ON MRS1504T3G Surface mount standard recovery power rectifier Datasheet

MRS1504T3G,
NRVS1504T3G
Surface Mount Standard
Recovery Power Rectifier
SMB Power Surface Mount Package
Features mesa epitaxial construction with glass passivation. Ideally
suited for high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
•
•
•
•
•
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STANDARD RECOVERY
RECTIFIER
1.5 AMPERES, 400 VOLTS
Compact Package with J−Bend Leads Ideal for Automated Handling
Stable, High Temperature, Glass Passivated Junction
AEC−Q101 Qualified and PPAP Capable
NRVS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb-Free*
SMB
CASE 403A
PLASTIC
Mechanical Characteristics:
•
•
•
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 95 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Maximum Temperature of 260°C / 10 Seconds for Soldering
Polarity: Notch and/or Band in Plastic Body Indicates Cathode Lead
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3A
MARKING DIAGRAM
AYWW
RGG G
G
A
Y
WW
RGG
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MRS1504T3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
NRVS1504T3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 6
1
Publication Order Number:
MRS1504T3/D
MRS1504T3G, NRVS1504T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
Value
Unit
VRRM
VRWM
VR
400
V
Average Rectified Forward Current
(At Rated VR, TI = 118°C)
IO
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TI = 118°C)
IFRM
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM
Storage/Operating Case Temperature Range
A
1.5
A
3.0
A
50
Tstg, TC
−55 to 150
°C
TJ
−55 to 150
°C
Operating Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 1)
Rating
Rtjl
18
°C/W
Thermal Resistance, Junction−to−Ambient (on 1″ sq. Cu. PCB pattern)
Rtja
79
°C/W
1. Minimum pad size.
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 2), see Figure 2
(IF = 1.5 A)
(IF = 2.25 A)
VF
Maximum Instantaneous Reverse Current, see Figure 4
(VR = 400 V)
(VR = 200 V)
IR
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%
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2
TJ = 25_C
TJ = 100_C
1.04
1.10
0.96
1.02
1.0
0.5
340
180
Unit
V
mA
MRS1504T3G, NRVS1504T3G
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
100
10
TJ = 100°C
TJ = 150°C
1.0
TJ = 25°C
TJ = -40°C
0.1
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1.6
100
10
TJ = 100°C
1.0
TJ = 25°C
0.1
0.6
0.8
1.0
1.2
1.4
1.6
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
I R, MAXIMUM REVERSE CURRENT (AMPS)
I R, REVERSE CURRENT (AMPS)
100E-6
10E-6
TJ = 150°C
TJ = 100°C
10E-3
TJ = 150°C
1.0E-3
TJ = 100°C
100E-6
1.0E-6
100E-9
TJ = 25°C
10E-9
TJ = 150°C
10E-6
1.0E-6
TJ = 25°C
100E-9
1.0E-9
0
10E-9
400
100
200
300
VR, REVERSE VOLTAGE (VOLTS)
0
2.5
dc
FREQ = 20 kHz
2.0
SQUARE WAVE
1.5
Ipk/Io = p
Ipk/Io = 5
1.0
Ipk/Io = 10
Ipk/Io = 20
0.5
0
0
20
40
60
80
100
120
TL, LEAD TEMPERATURE (°C)
140
400
Figure 4. Maximum Reverse Current
PFO , AVERAGE POWER DISSIPATION (WATTS)
I O , AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Reverse Current
100
200
300
VR, REVERSE VOLTAGE (VOLTS)
160
2.5
dc
2.0
SQUARE WAVE
Ipk/Io = p
Ipk/Io = 5
1.5
Ipk/Io = 10
1.0
Ipk/Io = 20
0.5
0
0
Figure 5. Current Derating
0.5
1.0
1.5
2.0
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
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3
2.5
MRS1504T3G, NRVS1504T3G
100
C, CAPACITANCE (pF)
TJ = 25°C
10
1.0
0
10
20
30
40
50
60
VR, REVERSE VOLTAGE (VOLTS)
70
80
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED
Figure 7. Capacitance
1.0
50%
20%
10%
0.1
5.0%
2.0%
0.01
1.0%
Rtjl(t) = Rtjl*r(t)
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
T, TIME (s)
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 8. Thermal Response, Junction−to−Lead
1.0
50%
20%
0.1
10%
5.0%
2.0%
0.01
1.0%
Rtjl(t) = Rtjl*r(t)
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
T, TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient
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4
10
100
1,000
MRS1504T3G, NRVS1504T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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