PD - 94678 HEXFET® POWER MOSFET SURFACE MOUNT (LCC-18) IRF7E3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7E3704 20V RDS(on) 0.05Ω ID 12A* LCC-18 ® Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Surface Mount Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 12* 10 48 20 0.16 ±20 120 12 2.0 1.0 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 (for 5s) 0.42 (Typical) g * Current is limited by package For footnotes refer to the last page www.irf.com 1 07/02/03 IRF7E3704 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units 20 — — V — 0.023 — V/°C — — 1.0 14 — — — — — — — — 0.05 0.055 3.0 — 20 100 Ω V S( ) µA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.1 100 -100 22 10 6.0 16 100 26 12 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1850 1005 63 — — — pF RG Gate Resistance — 2.6 — Ω nA nC ns nH Test Conditions V GS = 0V, ID = 250µA Ω Parameter BVDSS Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 10A ➃ VGS = 4.5V, ID = 10A VDS = VGS, ID = 250µA VDS = 10V, IDS = 10A ➃ VDS = 20V ,VGS=0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 4.5V, ID = 12A VDS = 10V VDD = 10V, ID = 12A, VGS = 4.5V, RG = 1.8Ω Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 10V f = 1.0MHz f = 1.6MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton Min Typ Max Units Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — — — — — — — 12* 48 1.4 50 60 Test Conditions A V ns nC Tj = 25°C, IS = 12A, VGS = 0V ➃ Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs VDD ≤ 16V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 6.25 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com IRF7E3704 100 VGS TOP 10V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 3.5V 10 40µs PULSE WIDTH Tj = 25°C VGS 10V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 3.5V 10 40µs PULSE WIDTH Tj = 150°C 1 1 0.1 1 10 0.1 100 100 T J = 25°C T J = 150°C VDS = 15V 15 40µs PULSE WIDTH 4 4.5 5 5.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) ID , Drain-to-Source Current ( Α) 2.0 3.5 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 10 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) ID = 12A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7E3704 VGS = Ciss = Crss = Coss = C, Capacitance (pF) 2400 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd Ciss 2000 C oss 1600 1200 800 400 12 VGS , Gate-to-Source Voltage (V) 2800 ID = 12A 10 1 10 6 4 2 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 10 VDS , Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) ISD , Reverse Drain Current ( Α) 100 T J = 150°C T J = 25°C 1 VGS = 0V 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 0.1 20 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 VDS = 16V VDS = 10V 8 C rss 0 100µs 10 1 2.2 OPERATION IN THIS AREA LIMITED BY RDS(on) 1ms 10ms Tc = 25°C Tj = 150°C Single Pulse 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7E3704 16 RD VDS LIMITED BY PACKAGE I D , Drain Current (A) VGS D.U.T. RG 12 + -VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7E3704 1 5V L VDS D .U .T. RG IA S 2V 0 GS V D R IV E R + - VD D 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 300 TOP 240 BOTTOM 180 120 60 0 25 V (B R )D SS ID 5.4A 7.6A 12A 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 4.5V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF7E3704 Footnotes: ➀ Repetitive Rating; Pulse width limited by ➂ ISD ≤ 12A, di/dt ≤ 100A/µs, maximum junction temperature. ➁ VDD = 15V, starting TJ = 25°C, L = 1.7mH Peak IAS = 12A, VGS =10V, RG = 25Ω ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 20V, TJ ≤ 150°C Case Outline and Dimensions — LCC-18 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/03 www.irf.com 7