Transistors SMD Type PNP Transistors FZT1151A (KZT1151A) Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 ■ Features 7.0±0.3 ● Collector Current Capability IC=-3A ● Collector Emitter Voltage VCEO=-40V 3.50±0.2 4 ● Low Saturation voltage 1 2 3 0.250 2.30 (typ) 1.80 (max) Gauge Plane 0.02 ~ 0.1 1.Base 2.Collector 0.70±0.1 4.60 (typ) 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -45 Collector - Emitter Voltage VCEO -40 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -3 Collector Current - Pulse ICP -5 Base Current IB -500 mA Collector Power Dissipation PC 2.5 W Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V A ℃ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors FZT1151A (KZT1151A) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Collector- base breakdown voltage Test Conditions VCBO Ic= -100 μA， IE=0 Min Typ Max -45 Collector- emitter breakdown voltage VCES Ic= -100 uA， IB=0 -45 Collector- emitter breakdown voltage VCEO Ic= -10 mA， IB=0 -40 Collector- emitter breakdown voltage VCEV IC=-100 u A, VEB=1V -40 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -36 V , IE=0 -100 Collector-emitter cut-off current ICES VCE= -32 V , IB=0 -100 Emitter cut-off current IEBO VCE(sat) (Note.1) -180 IC=-1 A, IB= -20mA (Note.1) -220 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-250mA Base-Emitter Turn-On Voltage VBE(on) VCE= -2V, IC= -3A Switching Times Collector output capacitance Transition frequency -90 IC=-0.5 A, IB=-3mA IC=-3 A, IB=-250mA (Note.1) nA -100 (Note.1) IC=-1.8 A, IB= -70mA DC current gain V VEB= -4V , IC=0 IC=-100mA, IB=-10mA Collector-emitter saturation voltage Unit (Note.1) mV -260 (Note.1) -300 (Note.1) -1.1 (Note.1) -1 V hFE(1) VCE= -2V, IC= -10mA 270 hFE(2) VCE= -2V, IC= -500mA 250 hFE(3) VCE= -2V, IC= -2 A 180 hFE(4) VCE= -2V, IC= -3 A 100 hFE(5) VCE= -2V, IC= -5 A 45 ton IC=-2A, IB=-20mA,VCC=-30V 170 toff IC=-2A, IB=±20mA,VCC=-30V 460 Cob VCB= -10V, f=1MHz 40 pF VCE= -10V, IC= -50mA,f=50MHz 145 MHz fT 800 ns Note.1: Pulse width=300us. Duty cycle ≤ 2% ■ Typical Characterisitics 50 D=t1 tP t1 40 tP 30 20 D=0.5 D=0.2 D=0.1 10 D=0.05 Single Pulse 0 100µs 1ms 10ms 100ms 1s Pulse Width 10s 100s Transient Thermal Resistance 2 www.kexin.com.cn Max Power Dissipation - (Watts) Thermal Resistance (°C/W) 4 D = 1 3 2 1 0 0 20 40 60 80 100 120 140 T - Ambient Temperature (°C) Derating curve 160 Transistors SMD Type PNP Transistors FZT1151A (KZT1151A) ■ Typical Characterisitics 1.0 1.0 +25°C IC/IB=100 0.8 0.6 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.4 VCE(sat) - (V) VCE(sat) - (V) 0.8 0.2 0.6 -55°C +25°C +100°C 0.4 0.2 0 0 1m 10m 100m 1 10 1m IC - Collector Current (A) V CE(sat) v I C 10m 100m 10 1 IC - Collector Current (A) V CE(sat) v I C 750 1.4 VCE=2V IC/IB=100 1.0 500 VBE(sat) - (V) h FE - Typical Gain 1.2 250 +100°C +25°C -55°C 0.8 0.6 0.2 0 0 1m 10m 100m 1 10 1m IC - Collector Current (A) h FE v I C VBE(on) - (V) 1 100m 10 10 VCE=2V 0.9 0.6 -55°C +25°C +100°C 0.3 1m 1 0m IC - Collector Current (A) V BE(sat) v I C 1 0m 100m 1 IC - Collector Current (A) V BE(on) v I C 10 IC - Collector Current (A) 1.2 0 -55°C +25°C +100°C 0.4 1 DC 1s 100ms 10ms 1ms 100us 100m 10m 1 0 0m 1 10 1 00 VCE - Collector Emitter Voltage (V) Safe Operating Area www.kexin.com.cn 3