz)
10k
100k
G010
Figure 10.
THD+N RATIO vs OUTPUT AMPLITUDE
INTERMODULATION DISTORTION vs
OUTPUT AMPLITUDE
0.01
DIM 30: 3 kHz − Square Wave, 15 kHz Sine Wave
CCIF Twin Tone: 19 kHz and 20 kHz
SMPTE / DIN: Two −Tone 4:1, 60 Hz and 7 KHz
THD+N (%)
0.001
0.00001
1m
100
Figure 9.
f = 1 kHz
BW = 80 kHz
RS = 0 Ω
0.0001
20
G009
0.01
THD+N (%)
20k
0.01
G = 10 V/V, RL = 600 Ω
G = 10 V/V, RL = 2 kΩ
G = +1 V/V, RL = 600 Ω
G = +1 V/V, RL = 2 kΩ
G = −1 V/V, RL = 600 Ω
G = −1 V/V, RL = 2 kΩ
0.001
10k
Figure 8.
THD+N RATIO vs FREQUENCY
0.01
0.00001
RS = 0 W
RS = 30 W
RS = 60 W
RS = 1 kW
RSOURCE OPA1652
THD+N (%)
THD+N (%)
0.01
G = 10 V/V, RL = 600 Ω
G = 10 V/V, RL = 2 kΩ
G = +1 V/V, RL = 600 Ω
G = +1 V/V, RL = 2 kΩ
G = −1 V/V, RL = 600 Ω
G = −1 V/V, RL = 2 kΩ
10m
0.001
0.0001
100m
1
Output Amplitude (Vrms)
10 20
G = +1 V/V
0.00001
100m
G011
Figure 11.
1
Output Amplitude (Vrms)
10
20
G012
Figure 12.
6
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA1652 OPA1654
OPA1652
OPA1654
SBOS477 – DECEMBER 2011
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TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
CHANNEL SEPARATION vs FREQUENCY
CMRR AND PSRR vs FREQUENCY (Referred to Input)
140
−80
VOUT = 3 VRMS
Gain = +1 V/V
120
CMRR, PSRR (dB)
Crosstalk (dB)
−100
−120
−140
100
80
60
40
20
−160
100
1k
10k
0
100
100k
Frequency (Hz)
1k
G013
10k
100k
1M
Frequency (Hz)
10M
100M
G014
Figure 13.
Figure 14.
SMALL-SIGNAL STEP RESPONSE
(100mV)
SMALL-SIGNAL STEP RESPONSE
(100mV)
VIN
VOUT
Voltage (25 mV/div)
Voltage (25 mV/div)
VIN
VOUT
G = −1 V/V
CL = 100 pF
G = +1 V/V
CL = 100 pF
Time (0.2 ms/div)
Time (0.2 ms/div)
G015
G016
Figure 15.
Figure 16.
LARGE-SIGNAL STEP RESPONSE
LARGE-SIGNAL STEP RESPONSE
VIN
VOUT
G = + 1V/V
RF = 2 kW
CL = 100 pF
Time (1 ms/div)
G = −1 V/V
CL = 100 pF
Voltage (2.5 V/div)
VIN
VOUT
Voltage (2.5 V/div)
+PSRR
−PSRR
CMRR
G017
Figure 17.
Time (1 ms/div)
G018
Figure 18.
7
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TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
SMALL-SIGNAL OVERSHOOT
vs CAPACITIVE LOAD
50
50
RS = 0 W
RS = 25 W
RS = 50 W
45
40
35
RS
OPA1652
30
VOUT = 100 mVPP
G = +1 V/V
20
RL
-15 V
CL
25
10
5
5
100
150
200
250
Capacitance (pF)
300
350
VOUT = 100 mVPP
G = −1 V/V
20
15
50
CL
-15 V
30
10
0
RS
OPA1652
35
15
0
RS = 0 W
RS = 25 W
RS = 50 W
RF = 2 kW
+15 V
40
+15 V
25
RI = 2 kW
45
Overshoot (%)
Overshoot (%)
SMALL-SIGNAL OVERSHOOT
vs CAPACITIVE LOAD
0
400
0
50
100
150
200
250
Capacitance (pF)
G019
Figure 19.
300
350
400
G020
Figure 20.
SMALL-SIGNAL OVERSHOOT
vs FEEDBACK CAPACITOR (100mV Output Step)
OPEN-LOOP GAIN vs TEMPERATURE
4
25
VOUT = 100 mVPP
G = −1 V/V
RS = 0 W
20
CF
RI = 2 kW
RF = 2 kW
3
RS
OPA1652
15
AOL (µV)
Overshoot (%)
+15 V
CL
-15 V
10
2
1
0
5
RL = 2 kΩ
0
0
1
2
3
Capacitance (pF)
4
−1
−40
5
−15
G021
Figure 21.
IB AND IOS vs TEMPERATURE
110
135
G022
IB AND IOS vs COMMON-MODE VOLTAGE
Ibn
Ibp
Ios
Ibp
Ibn
Ios
6
0
−400
−800
−1200
−1600
−2000
−40
85
8
Ib and Ios Current (pA)
Ib and Ios Current (pA)
400
35
60
Temperature (°C)
Figure 22.
1200
800
10
4
2
0
−2
−4
−6
−15
10
35
60
Temperature (°C)
85
110
135
G023
−8
−18 −15 −12 −9 −6 −3 0
3
6
9
Common − Mode Voltage (V)
Figure 23.
12
15
18
G024
Figure 24.
8
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TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
SUPPLY CURRENT vs SUPPLY VOLTAGE
3
2.5
2.5
Supply Current (mA)
Supply Current (mA)
SUPPLY CURRENT vs TEMPERATURE
3
2
1.5
1
2
1.5
1
0.5
0.5
0
−40
−15
10
35
60
Temperature (°C)
85
110
0
135
0
4
8
12
16
20
24
Supply Voltage (V)
G025
Figure 25.
30
80
G026
+Isc
−Isc
60
20
40
10
0
−40 C
−25 C
0C
25 C
85 C
125 C
−10
−20
−30
0
5
10
15
20 25 30 35 40
Output Current (mA)
45
50
55
20
0
−20
−40
−60
−80
60
−100
−40
−15
10
G029
Figure 27.
35
60
Temperature (°C)
85
110
135
G028
Figure 28.
PHASE MARGIN vs CAPACITIVE LOAD
PERCENT OVERSHOOT vs CAPACITIVE LOAD
90
50
G = +1 V/V
80
G = +1 V/V
VIN = 100 mVPP
40
70
60
Overshoot (%)
Phase Margin (°)
36
SHORT-CIRCUIT CURRENT vs TEMPERATURE
100
Isc (mA)
Output Volage Swing (V)
OUTPUT VOLTAGE vs OUTPUT CURRENT
50
40
30
20
30
20
10
VS = ± 2.25 V
VS = ± 18 V
10
0
32
Figure 26.
40
−40
28
0
50
100
150
200
250
Capacitance (pF)
300
350
400
0
0
50
G031
Figure 29.
100
150
200
250
Capacitance (pF)
300
350
400
G032
Figure 30.
9
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TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
NEGATIVE OVERLOAD RECOVERY
POSITIVE OVERLOAD RECOVERY
20 kW
VIN
VOUT
20 kW
+18 V
2 kW
+18 V
2 kW
OPA1652
Output Voltage (5 V/div)
Output Voltage (5 V/div)
G = −10 V/V
VOUT
VIN
-18 V
G = -10
VIN
VOUT
VOUT
OPA1652
VIN
-18 V
G = −10 V/V
G = -10
Time (0.4 ms/div)
Time (0.4 ms/div)
G033
Figure 31.
OPEN-LOOP OUTPUT IMPEDANCE vs
FREQUENCY
NO PHASE REVERSAL
1k
20
+18 V
15
Voltage (V)
10
Impedance (Ω)
G027
Figure 32.
100
5
G = +1 V/V
OPA1652
-18 V
37VPP
Sine Wave
(±18.5 V)
0
−5
−10
VIN
VOUT
−15
10
10
100
1k
10k
100k
Frequency (Hz)
1M
10M
100M
−20
G030
Figure 33.
Time (125 ms/div)
G034
Figure 34.
10
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APPLICATION INFORMATION
The OPA1652 and OPA1654 are unity-gain stable,
precision dual and quad op amps with very low noise.
Applications with noisy or high-impedance power
supplies require decoupling capacitors close to the
device pins. In most cases, 0.1-μF capacitors are
adequate. Figure 35 shows a simplified schematic of
the OPA165x (one channel shown).
OPERATING VOLTAGE
The OPA165x series op amps operate from ±2.25 V
to ±18 V supplies while maintaining excellent
performance. The OPA165x series can operate with
as little as +4.5V between the supplies and with up to
+36 V between the supplies. However, some
applications do not require equal positive and
negative output voltage swing. With the OPA165x
series, power-supply voltages do not need to be
equal. For example, the positive supply could be set
to +25 V with the negative supply at –5 V.
In all cases, the common-mode voltage must be
maintained within the specified range. In addition, key
parameters are assured over the specified
temperature range of TA = –40°C to +85°C.
Parameters that vary significantly with operating
voltage or temperature are shown in the Typical
Characteristics.
V+
Tail
Current
VBIAS1
VIN+
Class AB
Control
Circuitry
VO
VINVBIAS2
V-
Figure 35. OPA165x Simplified Schematic
11
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA1652 OPA1654
OPA1652
OPA1654
SBOS477 – DECEMBER 2011
www.ti.com
The input terminals of the OPA1652 and OPA1654
are protected from excessive differential voltage with
back-to-back diodes, as Figure 36 illustrates. In most
circuit applications, the input protection circuitry has
no consequence. However, in low-gain or G = +1
circuits, fast ramping input signals can forward bias
these diodes because the output of the amplifier
cannot respond rapidly enough to the input ramp. If
the input signal is fast enough to create this forward
bias condition, the input signal current must be limited
to 10 mA or less. If the input signal current is not
inherently limited, an input series resistor (RI) and/or
a feedback resistor (RF) can be used to limit the
signal input current. This resistor degrades the
low-noise performance of the OPA165x and is
examined in the following Noise Performance section.
Figure 36 shows an example configuration when both
current-limiting input and feeback resistors are used.
The equation in Figure 37 shows the calculation of
the total circuit noise, with these parameters:
• en = Voltage noise
• in = Current noise
• RS = Source impedance
• k = Boltzmann’s constant = 1.38 × 10–23 J/K
• T = Temperature in Kelvins (K)
10k
E2o = e2n + (inRS)2 + 4KTRS
Voltage Noise (nV/ Hz )
INPUT PROTECTION
1k
OPA166X
100
OPA165X
10
Resistor Noise
1
100
RF
1k
10k
Source Resistance (Ω)
OPA165x
Input
1M
G003
Figure 37. Noise Performance of the OPA165x in
Unity-Gain Buffer Configuration
-
RI
100k
Output
BASIC NOISE CALCULATIONS
+
Figure 36. Pulsed Operation
NOISE PERFORMANCE
Figure 37 shows the total circuit noise for varying
source impedances with the op amp in a unity-gain
configuration (no feedback resistor network, and
therefore no additional noise contributions).
The OPA165x (GBW = 18 MHz, G = +1) is shown
with total circuit noise calculated. The op amp itself
contributes both a voltage noise component and a
current noise component. The voltage noise is
commonly modeled as a time-varying component of
the offset voltage. The current noise is modeled as
the time-varying component of the input bias current
and reacts with the source resistance to create a
voltage component of noise. Therefore, the lowest
noise op amp for a given application depends on the
source impedance. For low source impedance,
current noise is negligible, and voltage noise
generally dominates. The voltage noise of the
OPA165x series op amps makes them a better
choice for source impedances greater than or equal
to 1 kΩ.
Design of low-noise op amp circuits requires careful
consideration of a variety of possible noise
contributors: noise from the signal source, noise
generated in the op amp, and noise from the
feedback network resistors. The total noise of the
circuit is the root-sum-square combination of all noise
components.
The resistive portion of the source impedance
produces thermal noise proportional to the square
root of the resistance. Figure 37 plots this equation.
The source impedance is usually fixed; consequently,
select the op amp and the feedback resistors to
minimize the respective contributions to the total
noise.
Figure 38 illustrates both inverting and noninverting
op amp circuit configurations with gain. In circuit
configurations with gain, the feedback network
resistors also contribute noise. The current noise of
the op amp reacts with the feedback resistors to
create additional noise components. The feedback
resistor values can generally be chosen to make
these noise sources negligible. The equations for
total noise are shown for both configurations.
12
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA1652 OPA1654
OPA1652
OPA1654
SBOS477 – DECEMBER 2011
www.ti.com
A) Noise in Noninverting Gain Configuration
Noise at the output:
R2
2
R2
EO2 = 1 +
R1
R1
2
en2 +
R2
R1
2
e12 + e22 + 1 +
R2
R1
es2
EO
RS
Where eS =
4kTRS = thermal noise of RS
e1 =
4kTR1 = thermal noise of R1
e2 =
4kTR2 = thermal noise of R2
VS
B) Noise in Inverting Gain Configuration
Noise at the output:
R2
2
R2
2
EO = 1 +
R1
RS
e n2 +
R 1 + RS
e12 + e22 +
2
R2
R 1 + RS
e s2
EO
VS
Note:
R1 + RS
2
R2
Where eS =
4kTRS = thermal noise of RS
e1 =
4kTR1 = thermal noise of R1
e2 =
4kTR2 = thermal noise of R2
For the OPA165x series of op amps at 1kHz, en = 4.5nV/√Hz.
Figure 38. Noise Calculation in Gain Configurations
13
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA1652 OPA1654
OPA1652
OPA1654
SBOS477 – DECEMBER 2011
www.ti.com
TOTAL HARMONIC DISTORTION
MEASUREMENTS
The OPA165x series op amps have excellent
distortion characteristics. THD + noise is below
0.0002% (G = +1, VO = 3 VRMS, BW = 80 kHz)
throughout the audio frequency range, 20 Hz to 20
kHz, with a 2-kΩ load (see Figure 7 for characteristic
performance).
The distortion produced by the OPA165x series op
amps is below the measurement limit of many
commercially available distortion analyzers. However,
a special test circuit (such as Figure 39 shows) can
be used to extend the measurement capabilities.
Op amp distortion can be considered an internal error
source that can be referred to the input. Figure 39
shows a circuit that causes the op amp distortion to
be gained up (refer to the table in Figure 39 for the
distortion gain factor for various signal gains). The
addition of R3 to the otherwise standard noninverting
amplifier configuration alters the feedback factor or
noise gain of the circuit. The closed-loop gain is
unchanged, but the feedback available for error
correction is reduced by the distortion gain factor,
thus extending the resolution by the same amount.
Note that the input signal and load applied to the op
amp are the same as with conventional feedback
without R3. The value of R3 should be kept small to
minimize its effect on the distortion measurements.
R1
The validity of this technique can be verified by
duplicating measurements at high gain and/or high
frequency where the distortion is within the
measurement capability of the test equipment.
Measurements for this data sheet were made with an
Audio Precision System Two distortion/noise
analyzer, which greatly simplifies such repetitive
measurements. The measurement technique can,
however, be performed with manual distortion
measurement instruments.
CAPACITIVE LOADS
The dynamic characteristics of the OPA1652 and
OPA1654 have been optimized for commonly
encountered gains, loads, and operating conditions.
The combination of low closed-loop gain and high
capacitive loads decreases the phase margin of the
amplifier and can lead to gain peaking or oscillations.
As a result, heavier capacitive loads must be isolated
from the output. The simplest way to achieve this
isolation is to add a small resistor (RS equal to 50 Ω,
for example) in series with the output.
This small series resistor also prevents excess power
dissipation if the output of the device becomes
shorted. Figure 19 illustrates a graph of Small-Signal
Overshoot vs Capacitive Load for several values of
RS. Also, refer to Applications Bulletin AB-028
(literature number SBOA015, available for download
from the TI web site) for details of analysis
techniques and application circuits.
R2
SIGNAL DISTORTION
GAIN
GAIN
R3
Signal Gain = 1+
OPA165x
VO = 3 VRMS
R2
R1
Distortion Gain = 1+
R2
R1 II R3
Generator
Output
R1
R2
R3
¥
1 kW
10 W
+1
101
-1
101
4.99 kW 4.99 kW 49.9 W
+10
110
549 W 4.99 kW 49.9 W
Analyzer
Input
Audio Precision
System Two(1)
with PC Controller
Load
(1) For measurement bandwidth, see Figure 7 through Figure 12.
Figure 39. Distortion Test Circuit
14
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA1652 OPA1654
OPA1652
OPA1654
SBOS477 – DECEMBER 2011
www.ti.com
POWER DISSIPATION
The OPA1652 and OPA1654 series op amps are
capable of driving 2-kΩ loads with a power-supply
voltage up to ±18V and full operating temperature
range. Internal power dissipation increases when
operating at high supply voltages. Copper leadframe
construction used in the OPA165x series op amps
improves heat dissipation compared to conventional
materials. Circuit board layout can also help minimize
junction temperature rise. Wide copper traces help
dissipate the heat by acting as an additional heat
sink. Temperature rise can be further minimized by
soldering the devices to the circuit board rather than
using a socket.
ELECTRICAL OVERSTRESS
Designers often ask questions about the capability of
an operational amplifier to withstand electrical
overstress. These questions tend to focus on the
device inputs, but may involve the supply voltage pins
or even the output pin. Each of these different pin
functions have electrical stress limits determined by
the voltage breakdown characteristics of the
particular semiconductor fabrication process and
specific circuits connected to the pin. Additionally,
internal electrostatic discharge (ESD) protection is
built into these circuits to protect them from
accidental ESD events both before and during
product assembly.
These ESD protection diodes also provide in-circuit,
input overdrive protection, as long as the current is
limited to 10 mA as stated in the Absolute Maximum
Ratings. Figure 40 shows how a series input resistor
may be added to the driven input to limit the input
current. The added resistor contributes thermal noise
at the amplifier input and its value should be kept to a
minimum in noise-sensitive applications.
V+
IOVERLOAD
10 mA max
Device
VOUT
VIN
5 kW
Figure 40. Input Current Protection
An ESD event produces a short duration,
high-voltage pulse that is transformed into a short
duration, high-current pulse as it discharges through
a semiconductor device. The ESD protection circuits
are designed to provide a current path around the
operational amplifier core to prevent it from being
damaged. The energy absorbed by the protection
circuitry is then dissipated as heat.
When the operational amplifier connects into a circuit,
the ESD protection components are intended to
remain inactive and not become involved in the
application circuit operation. However, circumstances
may arise where an applied voltage exceeds the
operating voltage range of a given pin. Should this
condition occur, there is a risk that some of the
internal ESD protection circuits may be biased on,
and conduct current. Any such current flow occurs
through ESD cells and rarely involves the absorption
device.
If there is an uncertainty about the ability of the
supply to absorb this current, external zener diodes
may be added to the supply pins. The zener voltage
must be selected such that the diode does not turn
on during normal operation.
However, its zener voltage should be low enough so
that the zener diode conducts if the supply pin begins
to rise above the safe operating supply voltage level.
15
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA1652 OPA1654
OPA1652
OPA1654
SBOS477 – DECEMBER 2011
www.ti.com
APPLICATION CIRCUIT
An additional application idea is shown in Figure 41.
820 W
2200 pF
+VA
(+15 V)
0.1 mF
330 W
IOUTL+
OPA165x
2700 pF
-VA
(-15 V)
680 W
620 W
Audio DAC
with Differential
Current
Outputs
0.1 mF
+VA
(+15 V)
0.1 mF
100 W
820 W
OPA165x
8200 pF
2200 pF
+VA
(+15 V)
L Ch
Output
-VA
(-15 V)
0.1 mF
0.1 mF
680 W
620 W
IOUTLOPA165x
330 W
2700 pF
-VA
(-15 V)
0.1 mF
Figure 41. Audio DAC I/V Converter and Output Filter
16
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA1652 OPA1654
PACKAGE OPTION ADDENDUM
www.ti.com
28-Mar-2012
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
OPA1652AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
OPA1652AIDGK
ACTIVE
MSOP
DGK
8
80
Green (RoHS
& no Sb/Br)
CU NIPDAUAGLevel-1-260C-UNLIM
OPA1652AIDGKR
ACTIVE
MSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAGLevel-1-260C-UNLIM
OPA1652AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA1654AID
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA1654AIDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA1654AIPW
ACTIVE
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA1654AIPWR
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Samples
(Requires Login)
CU NIPDAU Level-2-260C-1 YEAR
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
28-Mar-2012
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Apr-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
OPA1652AIDGKR
MSOP
DGK
OPA1652AIDR
SOIC
OPA1654AIDR
SOIC
OPA1654AIPWR
TSSOP
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
D
14
2500
330.0
16.4
6.5
9.0
2.1
8.0
16.0
Q1
PW
14
2000
330.0
12.4
6.9
5.6
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Apr-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA1652AIDGKR
MSOP
DGK
8
2500
364.0
364.0
27.0
OPA1652AIDR
SOIC
D
8
2500
346.0
346.0
29.0
OPA1654AIDR
SOIC
D
14
2500
346.0
346.0
33.0
OPA1654AIPWR
TSSOP
PW
14
2000
346.0
346.0
29.0
Pack Materials-Page 2
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