ISC BDX78 Silicon pnp power transistor Datasheet

Inchange Semiconductor
Product Specification
BDX78
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type BDX77
APPLICATIONS
·Medium power switching
·Amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-8
A
ICM
Collector current-Peak tp=10ms
-12
A
IB
Base current
-3
A
60
W
Ptot
Total power dissipation
Tmb=25℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
70
K/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance from junction to ambient
Inchange Semiconductor
Product Specification
BDX78
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-0.2A; IB=0
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
VCEsat-1
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-6A; IB=-0.6A
-1.5
V
Base-emitter saturation voltage
IC=-6A; IB=-0.6A
-2.0
V
VBE
Base-emitter on voltage
IC=-3A ; VCE=-2V
-1.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-0.1
mA
ICEO
Collector cut-off current
VCE=-30V; IB=0
-0.2
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.5
mA
fT
Transition frequency
IC=-0.3A ; VCE=-3V
7
DC current gain
IC=-1A ; VCE=-2V
30
VBEsat
hFE
CONDITIONS
MIN
TYP.
MAX
UNIT
MHz
Switching times
ton
Turn-on time
toff
Turn-off time
1.0
μs
2.0
μs
IC=2A IB1=-IB2=0.2A
2
Inchange Semiconductor
Product Specification
BDX78
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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